ORIENTAL-SEMI-OSG65R260FSF-NB
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OSG65R260FSF_NB_
Datasheet
Enhancement Mode
N-Channel Power MOSFET
Features
Applications
Low R
DS(on)
& FOM
Lighting
Extremely low switching loss
Excellent stability and uniformity
Easy to drive
Hard switching PWM
Server power supply
Charger
OSG65R260FSF_NB
Enhancement Mode N-Channel Power MOSFET
General Description
OSG65R260FSF_NB uses advanced GreenMOS
TM
technology to provide low R
DS(ON)
, low gate
charge, fast switching and excellent avalanche
characteristics. This device is suitable for active
power factor correction and switching mode
power supply applications.
V
DS, min@Tjmax
I
D, pulse
R
DS(ON), max @ VGS=10 V
Q
g
700 V
45 A
260 m
Ω
26.4 nC
Schematic and Package Information
Schematic Diagram
Pin Assignment Top View
TO220F
OSG65R260FSF_NB
Absolute Maximum Ratings
at T
j
=25
℃
unless otherwise noted
Parameter
Symbol
V
DS
Value
650
±
30
15
Unit
V
Drain source voltage
Gate source voltage
V
GS
V
Continuous drain current
1)
, T
C
=25
℃
Continuous drain current
1)
, T
C
=100
℃
Pulsed drain current
2)
, T
C
=25
℃
I
D
A
9.5
I
D, pulse
I
S
I
S, pulse
P
D
45
A
A
Continuous diode forward current
1)
, T
C
=25
℃
Diode pulsed current
2)
, T
C
=25
℃
15
45
A
Power dissipation
3)
, T
C
=25
℃
33
W
Single pulsed avalanche energy
5)
E
AS
360
50
mJ
V/ns
V/ns
℃
MOSFET dv/dt ruggedness, V
DS
=0
…
480 V
Reverse diode dv/dt, V
DS
=0
…
480 V, I
SD
≤
I
D
Operation and storage temperature
dv/dt
dv/dt
T
stg
，
T
j
15
-55 to 150
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OSG65R260FSF_NB
Enhancement Mode N-Channel Power MOSFET
Thermal Characteristics
Parameter
Symbol
R
θ
JC
Value
3.8
Unit
℃
/W
℃
/W
Thermal resistance, junction-case
Thermal resistance, junction-ambient
4)
R
θ
JA
62.5
Electrical Characteristics
at T
j
=25
℃
unless otherwise specified
Parameter
Symbol
BV
DSS
Min.
Typ.
Max.
Unit
V
Test condition
650
V
GS
=0 V, I
D
=250
μ
A
Drain-source breakdown voltage
Gate threshold voltage
V
GS
=0 V, I
D
=250
μ
A,
T
j
=150
℃
700
2.9
V
GS(th)
3.9
V
V
DS
=V
GS
, I
D
=250
μ
A
0.22
0.54
0.26
V
GS
=10 V, I
D
=7.5 A
Drain-source on-state resistance
R
DS(ON)
Ω
V
GS
=10 V, I
D
=7.5 A,
T
j
=150
℃
100
-100
1
V
GS
=30 V
Gate-source leakage current
I
GSS
nA
V
GS
=-30 V
Drain-source leakage current
Gate resistance
I
DSS
R
G
μ
A
V
DS
=650 V, V
GS
=0 V
f= 1 MHz,
Open drain
8.3
Ω
Dynamic Characteristics
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Symbol
C
iss
Min.
Typ.
1227
100.2
7.1
Max.
Unit
pF
pF
pF
ns
Test condition
V
GS
=0 V,
C
oss
C
rss
V
DS
=50 V,
ƒ=
100 kHz
t
d(on)
t
r
t
d(off)
t
f
24.7
7.3
V
GS
=10 V,
V
DS
=400 V,
R
G
=2
Ω
,
ns
Turn-off delay time
Fall time
56.3
9.5
ns
I
D
=8 A
ns
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OSG65R260FSF_NB
Enhancement Mode N-Channel Power MOSFET
Gate Charge Characteristics
Parameter
Total gate charge
Symbol
Q
g
Min.
Typ.
26.4
7.8
Max.
Unit
nC
nC
nC
V
Test condition
I
D
=8 A,
Gate-source charge
Gate-drain charge
Gate plateau voltage
Q
gs
V
DS
=400 V,
V
GS
=10 V
Q
gd
7.9
V
plateau
5.3
Body Diode Characteristics
Parameter
Diode forward voltage
Reverse recovery time
Symbol
Min.
Typ.
Max.
Unit
V
Test condition
V
SD
t
rr
1.4
I
S
=15 A, V
GS
=0 V
ns
μ
C
A
292
3.5
V
R
=400 V, I
S
=8 A,
Reverse recovery charge
Peak reverse recovery current
Q
rr
I
rrm
di/dt=100
A/μs
21.8
Note
1) Calculated
continuous current based on maximum allowable junction temperature.
2) Repetitive
rating; pulse width limited by max. junction temperature.
3) Pd
is based on max. junction temperature, using junction-case thermal resistance.
4) The
value of R
θJ
A
is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with T
a
=25
°C
.
5) V
DD
=100 V, R
G
=50
Ω
, L=79.9 mH, starting T
j
=25
°C
.
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OSG65R260FSF_NB
Enhancement Mode N-Channel Power MOSFET
Electrical Characteristics Diagrams
100
35
V
DS
= 10 V
T
j
= 25 ℃
10 V
30
T
j
= 25 ℃
6.5 V
25
10
6 V
20
15
5.5 V
1
10
5
0
V
GS
= 5 V
0.1
0
2
4
6
8
10
2
4
6
8
10
V
GS
, Gate-source voltage(V)
V
DS
, Drain-source voltage (V)
Figure 1, Typ. output characteristics
Figure 2, Typ. transfer characteristics
10
5
10
4
10
3
10
2
10
1
10
0
10
8
I
D
= 8 A
f
= 100 kHz
V
GS
= 0 V
V
DS
= 400 V
C
iss
6
4
C
oss
C
rss
2
0
0
100
200
300
400
500
600
0
5
10
15
20
25
30
V
DS
, Drain-source voltage (V)
Q
g
, Gate charge(nC)
Figure 3, Typ. capacitances
Figure 4, Typ. gate charge
800
750
700
650
600
0.60
0.50
0.40
0.30
0.20
0.10
I
D
= 250 uA
V
GS
= 0 V
I
D
=7.5 A
V
GS
= 10 V
-50
0
50
100
150
-50
0
50
100
150
T
j
, Junction temperature (℃)
T
j
, Junction Temperature (℃)
Figure 5, Drain-source breakdown voltage
Figure 6, Drain-source on-state resistance
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OSG65R260FSF_NB
Enhancement Mode N-Channel Power MOSFET
4.5
4.0
3.5
3.0
2.5
2.0
1000
T
j
= 25 ℃
I
D
= 250 uA
100
10
1
-50
0
50
100
150
0.5
1.0
1.5
2.0
T
j
, Junction Temperature (℃)
V
SD
, Source-Drain voltage (V)
Figure 7, Threshold voltage
Figure 8, Forward characteristic of body diode
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
16
14
12
10
8
5.5 V
6 V
V
GS
=5 V
6.5 V
10 V
6
4
2
0
0
5
10
15
20
25
30
35
40
45
0
20
40
60
80
100
120
140
I
D
, Drain current(A)
T
C
, Case Temperature (℃)
Figure 9, Drain-source on-state resistance
Figure 10, Drain current
10
1
10
0
100
D= t
p
/T
D= 1
0.5
10
10 μs
0.2
0.1
100 μs
1
0.1
0.05
R
DS(ON)
Limited
1 ms
10
-1
10 ms
0.02
10
-3
0.01
Single Pulse
DC
0.01
10
-2
10
-5
0.1
1
10
100
1000
10
-4
10
-2
10
-1
10
0
10
1
10
2
V
DS
, Drain-source voltage(V)
t
p
Pulse width(s)
Figure 11, Safe operation area T
C
=25
℃
Figure 12, Max. transient thermal impedance
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OSG65R260FSF_NB
Enhancement Mode N-Channel Power MOSFET
Test circuits and waveforms
Figure 1, Gate charge test circuit & waveform
Figure 2, Switching time test circuit & waveforms
Figure 3, Unclamped inductive switching (UIS) test circuit & waveforms
Figure 4, Diode reverse recovery test circuit & waveforms
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OSG65R260FSF_NB
Enhancement Mode N-Channel Power MOSFET
Package Information
Figure1, TO220F_NL package outline dimension
mm
SYMBOL
MIN
NOM
M
A
X
A
b
b1
c
4.30
0.60
0.60
0.45
14.70
4.50
0.70
0.80
0.50
15.00
4.70
0.80
0.90
0.60
15.30
D
2.60 BSC.
D1
e
E
F
9.70
2.50
6.30
13.40
1.00
2.50
2.90
10.00
2.70
6.50
13.60
1.10
2.60
10.30
2.90
6.70
13.80
1.20
2.70
3.10
G
L
L1
Q
Q1
3.00
Q2
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OSG65R260FSF_NB
Enhancement Mode N-Channel Power MOSFET
Ordering Information
Package Units/Tube Tubes/Inner
Box Units/Inner
Box
Inner Box/Carton Box
Units/Carton Box
TO220F
50
40
2000
4
8000
Product Information
Product
Package
Pb Free
RoHS
Halogen Free
OSG65R260FSF_NB
TO220F
yes
yes
yes
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