ORIENTAL-SEMI-OSG80R250FF
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OSG80R250FF
Enhancement Mode N-Channel Power MOSFET
General Description
The GreenMOS
®
high voltage MOSFET utilizes charge balance technology to achieve outstanding
low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide
superior switching performance and robust avalanche capability.
The GreenMOS
®
Generic series is optimized for extreme switching performance to minimize
switching loss. It is tailored for high power density applications to meet the highest efficiency
standards.
Features
Low R
DS(ON)
& FOM
Extremely low switching loss
Excellent stability and uniformity
Applications
PC power
LED lighting
T
e
lecom power
Server power
EV Charger
Solar/UPS
Key Performance Parameters
Parameter
Value
800
51
Unit
V
V
DS
I
D, pulse
A
R
DS(ON) , max
@ V
GS
=10V
Q
g
250
41.2
mΩ
nC
Marking Information
Product Name
Package
Marking
OSG80R250FF
TO220F
OSG80R250F
Package & Pin Information
Page.
1
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OSG80R250FF
Enhancement Mode N-Channel Power MOSFET
Absolute Maximum Ratings
at T
j
=25
°C
unless otherwise noted
Parameter
Symbol
Value
800
±3 0
17
Unit
V
Drain-source voltage
Gate-source voltage
V
DS
V
GS
V
Continuous drain current
1)
, T
C
=25 °C
Continuous drain current
1)
, T
C
=100 °C
Pulsed drain current
2)
, T
C
=25 °C
I
D
A
10.8
51
I
D, pulse
I
S
I
S, pulse
P
D
A
A
Continuous diode forward current
1)
, T
C
=25 °C
Diode pulsed current
2)
, T
C
=25 °C
17
51
A
Power dissipation
3)
, T
C
=25 °C
34
W
Single pulsed avalanche energy
4)
E
AS
640
50
mJ
V/ns
V/ns
°C
MOSFET dv/dt ruggedness, V
DS
=0…
640 V
Reverse diode dv/dt, V
DS
=0…
640 V, I
SD
≤I
D
Operation and storage temperature
dv/dt
dv/dt
T
stg
, T
j
15
-55 to 150
Thermal Characteristics
Parameter
Symbol
R
θJC
Value
3.68
Unit
°C/W
°C/W
Thermal resistance, junction-case
Thermal resistance, junction-ambient
R
θJA
62.5
Electrical Characteristics
at T
j
=25
°C
unless otherwise specified
Parameter
Symbol
Min.
800
2.9
Typ.
Max.
Unit
V
Test condition
Drain-source
breakdown voltage
Gate threshold
voltage
BV
DSS
V
GS
=0 V, I
D
=250
μ
A
V
GS(th)
3.9
V
V
DS
=V
GS
, I
D
=250
μ
A
0.2
0.25
V
GS
=10 V, I
D
=8.5 A
Drain-source on-
state resistance
R
DS(ON)
Ω
V
GS
=10 V, I
D
=8.5 A,
T
j
=150 °C
0.44
100
-100
10
V
GS
=30 V
Gate-source
leakage current
I
GSS
nA
V
GS
=-30 V
Drain-source
leakage current
I
DSS
μ
A
V
DS
=800 V, V
GS
=0 V
Page.
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OSG80R250FF
Enhancement Mode N-Channel Power MOSFET
Dynamic Characteristics
Parameter
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
Min.
Typ.
2425.4
136.0
3.0
Max.
Unit Test
condition
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
pF
V
GS
=0 V,
pF
pF
ns
ns
ns
ns
V
DS
=50 V,
ƒ=1
00 kHz
32.6
15.9
70.2
6.9
V
GS
=10 V,
V
DS
=400 V,
R
G
=2 Ω,
I
D
=8 A
Turn-off delay time
Fall time
t
d(off)
t
f
Gate Charge Characteristics
Parameter
Symbol
Min.
Typ.
41.2
10.8
12.4
5.4
Max.
Unit Test
condition
Total gate charge
Gate-source charge
Gate-drain charge
Gate plateau voltage
Q
g
nC
V
GS
=10 V,
V
DS
=400 V,
I
D
=8 A
Q
gs
nC
nC
V
Q
gd
V
plateau
Body Diode Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit Test
condition
I
S
=17 A,
V
Diode forward voltage
V
SD
1.3
V
GS
=0 V
Reverse recovery time
t
rr
356.0
5.2
ns
V
R
=400 V
,
I
S
=8 A,
di/dt=100 A/μs
Reverse recovery charge
Peak reverse recovery current
Q
rr
I
rrm
μ
C
28.0
A
Note
1) Calculated
continuous current based on maximum allowable junction temperature.
2) Repetitive
rating; pulse width limited by max. junction temperature.
3) Pd
is based on max. junction temperature, using junction-case thermal resistance.
4) V
DD
=50 V, V
GS
=10 V, L=80 mH, starting T
j
=25 °C.
Page.
3
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OSG80R250FF
Enhancement Mode N-Channel Power MOSFET
Electrical Characteristics Diagrams
20
100
T
j
= 25
℃
V
DS
= 10 V
6 V
5.5 V
T
j
= 25
℃
10 V
10
15
10
5
8 V
1
0.1
5 V
0.01
V
GS
= 4.5 V
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
V
DS
, Drain-source voltage (V)
V
GS
, Gate-source voltage(V)
Figure 1. Typ. output characteristics
Figure 2. Typ. transfer characteristics
100000
10000
1000
100
10.0
7.5
5.0
2.5
0.0
f
= 100 kHz
V
GS
= 0 V
I
D
= 8 A
V
DS
= 400 V
C
iss
C
oss
10
C
rss
1
0
20
40
60
80
100
0
10
20
30
40
50
V
DS
, Drain-source voltage (V)
Q
g
, Gate charge(nC)
Figure 3. Typ. capacitances
Figure 4. Typ. gate charge
0.6
I
D
= 8.5 A
I
D
= 250 μA
920
880
840
800
760
720
V
GS
= 10 V
0.5
0.4
0.3
0.2
0.1
0.0
V
GS
= 0 V
-50
0
50
100
150
-50
0
50
100
150
T
j
, Junction temperature (
℃
)
T
j
, Junction Temperature (
℃
)
Figure 5. Drain-source breakdown voltage
Figure 6. Drain-source on-state resistance
Page.
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OSG80R250FF
Enhancement Mode N-Channel Power MOSFET
4.5
4.0
3.5
3.0
2.5
2.0
100
I
D
= 250 μA
T
j
= 25
℃
10
1
-50
0
50
100
150
0.4
0.5
0.6
0.7
0.8
0.9
1.0
T
j
, Junction Temperature (
℃
)
V
SD
, Source-Drain voltage (V)
Figure 7. Threshold voltage
Figure 8. Forward characteristic of body diode
0.30
0.25
0.20
0.15
20
15
10
5
V
GS
=7 V
V
GS
=10 V
0
2
4
6
8
10
12
14
16
18
20
0
20
40
60
80
100
120
140
I
D
, Drain current(A)
T
C
, Case Temperature (
℃
)
Figure 9. Drain-source on-state resistance
Figure 10. Drain current
100
10
10 μs
R
DS(ON)
Limited
100 μs
1
1 ms
10 ms
0.1
DC
0.01
1
10
100
1000
V
DS
, Drain-source voltage(V)
Figure 11. Safe operation area T
C
=25 °C
Page.
5
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OSG80R250FF
Enhancement Mode N-Channel Power MOSFET
Test circuits and waveforms
Figure 1. Gate charge test circuit & waveform
Figure 2. Switching time test circuit & waveforms
Figure 3. Unclamped inductive switching (UIS) test circuit & waveforms
Figure 4. Diode reverse recovery test circuit & waveforms
Page.
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OSG80R250FF
Enhancement Mode N-Channel Power MOSFET
Package Information
E
A
A1
φP
φP3
A2
C1
b1
G3
A4
b2
C
e
mm
Symbol
Min
9.96
4.50
2.34
0.30
2.56
0.40
1.20
15.57
Nom
10.16
4.70
Max
10.36
4.90
2.74
0.60
2.96
0.65
1.35
16.17
E
A
A1
A2
A4
c
2.54
0.45
2.76
0.50
C1
D
1.30
15.87
6.70REF
2.54BSC
12.98
3.03
H1
e
L
12.68
2.88
3.03
3.15
3.15
1.25
1.18
0.70
13.28
3.18
3.38
3.65
3.45
1.55
1.43
0.95
L1
ΦP
ΦP3
F3
G3
b1
b2
3.18
3.45
3.30
1.35
1.28
0.80
Version 1: TO220F-P package outline dimension
Page.
7
Oriental Semiconductor © Copyright Reserved V2.0
OSG80R250FF
Enhancement Mode N-Channel Power MOSFET
Ordering Information
Package
Type
Units/
Tube
Tubes/
Inner Box
Units/
Inner Box
Inner Boxes/
Carton Box
Units/
Carton Box
TO220F-P
50
20
1000
6
6000
Product Information
Product
Package
TO220F
Pb Free
yes
RoHS
Halogen Free
OSG80R250FF
yes
yes
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Oriental
Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including
without limitation, warranties of non-infringement of intellectual property rights of any third
party.
For further information on technology, delivery terms and conditions and prices, please
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