onsemi-TIP31CG
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TIP31G, TIP31AG, TIP31BG,
TIP31CG (NPN),
TIP32G,ꢀTIP32AG, TIP32BG,
TIP32CGꢀ(PNP)
Complementary Silicon
Plastic Power
T
r
ansistors
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
40−60−80−100 VOLTS,
40 WATTS
Designed for use in general purpose amplifier and switching
applications.
Features
•
High Current Gain − Bandwidth Product
•
Compact TO−220 Package
•
These Devices are Pb−Free and are RoHS Compliant*
PNP
NPN
COLLECTOR
2,4
COLLECTOR
2,4
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
V
Vdc
CEO
40
60
80
1
1
BASE
BASE
100
3
3
Collector−Base Voltage
TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
V
Vdc
CB
EMITTER
EMITTER
40
60
80
4
100
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
V
5.0
3.0
5.0
1.0
Vdc
Adc
Adc
Adc
EB
TO−220
CASE 221A
STYLE 1
I
C
I
CM
I
B
1
2
3
T
o
tal Power Dissipation
P
D
@ T
= 25
°
C
C
40
0.32
W
W/
°
C
Derate above 25
°
C
MARKING DIAGRAM
T
o
tal Power Dissipation
P
D
@ T
= 25
°
C
A
2.0
0.016
W
W/
°
C
Derate above 25
°
C
Unclamped Inductive Load Energy
(Note 1)
E
32
mJ
TIP3xxG
AYWW
Operating and Storage Junction
T
e
m-
perature Range
T , T
–
6
5 to
+
1
50
°
C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. I
= 1.8 A, L = 20 mH,
P
.
R.
F
. =
1
0 Hz, V
= 10
V
, R
=
1
00
W
C
CC
BE
TIP3xx =
Device Code
THERMAL CHARACTERISTICS
Characteristic
xx
= 1, 1A, 1B, 1C,
2, 2A, 2B, 2C,
= Assembly Location
=
Y
e
ar
= Work Week
Pb−Free Package
Symbol
Max
62.5
Unit
°
C/W
°
C/W
A
Y
WW
G
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
R
q
JA
JC
R
3.125
q
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
September, 2015 − Rev. 16
TIP31A/D
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
CEO(sus)
(I =
30 mAdc, I
= 0)
TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
C
B
40
60
80
−
−
−
−
100
Collector Cutoff Current
I
mAdc
CEO
(V =
30 Vdc, I
= 0)
CE
B
TIP31G, TIP32G, TIP31AG, TIP32AG
(V =
60 Vdc, I
= 0)
−
−
0.3
0.3
CE
B
TIP31BG, TIP31CG, TIP32BG, TIP32CG
Collector Cutoff Current
I
m
Adc
CES
(V =
40 Vdc, V
= 0)
CE
EB
TIP31G, TIP32G
(V =
60 Vdc, V
= 0)
−
−
−
−
200
200
200
200
CE
EB
TIP31AG, TIP32AG
(V =
80 Vdc, V
= 0)
CE
EB
TIP31BG, TIP32BG
(V =
100 Vdc, V
= 0)
CE
EB
TIP31CG, TIP32CG
Emitter Cutoff Current
I
mAdc
−
EBO
(V =
5.0 Vdc, I
= 0)
−
1.0
BE
C
DC Current Gain
h
FE
(I =
1.0 Adc, V
= 4.0 Vdc)
25
10
−
50
C
CE
(I =
3.0 Adc, V
= 4.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I =
3.0 Adc, I
= 375 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
1.2
1.8
C
B
Base−Emitter On Voltage
(I =
3.0 Adc, V
= 4.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
f
MHz
−
T
(I =
500 mAdc, V
= 10 Vdc, f
= 1.0 MHz)
3.0
20
−
−
C
CE
test
Small−Signal Current Gain
(I =
0.5 Adc, V
= 10 Vdc, f = 1.0 kHz)
h
fe
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
2
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
T
C
T
A
40 4.0
T
C
30 3.0
20 2.0
10 1.0
T
A
0
0
0
20
40
60
100
120
140
160
80
T,
T
EMPERATURE (
°
C)
Figure 1. Power Derating
TURN−ON PULSE
V
CC
APPROX
+11 V
R
C
SCOPE
V
in
V
0
in
R
B
V
EB(off)
t
1
C
<< C
eb
jd
t
3
APPROX
+11 V
−
4
.0 V
t
1
≤
7.0 ns
100 < t
< 500
m
s
2
t <
15 ns
3
V
in
t
DUTY CYCLE
≈
2.0%
APPROX
−
9
.0 V
2
TURN−OFF PULSE
R
and R
VARIED TO OBTAIN DESIRED CURRENT LEVELS.
B
C
Figure 2. Switching Time Equivalent Circuit
2.0
1.0
I /I
= 10
T =
25
°
C
J
C
B
0.7
0.5
t @
V =
30 V
r
CC
0.3
t @
V =
10 V
r
CC
0.1
0.07
0.05
t @
V
= 2.0 V
d
EB(off)
0.03
0.02
0.03 0.05
0.1
0.3 0.5
1.0
3.0
I ,
COLLECTOR CURRENT (AMP)
C
Figure 3. Turn−On Time
3
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
P
(pk)
Z
= r(t) R
q
JC
q
JC(t)
0.05
0.02
R
(t) = 3.125
°
C/W MAX
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
0.03
0.02
READ TIME AT t
t
1
2
0.01
0.02
T
– T
= P
C
Z
q
(pk) JC(t)
J(pk)
DUTY CYCLE, D = t
/t
1
2
SINGLE PULSE
0.05 1.0
0.01
0.01
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
t, TIME (ms)
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
5.0
breakdown. Safe operating area curves indicate I
− V
C
CE
100ꢀ
m
s
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
5.0ꢀms
2.0
1.0ꢀms
SECONDARY BREAKDOWN
LIMITED @ T
≤
150
°
C
THERMAL LIMIT @ T
= 25
°
C
1.0
0.5
= 150
°
C; T
is
J(pk)
C
J
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
C
J(pk)
(SINGLE PULSE)
BONDING WIRE LIMIT
≤
150
°
C. T
J(pk)
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
0.2
0.1
CURVES APPLY
BELOW RATED V
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
CEO
5.0
10
20
50
100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
3.0
2.0
300
I
= I
B1 B2
I /I
= 10
T =
+ꢂ25
°
C
J
C
B
t
′
s
200
t
′
= t
– 1/8 t
s
s
f
1.0
t @
V =
30 V
f CC
T =
25
°
C
J
0.7
0.5
100
0.3
0.2
t @
V =
10 V
f CC
C
eb
70
50
0.1
0.07
0.05
C
cb
0.03
30
0.03 0.05
0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
40
I ,
COLLECTOR CURRENT (AMP)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 6. Turn−Off Time
Figure 7. Capacitance
4
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
500
300
2.0
T =
25
°
C
J
T =
150
°
C
J
V
CE
= 2.0 V
1.6
1.2
0.8
0.4
0
25
°
C
100
70
I =
0.3 A
C
1.0 A
3.0 A
-ꢂ55
°
C
50
30
10
7.0
5.0
0.03 0.05
0.07 0.1
0.3
0.5 0.7 1.0
3.0
1.0
2.0
5.0
10
20
50
100 200
500 1000
I ,
COLLECTOR CURRENT (AMP)
C
I ,
BASE CURRENT (mA)
B
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
1.4
1.2
1.0
0.8
+ꢂ2.5
+ꢂ2.0
+ꢂ1.5
+ꢂ1.0
T =
25
°
C
J
*APPLIES FOR I
/I
≤
h /2
T =
-ꢂ65
°
C TO +ꢂ150
°
C
J
C
B
FE
+ꢂ0.5
0
*
q
FOR V
VC CE(sat)
V
@ I
/I =
10
C B
BE(sat)
0.6
0.4
0.2
0
-ꢂ0.5
-ꢂ1.0
-ꢂ1.5
V
BE
@ V
= 2.0 V
CE
q
FOR V
BE
VB
V
@ I
/I =
10
C B
CE(sat)
-ꢂ2.0
-ꢂ2.5
0.003 0.005
0.01 0.02
0.03 0.05
0.1 0.2
0.3 0.5
1.0 2.0
3.0
0.003 0.005
0.01 0.02
0.05 0.1
0.2 0.3
0.5
1.0 2.0
3.0
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
3
2
7
10
10
10
10
10
V
= 30 V
CE
V
CE
= 30 V
I =
10 x I
C
CES
6
10
T =
150
°
C
J
1
0
I
C
≈
I
CES
5
10
100
°
C
4
10
I =
2 x I
C
CES
-1
-2
-3
REVERSE
FORWARD
10
10
10
3
10
(TYPICAL I
VALUES
CES
OBTAINED FROM FIGURE 12)
25
°
C
I
CES
2
10
-ꢂ0.4 -ꢂ0.3 -ꢂ0.2 -ꢂ0.1
0
+ꢂ0.1 +ꢂ0.2 +ꢂ0.3 +ꢂ0.4 +ꢂ0.5
+ꢂ0.6
20
40
60
80
100
120
140
160
V
BE
, BASE−EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 12. Collector Cut−Off Region
Figure 13. Effects of Base−Emitter Resistance
5
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
ORDERING INFORMATION
Device
Package
Shipping
TIP31G
TO−220
(Pb−Free)
50 Units / Rail
TIP31AG
TIP31BG
TIP31CG
TIP32G
TO−220
(Pb−Free)
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TIP32AG
TIP32BG
TIP32CG
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
6
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN
MILLIMETERS
4
1
MAX
0.620
0.415
0.190
0.038
0.161
0.105
0.161
0.024
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
—
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
—
MAX
15.75
10.53
4.83
0.96
4.09
2.66
4.10
0.61
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
—
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
—
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and the
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at
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. SCILLC
reserves the right to make changes without further notice to any products herein.
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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts.
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:
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o
ll Free
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TIP31A/D
