onsemi-VEC2315-TL-W

VEC2315  

Power MOSFET  

–60

V

,

1

37m

Ω

, –2.5A, Dual P-Channel  

This Power MOSFET is produced using ON Semiconductor’s trench  

technology, which is specifically designed to minimize gate charge and

 

low  

on resistance. This device is suitable for applications with low gate charge  

driving or low on resistance requirements.  

ww

w

.onsemi.com  

Features  



Low On-Resistance  



4V drive  



Low-Profile Package  



ESD Diode-Protected Gate  



Pb-Free, Halogen Free and RoHS compliance  

V

R

(on) Max  

I

D Max  

DSS  

DS  

137m

Ω

@



10V  

180m

Ω

@



4.5V  

194m

Ω

@



4V  



60V  



2.5A  

ELECTRICAL CONNECTION  

P-Channel  

Typical Applications  



Motor Driver  

8

7

6

5

SPECIFICATIONS  

ABSOLUTE MAXIMUM RATING

at Ta = 25



C

(Note 1)  

Parameter  

Drain to Source Voltage  

Gate to Source Voltage  

Drain Current (DC)  

1

:

S

o

urce1  

2

:

G

a

t

e

1  

3

:

S

o

urce2  

4

:

G

a

t

e

2  

5

:

D

rain2  

6

:

D

rain2  

7

:

D

rain1  

8

:

D

rain1  

Symbol  

Value  

Unit  

V

V

V



60  



20  

DSS  

GSS  

V

I



2.5  

A

D

1

2

3

4

Drain Current (Pulse)  

I



10  

A

DP  

PW



10



s, duty cycle



1%  

Power Dissipation  

PACKING TYPE : TL  

MARKING  

When mounted on ceramic substrate  

(900mm

2



0.8mm) 1unit  

Total Dissipation  

P

P

0.9  

W

D

T

UM  

LOT No.  

When mounted on ceramic substrate  

(900mm

2



0.8mm)  

1.0  

W

TL  

Junction Temperature  

Tj  

150  



C  



C  

Storage Temperature  

Tstg  



55 to +150  

ORDERING INFORM

A

T

ION  

See detailed ordering and shipping  

information on page 5 of this data sheet.  

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage  

the device. If any of these limits are exceeded, device functionality should not  

be assumed, damage may occur and reliability may be affected.  

THERMAL RESISTANCE RATINGS  

Parameter  

Junction to Ambient  

Symbol  

Value  

Unit  

R



JA  

138.8  



C/W  

When mounted on ceramic substrate  

(900mm

2



0.8mm) 1unit  

©

Semiconductor Components Industries, LLC, 2015  

October 2015 – Re

v

. 1  

1

Publication Order Number :  

VEC2315/D  

VEC2315  

ELECTRICAL CHARACTERISTICS

at Ta



25



C

(Note 2)  

Value  

typ  

Parameter  

Symbol  

V(  

Conditions  

Unit  

min  



60  

max  

Drain to Source Breakdown Voltage  

Zero-Gate Voltage Drain Current  

Gate to Source Leakage Current  

Gate Threshold Voltage  

)

I =



1mA, V

 

=0V  

V



A  



A  

V

BR DSS  

D

GS  

=



60V, V

 

=0V  

I

I

V



1  

DSS  

GSS  

DS  

GS  

DS  

DS  

GS  

V

V

V

=



16V, V

 

=0V  

DS  



10  

V

(th)  

=



10V, I

 

=



1mA  



1.2  



2.6  

GS  

FS  

D

Forward Transconductance  

g

=



10V, I

 

=



1.5A  

3.9  

105  

128  

138  

420  

54  

S

D

R

DS  

R

DS  

R

DS  

(on)1  

(on)2  

(on)3  

I =



1.5A, V

 

=



10V  

GS  

137  

180  

194  

m

  

m

  

m

  

pF  

pF  

pF  

ns  

ns  

ns  

ns  

nC  

nC  

nC  

V

D

Static Drain to Source On-State  

Resistance  

I =



0.75A, V

 

=



4.5V  

GS  

D

I =



0.75A, V

 

=



4V  

D

GS  

Input Capacitance  

Ciss  

Output Capacitance  

Reverse Transfer Capacitance  

Turn-ON Delay Time  

Rise Time  

Coss  

Crss  

V

=



20V, f=1MHz  

DS  

44  

t (on)  

d

6.4  

9.8  

65  

t

r

See specified Test Circuit  

Turn-OFF Delay Time  

Fall Time  

t (off)  

d

36  

t

f

Total Gate Charge  

Gate to Source Charge  

Gate to Drain “Miller” Charge  

Forward Diode Voltage  

Qg  

11  

Qgs  

Qgd  

1.4  

2

V

=



30V, V

 

=



10V, I

 

=



2.5A  

GS  

DS  

D

V

I =



2.5A, V

 

=0V  

GS  



0.83  



1.2  

SD  

S

Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.  

Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.  

Switching Time Test Circuit  

V =

 

–

–

30V  

DD  

V

IN  

0V  

–

–

10V  

I =

 

–

–

1.5A  

D

V

IN  

R =20



 

L

D

V

OUT  

PW

=

10



s  

D.C.

≤

1%  

G

VEC

2

315  

P

.

G  

50

  

S

2

VEC2315  

3

VEC2315  

4

VEC2315  

PACKAGE DIMENSIONS  

unit : mm  

SOT-28FL / VEC8  

CASE 318AH  

ISSUE O  

to  

1 : Source1  

2 : Gate1  

3 : Source2  

4 : Gate2  

5 : Drain2  

6 : Drain2  

7 : Drain1  

8 : Drain1  

Recommended  

Soldering Footprint  

0.4  

0.65  

ORDERING INFORMATION  

Device  

Marking  

UM  

Package  

Shipping (Qty / Packing)  

VEC2315-TL-H  

VEC2315-TL-W  

SOT-28FL / VEC8  

(Pb-Free / Halogen Free)  

3,000 / Tape & Reel  

† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our

T

a

pe and Reel Packaging Specifications  

Brochure, BRD8011/D.

 

http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF  

Note on usage : Since the VEC2315 is a MOSFET product, please avoid using this device in the vicinity  

of highly charged objects.  

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiarie

s

i

n the United States  

and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of  

S

CILLC reserves the right to make changes without  

further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilit

y

o

f its products for any particular purpose,  

nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including  

without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can  

and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each  

customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are  

not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other application

s

i

ntended to support or  

sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,  

employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,  

directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was  

negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all  

applicable copyright laws and is not for resale in any manner.  

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