onsemi-ULQ2003ADR2G
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ULN2003A, ULQ2003A
High Voltage, High Current
Darlington
T
r
ansistor Arrays
The seven NPN Darlington connected transistors in these arrays are
well suited for driving lamps, relays, or printer hammers in a variety of
industrial and consumer applications. Their high breakdown voltage
and internal suppression diodes insure freedom from problems
associated with inductive loads. Peak inrush currents to 500 mA
permit them to drive incandescent lamps.
MARKING
DIAGRAMS
The ULx2003A with a 2.7 k
W
series input resistor is well suited for
systems utilizing a 5.0 V TTL or CMOS Logic.
16
16
1
Features
ULN2003AG
AWLYWW
SOIC-16
D SUFFIX
CASE 751B
•
ꢀThese are Pb-Free Devices
1
1/7 ULx2003A
16
A
= Assembly Location
2.7 k
5.0 k
Pin 9
WL =
Wafer Lot
=
Y
e
ar
WW =
Work Week
= Pb-Free Package
ULQ2003AG
AWLYWW
Y
3.0 k
G
1
ORDERING INFORMATION
Figure 1. Representative Schematic Diagram
†
Device
Package
Shipping
ULN2003ADR2G SOIC-16
(Pb-Free)
2500
T
a
pe & Reel
1
2
3
4
5
6
16
15
14
13
12
11
10
9
ULQ2003ADR2G SOIC-16
(Pb-Free)
2500
T
a
pe & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
7
8
(
T
o
p View)
Figure 2. Pin Connections
©
ꢀ Semiconductor Components Industries, LLC, 2007
November, 2007 – Rev. 0
1
Publication Order Number:
ULN2003A/D
ULN2003A, ULQ2003A
MAXIMUM RATINGS
(T =
25
°
C, and rating apply to any one device in the package, unless otherwise noted.)
A
Rating
Symbol
Value
50
Unit
V
Output Voltage
V
O
Input Voltage
V
I
30
V
Collector Current – Continuous
Base Current – Continuous
I
500
25
mA
mA
°
C
C
I
B
Operating Ambient
T
e
mperature Range
ULN2003A
T
A
-20 to +85
-40 to +85
ULQ2003A
Storage
T
e
mperature Range
Junction
T
e
mperature
T
-55 to +150
150
°
C
°
C
stg
T
J
Thermal Resistance, Junction-to-Ambient
Case 751B, D Suffix
R
°
C/W
q
JA
100
20
Thermal Resistance, Junction-to-Case
Case 751B, D Suffix
R
°
C/W
q
JC
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
ESD
V
2000
400
1500
Charged Device Model (CDM)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2
ULN2003A, ULQ2003A
ELECTRICAL CHARACTERISTICS
(T =
25
°
C, unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Output Leakage Current
(V =
50
V
, T
=
+
85
°
C)
I
m
A
CEX
–
–
–
–
100
50
O
A
(V =
50
V
, T
=
+
25
°
C)
O
A
Collector-Emitter Saturation Voltage
(I =
350 mA, I
= 500
m
A)
(I =
200 mA, I
= 350
m
A)
V
V
CE(sat)
–
–
–
1.1
1.6
1.3
1.1
C
B
0.95
0.85
C
B
(I =
100 mA, I
= 250
m
A)
C B
Input Current – On Condition
(V =
3.85 V)
I
mA
V
I(on)
–
0.93
1.35
I
Input Voltage – On Condition
(V =
2.0
V
, I
=
2
00 mA)
V
I(on)
–
–
–
–
–
–
2.4
2.7
3.0
CE C
(V =
2.0
V
, I
=
2
50 mA)
CE C
(V =
2.0
V
, I
=
3
00 mA)
CE
C
Input Current – Off Condition
(I =
500
m
A, T
= 85
°
C)
I
50
100
–
m
A
I(off)
C
A
DC Current Gain
(V =
2.0
V
, I
=
3
50 mA)
h
FE
1000
–
–
–
CE
C
Input Capacitance
C
–
–
15
30
pF
I
Turn-On Delay Time
(50% E
to 50% E
)
t
on
0.25
1.0
m
s
I
O
Turn-Off Delay Time
(50% E
to 50% E
)
t
–
0.25
1.0
m
s
m
A
V
off
I
O
Clamp Diode Leakage Current
(V =
50 V)
T
= +25
°
C
= +85
°
C
A
I
–
–
–
–
50
100
A
R
T
R
Clamp Diode Forward Voltage
(I =
350 mA)
V
–
1.5
2.0
F
F
3
ULN2003A, ULQ2003A
TYPICAL PERFORMANCE CURVES – T
A
= 25
°
C
400
300
200
400
300
200
100
0
100
0
0
1.0
2.0
3.0 4.0 5.0
8.0
9.0
10
11
12
0
50
100
150
200
250
300
350
400
V , INPUT VOLTAGE (V)
I
I , INPUT CURRENT (
m
A)
I
Figure 3. Output Current versus Input Voltage
Figure 4. Output Current versus Input Current
800
700
2.5
PIN 13
2.0
1.5
600
500
400
300
200
PIN 10
1 Output Conducting at a Time
PIN 16
Maximum
Typical
1.0
0.5
0
100
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
1.6
, SATURATION VOLTAGE (V)
V , INPUT VOLTAGE (V)
I
CE(sat)
Figure 5. Typical Output Characteristics
Figure 6. Input Characteristics
1000
700
1
2
3
500
300
200
4
5
6
7
100
10
20
30
% DUTY CYCLE
50
70
100
Figure 7. Maximum Collector Current
versus Duty Cycle
(and Number of Drivers in Use)
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC
−
16
CASE 751B
−
05
ISSUE K
DATE 29 DEC 2006
SCALE 1:1
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
−
A
−
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSIONS
A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM
MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION
D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION
SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL CONDITION.
16
9
8
−
B
−
P
8 PL
M
S
B
0.25 (0.010)
1
MILLIMETERS
INCHES
MIN
0.386
DIM MIN
MAX
MAX
0.393
0.157
0.068
0.019
0.049
A
B
C
D
F
9.80
3.80
1.35
0.35
0.40
10.00
G
4.00 0.150
1.75 0.054
0.49 0.014
1.25 0.016
F
R
X 45
K
_
G
J
1.27 BSC
0.050 BSC
0.19
0.10
0
0.25 0.008
0.25 0.004
0.009
0.009
7
K
M
P
R
C
7
0
_
_
_
_
−
T
−
SEATING
PLANE
5.80
0.25
6.20 0.229
0.50 0.010
0.244
0.019
J
M
D
16 PL
M
S
S
A
0.25 (0.010)
T B
STYLE 1:
STYLE 2:
STYLE 3:
STYLE 4:
PIN 1.
COLLECTOR
2. BASE
3. EMITTER
4. NO
CONNECTION
5. EMITTER
6. BASE
7. COLLECTOR
8. COLLECTOR
9. BASE
10. EMITTER
11. NO
CONNECTION
12. EMITTER
13. BASE
PIN 1.
CATHODE
2. ANODE
3. NO
CONNECTION
4. CATHODE
5. CATHODE
6. NO
CONNECTION
7. ANODE
8. CATHODE
9. CATHODE
10. ANODE
11. NO
CONNECTION
12. CATHODE
13. CATHODE
14. NO
CONNECTION
15. ANODE
PIN 1.
COLLECTOR, DYE #1
2. BASE,
#1
3. EMITTER,
#1
4. COLLECTOR,
#1
5. COLLECTOR,
#2
6. BASE,
#2
PIN 1.
COLLECTOR, DYE #1
2. COLLECTOR,
#1
3. COLLECTOR,
#2
4. COLLECTOR,
#2
5. COLLECTOR,
#3
6. COLLECTOR,
#3
7. COLLECTOR,
#4
8. COLLECTOR,
#4
9. BASE,
#4
10. EMITTER,
#4
11. BASE,
#3
12. EMITTER,
#3
13. BASE,
#2
7. EMITTER,
#2
8. COLLECTOR,
#2
9. COLLECTOR,
#3
10. BASE,
#3
11. EMITTER,
#3
12. COLLECTOR,
#3
13. COLLECTOR,
#4
14. BASE,
#4
SOLDERING FOOTPRINT
14. COLLECTOR
15. EMITTER
16. COLLECTOR
14. EMITTER,
#2
15. BASE,
#1
16. EMITTER,
#1
15. EMITTER,
#4
16. COLLECTOR,
#4
8X
6.40
16. CATHODE
16X
1.12
STYLE 5:
STYLE 6:
STYLE 7:
PIN 1.
SOURCE N‐CH
PIN 1.
DRAIN, DYE #1
2. DRAIN,
#1
3. DRAIN,
#2
4. DRAIN,
#2
5. DRAIN,
#3
6. DRAIN,
#3
7. DRAIN,
#4
8. DRAIN,
#4
9. GATE,
#4
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
7. CATHODE
8. CATHODE
9. ANODE
2. COMMON
DRAIN (OUTPUT)
3. COMMON
DRAIN (OUTPUT)
4. GATE
P‐CH
5. COMMON
DRAIN (OUTPUT)
6. COMMON
DRAIN (OUTPUT)
7. COMMON
DRAIN (OUTPUT)
8. SOURCE
P‐CH
1
16
16X
0.58
9. SOURCE
P‐CH
10. SOURCE,
#4
11. GATE,
#3
12. SOURCE,
#3
13. GATE,
#2
14. SOURCE,
#2
15. GATE,
#1
16. SOURCE,
#1
10. ANODE
11. ANODE
12. ANODE
13. ANODE
14. ANODE
15. ANODE
16. ANODE
10. COMMON
DRAIN (OUTPUT)
11. COMMON
DRAIN (OUTPUT)
12. COMMON
DRAIN (OUTPUT)
13. GATE
N‐CH
14. COMMON
DRAIN (OUTPUT)
15. COMMON
DRAIN (OUTPUT)
16. SOURCE
N‐CH
1.27
PITCH
8
9
DIMENSIONS: MILLIMETERS
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42566B
SOIC
−
16
PAGE 1 OF 1
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