onsemi-ZTX749A

ZTX749A  

PNP Low Saturation Transistor  

•

This device are designed with high current gain and low saturation  

voltage with collector currents up to 2A continuous.  

C

TO-226  

B

E

Absolute Maximum Ratings

T =25

°

C unless otherwise noted  

A

Symbol  

Parameter  

Value  

-35  

-45  

-5  

Units  

V

V

V

V

Collector-Emitter Voltage  

CEO  

Collector-Base Voltage  

Emitter-Base Voltage  

Collector Current  

V

CBO  

EBO  

V

I

– Continuous  

-2  

A

C

T , T  

Operating and Storage Junction

T

e

mperature Range  

-55 ~ +150  

°

C  

J

STG  

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  

NOTES:  

1. These

 

ratings are based on a maximum junction temperature of 150

°

C.  

2. These

 

are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  

Electrical Characteristics

T =25

°

C unless otherwise noted  

A

Symbol  

Parameter  

Test Condition  

Min.  

Max.  

Units  

Off Characteristics  

BV  

BV  

BV  

Collector-Emitter Breakdown Voltage  

Collector-Base Breakdown Voltage  

Emitter-Base Breakdown Voltage  

Collector Cutoff Current  

I

I

I

= -10mA  

-35  

-45  

-5  

V

V

V

CEO  

CBO  

EBO  

C

C

E

= -100

µ

A  

= -100

µ

A  

I

V

V

= -30V  

= -30

V

, T

 

=

1

00

°

C  

-100  

-10  

nA  

µ

A  

CBO  

CB  

CB  

A

I

Emitter Cutoff Current  

V

= -4V  

-100  

nA  

EBO  

EB  

On Characteristics*  

h

DC Current Gain  

I

I

I

I

= -50mA, V

 

= -2V  

70  

100  

75  

FE  

C

C

C

C

CE  

= -1A, V

 

= -2V  

300  

CE  

= -2A, V

 

= -2V  

CE  

= -6A, V

 

= -2V  

15  

CE  

V

(sat)  

Collector-Emitter Saturation Voltage  

I

I

= -1A, I

 

= -100mA  

-300  

-500  

mV  

CE  

C

C

B

= -2A, I

 

= -200mA  

B

V

V

(sat)  

(on)  

Base-Emitter Saturation Voltage  

Base-Emitter On Voltage  

I

I

= -1A, I

 

= -100mA  

-1.25  

-1  

V

V

BE  

C

C

B

= -1A, V

 

= -2V  

BE  

CE  

Small-Signal Characteristics  

C

Output Capacitance  

Transition Frequency  

V

= -10

V

, I

 

=

0

, f = 1MHz  

100  

P

F  

obo  

CB  

E

f

I

= -100mA, V

 

= -5V  

100  

T

C

CE  

f = 100MHz  

* Pulse Test: Pulse Width

≤

300

µ

s, Duty Cycle

≤

2%  

Thermal Characteristics

T =25

°

C unless otherwise noted  

A

Symbol  

Parameter  

Max.  

1

Units  

P

T

o

tal Device Dissipation  

Thermal Resistance, Junction to Ambient  

W

D

R

125  

°

C/W  

θ

JA  

©2003 Fairchild Semiconductor Corporation  

Rev. C, August 2003  

Package Dimensions  

TO-226  

For leadformed option ordering,  

refer to

T

a

pe & Reel data information.  

Dimensions in Millimeters  

©2003 Fairchild Semiconductor Corporation  

Rev. C, August 2003  

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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  

intended to be an exhaustive list of all such trademarks.  

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PRODUCT STATUS DEFINITIONS  

Definition of Terms  

Datasheet Identification  

Product Status  

Definition  

Advance Information  

Formative or In  

Design  

This datasheet contains the design specifications for  

product development. Specifications may change in  

any manner without notice.  

Preliminary  

First Production  

This datasheet contains preliminary data, and  

supplementary data will be published at a later date.  

Fairchild Semiconductor reserves the right to make  

changes at any time without notice in order to improve  

design.  

No Identification Needed  

Obsolete  

Full Production  

This datasheet contains final specifications. Fairchild  

Semiconductor reserves the right to make changes at  

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Not In Production  

This datasheet contains specifications on a product  

that has been discontinued by Fairchild semiconductor.  

The datasheet is printed for reference information only.  

©2003 Fairchild Semiconductor Corporation  

Rev. I3