onsemi-TIP2955G
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TIP3055 (NPN),
TIP2955 (PNP)
Complementary Silicon
Power
T
r
ansistors
Designed for general
−
purpose switching and amplifier applications.
Features
•
DC Current Gain
−
15 AMPERE
h
FE
= 20
ꢀ
−
ꢀ
70 @ I
C
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 VOLTS, 90 WATTS
= 4.0 Adc
•
Collector
−
Emitter Saturation
V
o
ltage
−
V
CE(sat)
= 1.1 Vdc (Max) @ I
= 4.0 Adc
C
•
Excellent Safe Operating Area
•
These are Pb
−
Free Devices*
MAXIMUM RATINGS
Rating
Symbol
Value
60
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
SOT
−
93 (TO
−
218)
CASE 340D
STYLE 1
Collector
−
Emitter Voltage
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
Collector Current
−
Continuous
Base Current
V
CEO
CER
V
70
V
CB
100
7.0
1 5
V
EB
I
C
I
B
7.0
TO
−
247
CASE 340L
STYLE 3
T
o
tal Power Dissipation @ T
= 25
°
C
Derate above 25
°
C
P
D
90
0.72
W
W/
°
C
C
Operating and Storage Junction
T
e
mperature Range
T , T
–
ꢀ
65 to
+
ꢀ
150
°
C
J
stg
THERMAL CHARACTERISTICS
Characteristic
NOTE: Effective
June 2012 this device will
be available only in the TO
−
247
Symbol
Max
1.39
35.7
Unit
°
C/W
°
C/W
package. Reference FPCN# 16827.
Thermal Resistance, Junction
−
to
−
Case
Thermal Resistance, Junction
−
to
−
Ambient
R
q
JC
R
q
JA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
*For additional information on our Pb
−
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
May, 2012
−
Rev. 7
TIP3055/D
TIP3055 (NPN), TIP2955 (PNP)
MARKING DIAGRAMS
TO
−
247
TO
−
218
TIPxx55
AYWWG
AYWWG
TIPxx55
1 BASE
3 EMITTER
1 BASE
3 EMITTER
2 COLLECTOR
2 COLLECTOR
TIPxx55
A
Y
= Device Code
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb
−
Free Package
ORDERING INFORMATION
Device
Package
Shipping
TIP3055G
SOT
−
93 (TO
−
218)
(Pb
−
Free)
30 Units / Rail
TIP2955G
TIP3055G
TIP2955G
SOT
−
93 (TO
−
218)
(Pb
−
Free)
30 Units / Rail
30 Units / Rail
30 Units / Rail
TO
−
247
(Pb
−
Free)
TO
−
247
(Pb
−
Free)
2
TIP3055 (NPN), TIP2955 (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(I =
30 mAdc, I
= 0)
V
60
−
−
Vdc
CEO(sus)
C
B
Collector Cutoff Current
(V =
70 Vdc, R
= 100
Ohms)
I
1.0
0.7
5.0
5.0
mAdc
mAdc
mAdc
mAdc
CER
CE
BE
Collector Cutoff Current
(V =
30 Vdc, I
= 0)
I
−
CEO
CE
B
Collector Cutoff Current
(V =
100 Vdc, V
I
−
CEV
= 1.5 Vdc)
BE(off)
CE
Emitter Cutoff Current
(V =
7.0 Vdc, I
= 0)
I
−
EBO
BE
C
DC Current Gain
h
FE
−
(I =
4.0 Adc, V
= 4.0 Vdc)
C
CE
20
5.0
70
−
(I =
10 Adc, V
= 4.0 Vdc)
C
CE
Collector
−
Emitter Saturation Voltage
(I =
4.0 Adc, I
= 400 mAdc)
V
Vdc
Vdc
CE(sat)
C
B
−
−
1.1
3.0
(I =
10 Adc, I
= 3.3 Adc)
C
B
Base
−
Emitter On Voltage
(I =
4.0 Adc, V
= 4.0 Vdc)
V
−
1.8
BE(on)
C
CE
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
I
s/b
3.0
−
Adc
(V =
30 Vdc, t = 1.0 s; Nonrepetitive)
CE
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
f
2.5
15
−
−
MHz
kHz
T
(I =
0.5 Adc, V
= 10 Vdc, f = 1.0 MHz)
C
CE
Small
−
Signal Current Gain
(V =
4.0 Vdc, I
= 1.0 Adc, f = 1.0 kHz)
h
fe
CE
C
NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055.
1. Pulse
T
e
st: Pulse Width = 300
m
s, Duty Cycle
v
2.0%.
3
TIP3055 (NPN), TIP2955 (PNP)
1000
V
= 4.0 V
CE
T =
25
°
C
J
100
TIP3055
TIP2955
10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I ,
COLLECTOR CURRENT (AMP)
C
Figure 1. DC Current Gain
100
50
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
30
20
breakdown. Safe operating area curves indicate I
−
V
C
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
300
m
s
1.0ꢁms
10
dc
5.0
10ꢁms
3.0
2.0
is
C
J(pk)
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated for temperature.
1.0
0.5
THERMAL LIMIT @ T
= 25
°
C
C
0.3
0.2
T =
150
°
C
J
0.1
1.0
2.0
4.0 6.0
10
20
40 60
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
93 (TO
−
218)
CASE 340D
−
02
ISSUE E
DATE 01/03/2002
NOTES:
SCALE 1:1
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETER.
C
E
Q
B
MILLIMETERS
INCHES
MIN
DIM MIN
MAX
20.35
15.20
MAX
0.801
0.598
0.193
0.051
0.054
0.219
0.118
0.031
A
B
C
D
E
G
H
J
—
14.70
4.70
1.10
1.17
5.40
2.00
0.50
—
0.579
U
4
4.90 0.185
1.30 0.043
1.37 0.046
5.55 0.213
3.00 0.079
0.78 0.020
A
L
S
1
2
3
K
K
L
31.00 REF
1.220 REF
—
4.00
16.20
4.10 0.158
18.20 0.701
—
0.638
0.161
0.717
Q
S
U
V
17.80
4.00 REF
1.75 REF
0.157 REF
0.069
J
H
D
MARKING DIAGRAM
V
G
STYLE 1:
PIN 1.
BASE
STYLE 2:
AYWW
xxxxx
PIN 1.
ANODE
2. CATHODE
3. ANODE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
4. CATHODE
A
Y
= Assembly Location
=
Y
e
ar
WW
= Work Week
xxxxx =
Device Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42643B
SOT
−
93
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
247
CASE 340L
ISSUE G
DATE 06 OCT 2021
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX =
Specific Device Code
STYLE 1:
PIN 1.
GATE
STYLE 2:
PIN 1.
ANODE
2. CATHODE
(S)
STYLE 3:
PIN 1.
BASE
2. COLLECTOR
STYLE 4:
PIN 1.
GATE
2. COLLECTOR
3. EMITTER
A
Y
= Assembly Location
=
Y
e
ar
2. DRAIN
3. SOURCE
4. DRAIN
3. ANODE
2
4. CATHODES
(S)
3. EMITTER
4. COLLECTOR
4. COLLECTOR
WW
G
= Work Week
= Pb
−
Free Package
STYLE 5:
STYLE 6:
PIN 1.
CATHODE
2. ANODE
3. GATE
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
4. ANODE
4. MAIN
TERMINAL 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB15080C
TO
−
247
PAGE 1 OF 1
onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2021
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
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and applications using
onsemi
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provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
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under any of its intellectual property rights nor the rights of others.
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
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−
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−
9855
T
o
ll Free USA/Canada
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