onsemi-TIP117G
| Part # | onsemi-TIP117G |
Download  | onsemi-TIP117G |
TIP110, TIP111, TIP112
(NPN); TIP115, TIP116,
TIP117 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
DARLINGTON
2 AMPERE
Designed for general
−
purpose amplifier and low
−
speed switching
applications.
COMPLEMENTARY SILICON
POWER TRANSISTORS
60
−
80
−
100 VOLTS, 50 WATTS
Features
•
High DC Current Gain
−
h
FE
= 2500 (Typ) @ I
= 1.0 Adc
C
•
Collector
−
Emitter Sustaining
V
o
ltage
−
@ 30 mAdc
MARKING
DIAGRAM
V
= 60 Vdc (Min)
−
TIP110, TIP115
= 80 Vdc (Min)
−
TIP111, TIP116
= 100 Vdc (Min)
−
TIP112, TIP117
CEO(sus)
4
•
Low Collector
−
Emitter Saturation
V
o
ltage
−
TO
−
220AB
CASE 221A
STYLE 1
V
CE(sat)
= 2.5 Vdc (Max) @ I
= 2.0 Adc
C
TIP11xG
AYWW
•
Monolithic Construction with Built
−
in Base
−
Emitter Shunt Resistors
•
Pb
−
Free Packages are Available*
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
1
2
3. EMITTER
4. COLLECTOR
3
TIP11x =
Device Code
x
= 0, 1, 2, 5, 6, or 7
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb
−
Free Package
ORDERING INFORMATION
this data sheet.
*For additional information on our Pb
−
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014
−
Rev. 8
TIP110/D
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
MAXIMUM RATINGS
TIP110,
TIP115
TIP111,
TIP116
TIP112,
TIP117
Rating
Symbol
Unit
Vdc
Vdc
Vdc
Adc
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
V
CEO
60
60
80
80
100
100
V
CB
EB
V
5.0
Collector Current
−
Continuous
−
Peak
I
C
2.0
4.0
Base Current
I
B
50
mAdc
T
o
tal Power Dissipation @ T
= 25
°
C
Derate above 25
°
C
P
D
50
0.4
W
W/
°
C
C
T
o
tal Power Dissipation @ T
= 25
°
C
Derate above 25
°
C
P
D
2.0
0.016
W
W/
°
C
A
Unclamped Inductive Load Energy
−
Figure 13
Operating and Storage Junction
E
25
mJ
T , T
–
ꢀ
65 to +
ꢀ
150
°
C
J
stg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction
−
to
−
Case
R
2.5
°
C/W
q
JC
Thermal Resistance, Junction
−
to
−
Ambient
R
62.5
°
C/W
q
JA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(I =
30 mAdc, I
= 0)
V
Vdc
CEO(sus)
TIP110, TIP115
TIP111, TIP116
TIP112, TIP117
C
B
60
80
100
−
−
−
Collector Cutoff Current
(V =
30 Vdc, I
= 0)
I
I
mAdc
mAdc
CEO
TIP110, TIP115
TIP111, TIP116
TIP112 ,TIP117
CE
B
−
−
−
2.0
2.0
2.0
(V =
40 Vdc, I
= 0)
CE
B
(V =
50 Vdc, I
= 0)
CE
B
Collector Cutoff Current
(V =
60 Vdc, I
= 0)
CBO
TIP110, TIP115
TIP111, TIP116
TIP112, TIP117
CB
E
−
−
−
1.0
1.0
1.0
(V =
80 Vdc, I
= 0)
CB
E
(V =
100 Vdc, I
= 0)
CB
E
Emitter Cutoff Current
(V =
5.0 Vdc, I
= 0)
I
−
2.0
mAdc
EBO
BE
C
DC Current Gain
h
FE
−
(I =
1.0 Adc, V
= 4.0 Vdc)
C
CE
1000
500
−
−
(I =
2.0 Adc, V
= 4.0 Vdc)
C
CE
Collector
−
Emitter Saturation Voltage (I
= 2.0 Adc, I
= 8.0 mAdc)
V
CE(sat)
−
−
2.5
2.8
Vdc
Vdc
C
B
Base
−
Emitter On Voltage (I
= 2.0 Adc, V
= 4.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Small
−
Signal Current Gain (I
= 0.75 Adc, V
= 10 Vdc, f = 1.0 MHz)
h
fe
25
−
−
C
CE
Output Capacitance
(V =
10 Vdc, I
= 0, f = 0.1 MHz)
C
pF
ob
TIP115, TIP116, TIP117
TIP110, TIP111, TIP112
CB
E
−
−
200
100
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2%.
2
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
COLLECTOR
COLLECTOR
BASE
BASE
≈
8.0 k
≈
120
≈
8.0 k
≈
120
EMITTER
EMITTER
Figure 1. Darlington Circuit Schematic
ORDERING INFORMATION
Device
Package
Shipping
TIP110
TO
−
220
50 Units / Rail
50 Units / Rail
TIP110G
TO
−
220
(Pb
−
Free)
TIP111
TO
−
220
50 Units / Rail
50 Units / Rail
TIP111G
TO
−
220
(Pb
−
Free)
TIP112
TO
−
220
50 Units / Rail
50 Units / Rail
TIP112G
TO
−
220
(Pb
−
Free)
TIP115
TO
−
220
50 Units / Rail
50 Units / Rail
TIP115G
TO
−
220
(Pb
−
Free)
TIP116
TO
−
220
50 Units / Rail
50 Units / Rail
TIP116G
TO
−
220
(Pb
−
Free)
TIP117
TO
−
220
50 Units / Rail
50 Units / Rail
TIP117G
TO
−
220
(Pb
−
Free)
T
A
T
C
3.0 60
2.0 40
1.0 20
T
C
T
A
0
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (
°
C)
Figure 2. Power Derating
3
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
4.0
V
CC
-ꢀ30 V
V
= 30 V
I
= I
CC
B1 B2
R
& R
VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
D ,
MUST BE FAST RECOVERY TYPE, eg:
B
t
s
I /I
= 250
T =
25
°
C
C B
J
1
2.0
ꢁ1N5825 USED ABOVE I
≈
100 mA
B
R
C
SCOPE
ꢁMSD6100 USED BELOW I
≈
100 mA
B
TUT
V
2
R
t
f
B
approx
+ꢀ8.0 V
1.0
0.8
D
1
t
r
≈
8.0 k
51
≈
60
0
0.6
V
1
+ꢀ4.0 V
approx
-12 V
0.4
25
m
s
t @
V =
0
d BE(off)
for t
and t , D
is disconnected
d
r
1
PNP
NPN
and V
= 0, R
and R
are varied
to obtain desired test currents.
2
B
C
t , t
≤
10 ns
r
f
DUTY CYCLE = 1.0%
0.2
0.04 0.06
For NPN test circuit, reverse diode,
polarities and input pulses.
0.1
0.2
0.4 0.6
1.0
2.0
4.0
I ,
COLLECTOR CURRENT (AMP)
C
Figure 3. Switching Times Test Circuit
Figure 4. Switching Times
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
0.1
P
(pk)
Z
= r(t) R
q
JC
q
JC(t)
0.07
0.05
R
= 2.5
°
C/W MAX
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
t
1
0.03
0.02
1
t
2
T
– T
= P
C
Z
q
(pk) JC(t)
0.01
J(pk)
DUTY CYCLE, D = t
/t
1 2
SINGLE PULSE
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500 1.0
k
t, TIME (ms)
Figure 5. Thermal Response
4
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
ACTIVE
−
REGION SAFE
−
OPERATING AREA
10
10
4.0
2.0
4.0
1ꢂms
5ꢂms
dc
2.0
1.0
T =
150
°
C
BONDING WIRE LIMITED
THERMALLY LIMITED
J
T =
150
°
C
J
dc
1.0
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
= 25
°
C (SINGLE PULSE)
SECONDARY BREAKDOWN LIMITED
C
@ T
= 25
°
C (SINGLE PULSE)
C
SECONDARY BREAKDOWN LIMITED
TIP115
TIP116
TIP117
TIP110
TIP111
TIP112
CURVES APPLY BELOW
RATED V
CURVES APPLY BELOW
RATED V
CEO
CEO
0.1
1.0
0.1
1.0
10
40 60
80 100
10
60 80
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. TIP115, 116, 117
Figure 7. TIP110, 111, 112
200
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
T
= 25
°
C
C
breakdown. Safe operating area curves indicate I
−
V
C
CE
100
70
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
50
T is
variable depending on conditions. Second breakdown
C
= 150
°
C;
J(pk)
C
ob
30
20
C
pulse limits are valid for duty cycles to 10% provided T
ib
J(pk)
< 150
°
C. T
J(pk)
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
PNP
NPN
10
0.04 0.06 0.1
0.2
0.4 0.6
1.0
2.0 4.0
6.0 10
20
40
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 8. Capacitance
5
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
NPN
PNP
TIP110, 111, 112
TIP115, 116, 117
6.0 k
6.0 k
V
CE
= 3.0 V
T =
125
°
C
J
V
CE
= 3.0 V
T =
125
°
C
J
4.0 k
3.0 k
4.0 k
3.0 k
25
°
C
25
°
C
2.0 k
2.0 k
-ꢀ55
°
C
-ꢀ55
°
C
1.0 k
800
1.0 k
800
600
600
400
300
0.04 0.06
400
300
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.1
0.2
0.4 0.6
1.0
2.0
4.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 9. DC Current Gain
3.4
3.0
2.6
2.2
1.8
3.4
T =
25
°
C
J
T =
25
°
C
J
I
=
0.5 A
C
3.0
I
=
0.5 A
C
1.0 A
4.0 A
2.0 A
2.6
2.2
1.8
1.4
1.0 A
2.0 A
4.0 A
1.4
1.0
0.6
1.0
0.6
0.1 0.2
0.5
1.0 2.0
5.0 10
20
50
100
0.1
0.2
0.5 1.0 2.0
5.0 10
20
50
100
I ,
BASE CURRENT (mA)
B
I ,
BASE CURRENT (mA)
B
Figure 10. Collector Saturation Region
2.2
2.2
T =
25
°
C
J
T =
25
°
C
J
1.8
1.4
1.0
0.6
0.2
1.8
V
@ I
/I =
250
C B
BE(sat)
V
@ I
/I =
250
C B
BE(sat)
1.4
1.0
0.6
0.2
V
@ V
= 3.0 V
CE
BE
V
BE
@ V
= 3.0 V
CE
V
@ I
/I =
250
C B
V
@ I
/I =
250
CE(sat)
CE(sat) C
B
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 11. “On” Voltages
6
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
NPN
PNP
TIP110, 111, 112
TIP115, 116, 117
+ꢀ0.8
0
+ꢀ0.8
0
*APPLIES FOR I
/I
≤
h /3
*APPLIES FOR I
/I
≤
h /3
C B
FE
C B
FE
-ꢀ0.8
-ꢀ1.6
-ꢀ2.4
-ꢀ3.2
-ꢀ0.8
-ꢀ1.6
-ꢀ2.4
-ꢀ3.2
25
°
C to 150
°
C
-ꢀ55
°
C to 25
°
C
25
°
C to 150
°
C
*ꢀ
q
for V
VC
CE(sat)
*ꢀ
q
for V
VC
CE(sat)
-ꢀ55
°
C to 25
°
C
25
°
C to 150
°
C
25
°
C to 150
°
C
-ꢀ55
°
C to 25
°
C
q
for V
BE
VC
q
for V
BE
VC
-ꢀ55
°
C to 25
°
C
-ꢀ4.0
-ꢀ4.8
-ꢀ4.0
-ꢀ4.8
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 12. Temperature Coefficients
5
5
10
10
REVERSE
FORWARD
REVERSE
FORWARD
4
3
2
4
10
10
3
10
10
10
V
CE
= 30 V
V
CE
= 30 V
2
1
0
10
10
10
T =
150
°
C
J
T =
150
°
C
J
1
10
10
100
°
C
0
100
°
C
25
°
C
25
°
C
-ꢀ0.6 -ꢀ0.4 -ꢀ0.2
-1
-1
10
10
-ꢀ0.6 -ꢀ0.4 -ꢀ0.2
0
+ꢀ0.2 +ꢀ0.4 +ꢀ0.6 +ꢀ0.8 +ꢀ1.0 +ꢀ1.2 +ꢀ1.4
0
+ꢀ0.2 +ꢀ0.4
+ꢀ0.6 +ꢀ0.8 +ꢀ1.0 +ꢀ1.2
+ꢀ1.4
V ,
BASE‐EMITTER VOLTAGE (VOLTS)
BE
V
BE
, BASE‐EMITTER VOLTAGE (VOLTS)
Figure 13. Collector Cut-Off Region
VOLTAGE AND CURRENT WAVEFORMS
TEST CIRCUIT
t
w
≈
3.5 ms (SEE NOTE A)
V
CE
MONITOR
0 V
INPUT
VOLTAGE
MJE254
-ꢀ5 V
100 mH
R
BB1
INPUT
TUT
100 ms
+
–
2ꢂk
W
V
CC
= 20 V
0.71 A
COLLECTOR
CURRENT
50
W
I
R
BB2
100
W
C
MONITOR
50
W
0 V
R
=
0.1
W
+
–
S
V
CER
V
BB1
= 10 V
V
BB2
= 0
COLLECTOR
VOLTAGE
20 V
V
CE(sat)
Note A: Input pulse width is increased until I
NPN test shown; for PNP test
= 0.71 A,
CM
reverse all polarity and use MJE224 driver.
Figure 14. Inductive Load Switching
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
STYLE 2:
PIN 1.
BASE
2. EMITTER
STYLE 3:
PIN 1.
CATHODE
STYLE 4:
PIN 1.
MAIN TERMINAL 1
2. ANODE
3. GATE
2. MAIN
TERMINAL 2
3. GATE
3. EMITTER
3. COLLECTOR
4. EMITTER
4. COLLECTOR
4. ANODE
4. MAIN
TERMINAL 2
STYLE 5:
PIN 1.
GATE
STYLE 6:
PIN 1.
ANODE
STYLE 7:
STYLE 8:
PIN 1.
CATHODE
2. ANODE
PIN 1.
CATHODE
2. ANODE
2. DRAIN
3. SOURCE
4. DRAIN
2. CATHODE
3. ANODE
3. CATHODE
4. ANODE
3. EXTERNAL
TRIP/DELAY
4. ANODE
4. CATHODE
STYLE 9:
PIN 1.
GATE
STYLE 10:
PIN 1.
GATE
STYLE 11:
STYLE 12:
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
2. COLLECTOR
3. EMITTER
2. SOURCE
3. DRAIN
4. COLLECTOR
4. SOURCE
4. SOURCE
4. NOT
CONNECTED
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO
−
220
PAGE 1 OF 1
onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
