ORIENTAL-SEMI-SFS06R06PF
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SFS06R06PF
Enhancement Mode N-Channel Power MOSFET
General Description
FSMOS
®
MOSFET is based on Oriental Semiconductor’s unique device design to achieve
low
R
DS(ON)
, low gate charge, fast switching and excellent avalanche characteristics. The low V
th
series
is specially designed to use in synchronous rectification power systems with low driving voltage.
Features
Low R
DS(ON)
& FOM
Extremely low switching loss
Excellent reliability and uniformity
Fast switching and soft recovery
Applications
PD charger
Motor driver
Switching voltage regulator
DC-DC convertor
Switched mode power supply
Key Performance Parameters
Parameter
V
DS, min
@ T
j(max)
I
D, pulse
Value
60
Unit
V
210
6
A
R
DS(ON) max
@ V
GS
=10V
Q
g
mΩ
nC
30
Marking Information
Product Name
Package
Marking
SFS06R06PF
TO220
SFS06R06P
Package & Pin information
Page.1
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SFS06R06PF
Enhancement Mode N-Channel Power MOSFET
Absolute Maximum Ratings
at T
j
=25°C unless otherwise noted
Parameter
Symbol
Value
60
Unit
V
Drain source voltage
V
DS
Gate source voltage
V
GS
±20
V
Continuous drain current
1)
, T
C
=25 °C
Pulsed drain current
2)
, T
C
=25 °C
Continuous diode forward current
1)
, T
C
=25 °C
Diode pulsed current
2)
, T
C
=25 °C
Power dissipation
3)
, T
C
=25 °C
I
D
70
A
I
D, pulse
I
S
I
S, Pulse
P
D
210
A
70
A
210
A
87
W
mJ
°C
Single pulsed avalanche energy
5)
E
AS
66
Operation and storage temperature
-55 to 150
T
stg
，
T
j
Thermal Characteristics
Parameter
Symbol
Value
Unit
Thermal resistance, junction-case
R
θJC
R
θJA
1.44
62
°C/W
°C/W
Thermal resistance, junction-ambient
4)
Electrical Characteristics
at T
j
=25°C unless otherwise specified
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test condition
Drain-source
BV
DSS
60
V
V
GS
=0 V, I
D
=250
μ
A
V
DS
=V
GS
, I
D
=250
μ
A
V
GS
=10 V, I
D
=20 A
V
GS
=4.5 V, I
D
=10 A
breakdown voltage
Gate threshold
voltage
Drain-source
on-state resistance
V
GS(th)
1.0
2.5
6
V
R
DS(ON)
R
DS(ON)
4.7
6.4
mΩ
mΩ
Drain-source
on-state resistance
10
100
-100
1
V
GS
=20 V
Gate-source
leakage current
I
GSS
nA
V
GS
=-20 V
Drain-source
leakage current
I
DSS
R
G
μ
A
V
DS
=60 V, V
GS
=0 V
Gate resistance
2.8
Ω
ƒ=1 MHz, Open drain
Page.2
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SFS06R06PF
Enhancement Mode N-Channel Power MOSFET
Dynamic Characteristics
Parameter
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
Min.
Typ.
2136
332
Max.
Unit Test
condition
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
pF
V
GS
=0 V,
pF
pF
ns
ns
ns
ns
V
DS
=50 V,
ƒ=100
kHz
10.6
22.9
6.5
V
GS
=10 V,
V
DS
=50 V,
R
G
=2 Ω,
I
D
=25 A
Turn-off delay time
Fall time
t
d(off)
t
f
45.7
20.4
Gate Charge Characteristics
Parameter
Symbol
Min.
Typ.
30
Max.
Unit Test
condition
Total gate charge
Gate-source charge
Gate-drain charge
Gate plateau voltage
Q
g
nC
V
GS
=10 V,
V
DS
=50 V,
I
D
=25 A
Q
gs
5.8
6.1
3.6
nC
nC
V
Q
gd
V
plateau
Body Diode Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit Test
condition
I
S
=20 A,
V
Diode forward voltage
V
SD
1.3
V
GS
=0 V
Reverse recovery time
t
rr
50.3
45.1
1.5
ns
V
R
=50 V,
I
S
=25 A,
di/dt=100 A/μs
Reverse recovery charge
Peak reverse recovery current
Q
rr
I
rrm
nC
A
Note
1) Calculated
continuous current based on maximum allowable junction temperature.
2) Repetitive
rating; pulse width limited by max. junction temperature.
3) Pd
is based on max. junction temperature, using junction-case thermal resistance.
4) The
value of R
θJA
is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper,
in a still air environment with T
a
=25 °C.
5) V
DD
=30 V,V
GS
=10 V, L=0.3 mH, starting T
j
=25 °C.
Page.3
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SFS06R06PF
Enhancement Mode N-Channel Power MOSFET
Electrical Characteristics Diagrams
1000
350
V
DS
= 10 V
T
j
= 25 ℃
T
j
= 25 ℃
V
GS
= 10 V
300
250
200
150
100
50
100
10
1
V
GS
= 6 V
V
GS
= 5.5 V
V
GS
=5 V
V
GS
= 4.5 V
V
GS
= 4 V
V
GS
= 3.5 V
8
0
0.1
0
2
4
6
10
2
4
6
8
10
V
GS
, Gate-source voltage(V)
V
DS
, Drain-source voltage (V)
Figure 1. Typ. output characteristics
Figure 2. Typ. transfer characteristics
10
4
10
3
10
2
10
1
10
0
10
8
I
D
= 25 A
V
DS
= 50 V
C
iss
C
oss
6
4
C
rss
2
f
= 100 kHz
V
GS
= 0 V
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
V
DS
, Drain-source voltage (V)
Q
g
, Gate charge(nC)
Figure 3. Typ. capacitances
Figure 4. Typ. gate charge
74
72
70
68
66
64
9.0m
8.0m
7.0m
6.0m
5.0m
4.0m
3.0m
2.0m
I
D
= 250 μA
I
D
=20 A
V
GS
= 0 V
V
GS
= 10 V
-50
0
50
100
150
-50
0
50
100
150
T
j
, Junction temperature (℃)
T
j
, Junction Temperature (℃)
Figure 5. Drain-source breakdown voltage
Figure 6. Drain-source on-state resistance
Page.4
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SFS06R06PF
Enhancement Mode N-Channel Power MOSFET
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
T
j
= 25 ℃
I
D
= 250 μA
100
10
1
0.1
-50
0
50
100
150
0.5
1.0
1.5
2.0
V
SD
, Source-Drain voltage (V)
T
j
, Junction Temperature (℃)
Figure 7. Threshold voltage
Figure 8. Forward characteristic of body diode
30.0m
25.0m
20.0m
15.0m
10.0m
5.0m
80
70
60
50
40
30
20
10
0
6.5 V
7 V
10 V
V
GS
=4 V
5.5 V
4.5 V
5 V
6 V
0.0
50
100
150
200
250
300
350
0
20
40
60
80
100
120
140
I
D
, Drain current(A)
T
C
, Case Temperature (℃)
Figure 9. Drain-source on-state resistance
Figure 10. Drain current
10
1
1000
100
10
D= t
p
/T
D= 1
0.5
10 μs
10
0
10
-1
10
-2
100 μs
0.2
R
DS(ON)
Limited
0.1
0.05
1 ms
10 ms
DC
1
0.02
0.01
Single Pulse
10
-4
0.1
10
-5
10
-3
10
-2
10
-1
10
0
0.1
1
10
100
V
DS
, Drain-source voltage(V)
t
p
Pulse width(s)
Figure 11. Safe operation area T
C
=25 °C
Figure 12. Max. transient thermal impedance
Page.5
Oriental Semiconductor © Copyright Reserved V2.0
SFS06R06PF
Enhancement Mode N-Channel Power MOSFET
Test circuits and waveforms
Figure 1. Gate charge test circuit & waveform
Figure 2. Switching time test circuit & waveforms
Figure 3. Unclamped inductive switching (UIS) test circuit & waveforms
Figure 4. Diode reverse recovery test circuit & waveforms
Page.6
Oriental Semiconductor © Copyright Reserved V2.0
SFS06R06PF
Enhancement Mode N-Channel Power MOSFET
Package Information
A
E
(E)
A1
P
Φ
θ1
θ1
E1
θ1
b1
A2
b
e
e1
C
θ1
(E)
mm
Symbol
Min
Nom
4.50
1.30
2.40
–
Max
4.60
1.33
2.50
0.90
1.40
0.60
16.10
9.30
13.70
10.20
8.20
A
A1
A2
b
b1
c
4.40
1.27
2.30
0.70
1.27
0.45
15.30
9.10
13.10
9.70
7.80
–
0.50
15.70
9.20
–
9.90
8.00
2.54 BSC
5.08 BSC
6.50
13.08
–
D
D1
D2
E
E1
e
e1
H1
L
L1
L2
ΦP
Q
6.30
12.78
–
6.70
13.38
3.50
4.60 REF
3.60
–
3.55
2.73
1
˚
3.65
2.87
5˚
θ
1
3˚
Version 1: TO220-J package outline dimension
Page.7
Oriental Semiconductor © Copyright Reserved V2.0
SFS06R06PF
Enhancement Mode N-Channel Power MOSFET
Ordering Information
Package
Type
Units/
Tube
Tubes /
Inner Box
Units/
Inner Box
Inner Boxes/
Carton Box
Units/
Carton Box
TO220-J
50
20
1000
5
5000
Product Information
Product
Package
TO220
Pb Free
yes
RoHS
Halogen Free
SFS06R06PF
yes
yes
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any
typical values stated herein and/or any information regarding the application of the device,
Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
For further information on technology, delivery terms and conditions and prices, please
© Oriental Semiconductor Co.,Ltd. All Rights Reserved
Page.8
Oriental Semiconductor © Copyright Reserved V2.0
