onsemi-TIP105TU

December 2014  

TIP105 / TIP107  

PNP Epitaxial Silicon Darlington Transistor  

Equivalent Circuit  

Features  

C

• Monolithic

 

Construction with Built-in Base-Emitter  

Shunt Resistors  

B

• High

 

DC Current Gain:  

h

FE

= 1000 @ V

CE

= -4

V

, I

C

= -3 A (Minimum)  

• Collector-Emitter

 

Sustaining Voltage  

TO-220  

1

• Low

 

Collector-Emitter Saturation Voltage  

R1  

R2  

1.Base 2.Collector 3.Emitter  

• Industrial

 

Use  

E

R 1

≅

1

0 k

Ω  

R 2

≅

0

.

6 k

Ω  

• Complementary

 

to TIP102  

Ordering Information  

Part Number  

TIP105  

Top Mark  

TIP105  

Package  

Packing Method  

TO-220 3L (Single Gauge)  

TO-220 3L (Single Gauge)  

TO-220 3L (Single Gauge)  

TO-220 3L (Single Gauge)  

Bulk  

Rail  

Bulk  

Rail  

TIP105TU  

TIP107  

TIP105  

TIP107  

TIP107TU  

TIP107  

Absolute Maximum Ratings  

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  

absolute maximum ratings are stress ratings only. Values are at T

C

= 25°C unless otherwise noted.  

Symbol  

Parameter  

Value  

-60  

Unit  

TIP105  

TIP107  

TIP105  

TIP107  

V

CBO  

Collector-Base Voltage  

Collector-Emitter Voltage  

V

-100  

-60  

V

CEO  

V

-100  

-5  

V

EBO  

I

C  

I

CP  

I

B  

Emitter-Base Voltage  

Collector Current (DC)  

Collector Current (Pulse)  

Base Current (DC)  

V

A

-8  

-15  

A

-1  

A

T

J  

Junction

T

e

mperature  

150  

°

C  

°

C  

T

STG  

Storage

T

e

mperature Range  

-65 to 150  

© 2001 Fairchild Semiconductor Corporation  

TIP105 / TIP107 Rev. 1.1.0  

Thermal Characteristics  

Values are at T

C

= 25°C unless otherwise noted.  

Symbol  

Parameter  

Value  

Unit  

Collector Dissipation (T

A

= 25

°

C)  

Collector Dissipation (T

C

= 25

°

C)  

2

P

C  

W

80  

Electrical Characteristics

(1)  

Values are at T

C

= 25°C unless otherwise noted.  

Symbol  

Parameter  

Conditions  

I

C

= -30 mA, I

B

= 0  

V

CE

= -30

V

, I

B

= 0  

Min.  

-60  

Max.  

Unit  

TIP105  

TIP107  

TIP105  

TIP107  

TIP105  

TIP107  

Collector-Emitter Sustaining  

Voltage  

V

CEO

(sus)  

V

-100  

-50  

-50  

-50  

-50  

-2  

I

CEO  

Collector Cut-Off Current  

μ

A  

V

V

CB

= -60

V

, I

E

= 0  

I

CBO  

I

EBO  

h

FE  

Collector Cut-Off Current  

Emitter Cut-Off Current  

DC Current Gain  

μ

A  

V

V

EB

= -5 V, I

C

= 0  

mA  

V

CE

= -4 V, I

C

= -3 A  

V

CE

= -4 V, I

C

= -8 A  

I

C

= -3 A, I

B

= -6 mA  

I

C

= -8 A, I

B

= -80 mA  

V

CE

= -4 V, I

C

= -8 A  

1000  

200  

20000  

-2.0  

-2.5  

-2.8  

Collector-Emitter Saturation  

Voltage  

V

CE

(sat)  

V

V

BE

(on)  

C

ob  

Base-Emitter On Voltage  

Output Capacitance  

V

V

CB

= -10

V

, I

E

= 0,  

f = 0.1 MHz  

300  

pF  

Note:  

1. Pulse test: pw

≤

300

μ

s, duty cycle

≤

2%.  

© 2001 Fairchild Semiconductor Corporation  

TIP105 / TIP107 Rev. 1.1.0  

2

Typical Performance Characteristics  

10k  

-5  

I

B

= -1000

μ

A  

I

B

= -800

μ

A  

V

CE

= -4V  

I

B

= -700

μ

A  

I

B

= -900

μ

A  

-4  

-3  

-2  

-1  

-0  

I

B

= -600

μ

A  

I

B

= -500

μ

A  

I

B

= -400

μ

A  

1k  

I

B

= -300

μ

A  

I

B

= -200

μ

A  

100  

-0.1  

-1  

-10  

-0  

-1  

-2  

-3  

-4  

-5  

Ic[A], COLLECTOR CURRENT  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

Figure 1. Static Characteristic  

Figure 2. DC Current Gain  

-100k  

-10k  

-1k  

10k  

1k  

100  

10  

1

I

C

= 500 I

B  

f = 0.1 MHz  

I

V

BE

(sat)  

V

CE

(sat)  

-100  

-0.1  

-1  

-10  

-100  

-0.1  

-1  

-10  

-100  

V

CB

[V], COLLECTOR-BASE VOLTAGE  

I

C

[A], COLLECTOR CURRENT  

Figure 3. Collector-Emitter Saturation Voltage and  

Base-Emitter Saturation Voltage  

Figure 4. Collector Output Capacitance  

-100  

100  

90  

80  

70  

60  

50  

40  

30  

20  

10  

0

1ms  

-10  

-1  

-0.1  

TIP105  

TIP106  

TIP107  

-0.01  

-0.1  

-1  

-10  

-100  

0

25  

50  

75  

100  

125  

150  

175  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

T

C

[

o

C], CASE TEMPERATURE  

Figure 5. Safe Operating Area  

Figure 6. Power Derating  

© 2001 Fairchild Semiconductor Corporation  

TIP105 / TIP107 Rev. 1.1.0  

3

Physical Dimensions  

Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB  

© 2001 Fairchild Semiconductor Corporation  

TIP105 / TIP107 Rev. 1.1.0  

4

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2. A

 

critical component in any component of a life support, device, or  

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Definition of Terms  

Datasheet Identification  

Product Status  

Definition  

Datasheet contains the design specifications for product development. Specifications may change  

in any manner without notice.  

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Formative / In Design  

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild  

Semiconductor reserves the right to make changes at any time without notice to improve design.  

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make  

changes at any time without notice to improve the design.  

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Preliminary  

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Obsolete  

First Production  

Full Production  

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Rev. I72  

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