onsemi-TIP42AG
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TIP41G, TIP41AG, TIP41BG,
TIP41CG (NPN),
TIP42G,ꢀTIP42AG, TIP42BG,
TIP42CGꢀ(PNP)
Complementary Silicon
Plastic Power
T
r
ansistors
6 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
40
−
60
−
80
−
100 VOLTS,
65 WATTS
Designed for use in general purpose amplifier and switching
applications.
Features
•
Epoxy Meets UL 94 V
−
0 @ 0.125 in
•
These Devices are Pb
−
Free and are RoHS Compliant*
MAXIMUM RATINGS
PNP
NPN
Rating
Symbol
Value
Unit
COLLECTOR
2,4
COLLECTOR
2,4
Collector
−
Emitter Voltage
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
V
CEO
Vdc
40
60
80
100
1
1
BASE
BASE
Collector
−
Base Voltage
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
V
CB
Vdc
3
3
40
60
EMITTER
EMITTER
80
100
4
Emitter
−
Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak
Base Current
V
5.0
6.0
10
Vdc
Adc
Adc
Adc
EB
TO
−
220
CASE 221A
STYLE 1
I
C
I
CM
I
2.0
B
1
2
3
T
o
tal Power Dissipation
P
P
D
@ T
= 25
°
C
65
0.52
W
W/
°
C
C
Derate above 25
°
C
MARKING DIAGRAM
T
o
tal Power Dissipation
D
@ T
= 25
°
C
2.0
0.016
W
W/
°
C
A
Derate above 25
°
C
Unclamped Inductive Load Energy
E
62.5
mJ
TIP4xxG
AYWW
Operating and Storage Junction,
T
e
mperature Range
T , T
–
6
5 to +150
°
C
J
stg
ESD
−
Human Body Model
ESD
−
Machine Model
HBM
MM
3B
C
V
V
TIP4xx =
Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
xx
= 1,
1A, 1B, 1C
2, 2A, 2B, 2C
1. I
= 2.5 A, L = 20 mH,
P
.
R.
F
. =
1
0 Hz, V
= 10
V
, R
=
1
00
W
.
A
Y
= Assembly
Location
=
Y
e
ar
C
CC
BE
WW
G
= Work
Week
= Pb
−
Free Package
*For additional information on our Pb
−
Free strategy
and soldering details, please
download the ON
Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
October, 2014
−
Rev. 11
TIP41A/D
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
1.67
57
Unit
°
C/W
°
C/W
Thermal Resistance, Junction
−
to
−
Case
Thermal Resistance, Junction
−
to
−
Ambient
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
V
Vdc
CEO(sus)
(I =
30 mAdc, I
= 0)
C
B
TIP41G, TIP42G
40
60
−
−
−
−
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
80
100
Collector Cutoff Current
I
mAdc
CEO
(V =
30 Vdc, I
= 0)
CE
B
TIP41G, TIP41AG, TIP42G, TIP42AG
(V =
60 Vdc, I
= 0)
−
−
0.7
0.7
CE
B
TIP41BG, TIP41CG, TIP42BG, TIP42CG
Collector Cutoff Current
I
m
Adc
CES
(V =
40 Vdc, V
= 0)
CE
EB
TIP41G, TIP42G
(V =
60 Vdc, V
= 0)
−
−
−
400
400
400
CE
EB
TIP41AG, TIP42AG
(V =
80 Vdc, V
= 0)
CE
EB
TIP41BG, TIP42BG
(V =
100 Vdc, V
= 0)
CE
EB
TIP41CG, TIP42CG
−
−
400
1.0
Emitter Cutoff Current (V
= 5.0 Vdc, I
= 0)
I
EBO
mAdc
BE
C
DC Current Gain
h
FE
−
(I =
0.3 Adc, V
= 4.0 Vdc)
30
15
−
75
C
CE
(I =
3.0 Adc, V
= 4.0 Vdc)
C
CE
Collector
−
Emitter Saturation Voltage
(I =
6.0 Adc, I
= 600 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
1.5
2.0
C
B
Base
−
Emitter On Voltage
(I =
6.0 Adc, V
= 4.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current
−
Gain
−
Bandwidth Product
f
MHz
T
(I =
500 mAdc, V
= 10 Vdc, f
= 1.0 MHz)
3.0
20
−
−
C
CE
test
Small
−
Signal Current Gain
(I =
0.5 Adc, V
= 10 Vdc, f = 1.0 kHz)
h
−
fe
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
2
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
T
A
T
C
4.0 80
3.0 60
2.0 40
1.0 20
T
C
T
A
0
0
0
20
40
60
100
120
140
160
80
T, TEMPERATURE (
°
C)
Figure 1. Power Derating
V
CC
+ꢂ30 V
R
25
m
s
C
SCOPE
+11 V
0
R
B
-ꢂ9.0 V
t , t
≤
10 ns
DUTY CYCLE = 1.0%
D
1
r
f
-ꢂ4 V
R and
R VARIED
TO OBTAIN DESIRED CURRENT LEVELS
B C
D MUST
BE FAST RECOVERY TYPE, e.g.:
1
ꢃꢃ1N5825 USED ABOVE I
≈
100 mA
B
ꢃꢃMSD6100 USED BELOW I
≈
100 mA
B
Figure 2. Switching Time Test Circuit
2.0
1.0
T =
25
°
C
J
V
CC
I /I
= 10
= 30 V
0.7
0.5
C
B
0.3
0.2
t
r
0.1
0.07
0.05
t @
V
d
≈
5.0 V
BE(off)
0.03
0.02
0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0 6.0
I ,
COLLECTOR CURRENT (AMP)
C
Figure 3. Turn
−
On Time
3
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
0.1
0.07
0.05
(pk)
Z
= r(t) R
q
JC
q
JC(t)
0.05
R
= 1.92
°
C/W MAX
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
0.01
t
1
0.03
0.02
t
1
2
T
– T
= P
C
Z
q
(pk) JC(t)
J(pk)
DUTY CYCLE, D = t
/t
1
2
SINGLE PULSE
0.05
0.01
0.01
0.02
1.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
t, TIME (ms)
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
0.5ꢁms
5.0
breakdown. Safe operating area curves indicate I
−
V
C
CE
1.0ꢁms
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
3.0
2.0
T =
150
°
C
J
CURVES APPLY BELOW RATED V
CEO
SECONDARY BREAKDOWN LTD
BONDING WIRE LTD
5.0ꢁms
1.0
0.5
= 150
°
C; T
is
J(pk)
C
THERMAL LIMITATION @ T
= 25
°
C
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
C
(SINGLE PULSE)
J(pk)
≤
150
°
C. T
0.3
0.2
J(pk)
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1
5.0
10
20
40
60
80 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active
−
Region Safe Operating Area
5.0
300
T =
25
°
C
J
3.0
2.0
T =
25
°
C
J
200
V
CC
I /I
= 10
= 30 V
C
B
t
s
I =
I
B1 B2
1.0
C
C
ib
0.7
0.5
100
70
0.3
0.2
t
f
ob
50
0.1
0.07
0.05
30
0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0 6.0
0.5
1.0
2.0 3.0
5.0
10
20 30
50
I ,
COLLECTOR CURRENT (AMP)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 6. Turn
−
Off Time
Figure 7. Capacitance
4
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
2.0
500
T =
25
°
C
300
200
J
V
CE
= 2.0 V
1.6
1.2
0.8
0.4
0
T =
150
°
C
J
100
70
25
°
C
I =
1.0 A
C
2.5 A
5.0 A
50
30
20
-ꢂ55
°
C
10
7.0
5.0
0.06 0.1
0.2 0.3
0.4 0.6
1.0
2.0
4.0 6.0
10
20 30
50
100
200 300
500
1000
I ,
COLLECTOR CURRENT (AMP)
C
I ,
BASE CURRENT (mA)
B
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
2.0
1.6
1.2
0.8
0.4
0
+ꢂ2.5
+ꢂ2.0
+ꢂ1.5
T =
25
°
C
J
*APPLIES FOR I
/I
≤
h /4
C
B
FE
+ꢂ1.0
+ꢂ0.5
0
+ꢂ25
°
C to +ꢂ150
°
C
*ꢂ
q
FOR V
VC
CE(sat)
-ꢂ55
°
C to +ꢂ25
°
C
+ꢂ25
°
C to +ꢂ150
°
C
V
V
@ I
/I =
10
C B
BE(sat)
-ꢂ0.5
-ꢂ1.0
-ꢂ1.5
-ꢂ2.0
-ꢂ2.5
V
@ V
= 4.0 V
CE
BE
q
FOR V
BE
VB
-ꢂ55
°
C to +ꢂ25
°
C
@ I
/I =
10
C B
CE(sat)
0.06 0.1
0.2 0.3
0.4 0.6
1.0
2.0 3.0 4.0
6.0
0.06 0.1
0.2 0.3
0.5
1.0
2.0 3.0
4.0 6.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
3
2
10
10
10
10
10ꢁM
V
= 30 V
CE
V
CE
= 30 V
1.0ꢁM
100ꢁk
10ꢁk
I =
10 x I
C
CES
T =
150
°
C
J
1
0
100
°
C
I
C
≈
I
CES
25
°
C
I =
I
C
-1
CES
I =
2 x I
C
CES
10
10
10
1.0ꢁk
0.1ꢁk
-2
REVERSE
FORWARD
(TYPICAL I
VALUES
CES
OBTAINED FROM FIGURE 12)
-3
-ꢂ0.3 -ꢂ0.2
-ꢂ0.1
V
0
+ꢂ0.1 +ꢂ0.2 +ꢂ0.3 +ꢂ0.4 +ꢂ0.5 +ꢂ0.6
+ꢂ0.7
20
40
60
80
100
120
140
160
, BASE-EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (
°
C)
BE
J
Figure 12. Collector Cut
−
Off Region
Figure 13. Effects of Base
−
Emitter Resistance
5
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
ORDERING INFORMATION
Device
Package
Shipping
TIP41G
TO
−
220
(Pb
−
Free)
50 Units / Rail
TIP41AG
TIP41BG
TIP41CG
TIP42G
TO
−
220
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
(Pb
−
Free)
TO
−
220
(Pb
−
Free)
TO
−
220
(Pb
−
Free)
TO
−
220
(Pb
−
Free)
TIP42AG
TIP42BG
TIP42CG
TO
−
220
(Pb
−
Free)
TO
−
220
(Pb
−
Free)
TO
−
220
(Pb
−
Free)
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
STYLE 2:
PIN 1.
BASE
2. EMITTER
STYLE 3:
PIN 1.
CATHODE
STYLE 4:
PIN 1.
MAIN TERMINAL 1
2. ANODE
3. GATE
2. MAIN
TERMINAL 2
3. GATE
3. EMITTER
3. COLLECTOR
4. EMITTER
4. COLLECTOR
4. ANODE
4. MAIN
TERMINAL 2
STYLE 5:
PIN 1.
GATE
STYLE 6:
PIN 1.
ANODE
STYLE 7:
STYLE 8:
PIN 1.
CATHODE
2. ANODE
PIN 1.
CATHODE
2. ANODE
2. DRAIN
3. SOURCE
4. DRAIN
2. CATHODE
3. ANODE
3. CATHODE
4. ANODE
3. EXTERNAL
TRIP/DELAY
4. ANODE
4. CATHODE
STYLE 9:
PIN 1.
GATE
STYLE 10:
PIN 1.
GATE
STYLE 11:
STYLE 12:
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
2. COLLECTOR
3. EMITTER
2. SOURCE
3. DRAIN
4. COLLECTOR
4. SOURCE
4. SOURCE
4. NOT
CONNECTED
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO
−
220
PAGE 1 OF 1
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Semiconductor Components Industries, LLC, 2019
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:
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