onsemi-TIP30CG
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TIP29, A, B, C (NPN),
TIP30, A, B, C (PNP)
Complementary Silicon
Plastic Power
T
r
ansistors
Designed for use in general purpose amplifier and switching
applications. Compact TO
−
220 package.
Features
1 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
40, 60, 80, 100 VOLTS,
80 WATTS
•
These Devices are Pb
−
Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector
−
Emitter Voltage
TIP29G, TIP30G
TIP29AG, TIP30AG
TIP29BG, TIP30BG
TIP29CG, TIP30CG
V
CEO
Vdc
40
60
80
100
PNP
NPN
COLLECTOR
2,4
COLLECTOR
2,4
Collector
−
Base Voltage
TIP29G, TIP30G
TIP29AG, TIP30AG
TIP29BG, TIP30BG
TIP29CG, TIP30CG
V
V
Vdc
CB
40
60
80
100
1
1
BASE
BASE
Emitter
−
Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak
Base Current
5.0
1.0
3.0
0.4
Vdc
Adc
Adc
Adc
EB
3
I
C
3
EMITTER
EMITTER
I
CM
I
B
T
o
tal Power Dissipation
P
D
D
@ T
= 25
°
C
30
W
4
C
Derate above 25
°
C
0.24
W/
°
C
TO
−
220
CASE 221A
STYLE 1
T
o
tal Power Dissipation
P
@ T
= 25
°
C
2.0
0.016
W
W/
°
C
A
Derate above 25
°
C
1
Unclamped Inductive Load Energy
E
32
mJ
2
3
Operating and Storage Junction
T
e
mperature Range
T , T
–
6
5 to
+
1
50
°
C
J
stg
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. This
rating based on testing with L
= 20 mH, R
= 100
W
, V
= 10
V
,
C
BE
CC
I
= 1.8 A,
P
.
R.F = 10 Hz
TIPxxxG
AYWW
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
62.5
Unit
°
C/W
°
C/W
Thermal Resistance, Junction
−
to
−
Ambient
Thermal Resistance, Junction
−
to
−
Case
R
q
JA
TIPxxx =
Device Code:
29, 29A, 29B, 29C
R
4.167
q
JC
30, 30A, 30B, 30C
= Assembly
Location
=
Y
e
ar
A
Y
WW
G
= Work
Week
= Pb
−
Free Package
*For additional information on our Pb
−
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014
−
Rev. 13
TIP29B/D
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector
−
Emitter Sustaining Voltage
V
Vdc
CEO(sus)
C
B
TIP29G, TIP30G
40
60
−
−
−
−
TIP29AG, TIP30AG
TIP29BG, TIP30BG
TIP29CG, TIP30CG
80
100
Collector Cutoff Current
I
mAdc
CEO
(V =
30 Vdc, I
= 0)
CE
B
TIP29G, TIP29AG, TIP30G, TIP30AG
(V =
60 Vdc, I
= 0)
−
−
0.3
0.3
CE
B
TIP29BG, TIP29CG, TIP30BG, TIP30CG
Collector Cutoff Current
I
m
Adc
CES
(V =
40 Vdc, V
= 0)
CE
EB
TIP29G, TIP30G
(V =
60 Vdc, V
= 0)
−
−
−
−
200
200
200
200
CE
EB
TIP29AG, TIP30AG
(V =
80 Vdc, V
= 0)
CE
EB
TIP29BG, TIP30BG
(V =
100 Vdc, V
= 0)
CE
EB
TIP29CG, TIP30CG
Emitter Cutoff Current
I
mAdc
EBO
(V =
5.0 Vdc, I
= 0)
−
1.0
BE
C
DC Current Gain
h
FE
−
(I =
0.2 Adc, V
= 4.0 Vdc)
40
15
−
75
C
CE
(I =
1.0 Adc, V
= 4.0 Vdc)
C
CE
Collector
−
Emitter Saturation Voltage
(I =
1.0 Adc, I
= 125 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
0.7
1.3
C
B
Base
−
Emitter On Voltage
(I =
1.0 Adc, V
= 4.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
f
MHz
T
(I =
200 mAdc, V
= 10 Vdc, f
= 1.0 MHz)
3.0
20
−
−
C
CE
test
Small
−
Signal Current Gain
(I =
0.2 Adc, V
= 10 Vdc, f = 1.0 kHz)
h
−
fe
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%
3. f =
⎪
h
⎪•
f
test
T
fe
2
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
3.0
2.0
500
300
I
= I
B1 B2
I /I
= 10
T =
150
°
C
V
CE
= 2.0 V
C
B
J
t
′
s
t
′
= t
– 1/8 t
f
s
s
1.0
0.7
0.5
T =
25
°
C
J
25
°
C
t @
V =
30 V
f CC
100
70
-ꢀ55
°
C
50
0.3
0.2
t @
V =
10 V
CC
f
30
10
0.1
0.07
0.05
7.0
5.0
0.03
0.03 0.05
0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
0.03 0.05
0.07 0.1
0.5 0.7 1.0
3.0
0.3
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 1. DC Current Gain
Figure 2. Turn
−
Off Time
TURN-ON PULSE
V
CC
2.0
1.0
APPROX
+11 V
R
C
I /I
= 10
B
C
T =
25
°
C
J
t @
V =
30 V
CC
SCOPE
r
V
0.7
0.5
in
V 0
in
R
B
V
EB(off)
t
1
0.3
t @
V =
10 V
CC
r
C
<< C
jd
eb
t
3
APPROX
+11 V
-ꢀ4.0 V
t
≤
7.0 ns
1
100 < t
< 500
m
s
0.1
0.07
0.05
t @
V
d
= 2.0 V
2
t <
15 ns
EB(off)
V
in
3
DUTY CYCLE
≈
2.0%
APPROX -ꢀ9.0 V
0.03
0.02
t
2
R and
R VARIED
TO OBTAIN
B
C
DESIRED CURRENT LEVELS.
TURN-OFF PULSE
0.03 0.05
0.07 0.1
0.3
0.5 0.7 1.0
3.0
I ,
COLLECTOR CURRENT (AMP)
C
Figure 3. Switching Time Equivalent Circuit
Figure 4. Turn
−
On Time
10
3.0
0.1
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
T =
150
°
C
J
breakdown. Safe operating area curves indicate I
−
V
C
CE
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
1 ms
= 150
°
C; T
is
dc
J(pk)
C
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
SECOND BREAKDOWN LIMITED
THERMALLY LIMITED @ T
= 25
°
C
BONDING WIRE LIMITED
J(pk)
5 ms
C
≤
150
°
C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
TIP29, 30
CURVES APPLY BELOW
RATED V
TIP29A, 30A
TIP29B, 30B
TIP29C, 30C
CEO
0.1
1.0
4.0
10
20
40
100
V
CE
, COLLECTOR-EMITTER VOLTAGE, (VOLTS)
Figure 5. Active Region Safe Operating Area
3
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
ORDERING INFORMATION
Device
Package
Shipping
TIP29G
TO
−
220
(Pb
−
Free)
50 Units / Rail
TIP29AG
TIP29BG
TIP29CG
TIP30G
TO
−
220
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
(Pb
−
Free)
TO
−
220
(Pb
−
Free)
TO
−
220
(Pb
−
Free)
TO
−
220
(Pb
−
Free)
TIP30AG
TIP30BG
TIP30CG
TO
−
220
(Pb
−
Free)
TO
−
220
(Pb
−
Free)
TO
−
220
(Pb
−
Free)
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
STYLE 2:
PIN 1.
BASE
2. EMITTER
STYLE 3:
PIN 1.
CATHODE
STYLE 4:
PIN 1.
MAIN TERMINAL 1
2. ANODE
3. GATE
2. MAIN
TERMINAL 2
3. GATE
3. EMITTER
3. COLLECTOR
4. EMITTER
4. COLLECTOR
4. ANODE
4. MAIN
TERMINAL 2
STYLE 5:
PIN 1.
GATE
STYLE 6:
PIN 1.
ANODE
STYLE 7:
STYLE 8:
PIN 1.
CATHODE
2. ANODE
PIN 1.
CATHODE
2. ANODE
2. DRAIN
3. SOURCE
4. DRAIN
2. CATHODE
3. ANODE
3. CATHODE
4. ANODE
3. EXTERNAL
TRIP/DELAY
4. ANODE
4. CATHODE
STYLE 9:
PIN 1.
GATE
STYLE 10:
PIN 1.
GATE
STYLE 11:
STYLE 12:
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
2. COLLECTOR
3. EMITTER
2. SOURCE
3. DRAIN
4. COLLECTOR
4. SOURCE
4. SOURCE
4. NOT
CONNECTED
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO
−
220
PAGE 1 OF 1
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Semiconductor Components Industries, LLC, 2019
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onsemi
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:
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o
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