ORIENTAL-SEMI-SFS08R08DF
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SFS08R08DF
Enhancement Mode N-Channel Power MOSFET
General Description
FSMOS
®
MOSFET is based on Oriental Semiconductor’s unique device design to achieve low
R
DS(ON)
, low gate charge, fast switching and excellent avalanche characteristics. The low V
th
series
is specially optimized for synchronous rectification systems with low driving voltage.
Features
Low R
DS(ON)
& FOM
Extremely low switching loss
Excellent reliability and uniformity
Fast switching and soft recovery
Applications
PD charger
Motor driver
Switching voltage regulator
DC-DC convertor
Switched mode power supply
Key Performance Parameters
Parameter
V
DS, min
@ T
j(max)
I
D, pulse
Value
80
Unit
V
192
8
A
R
DS(ON) max
@ V
GS
=10V
Q
g
mΩ
nC
28.9
Marking Information
Product Name
Package
Marking
SFS08R08DF
TO252
SFS08R08D
Package & Pin information
Page.1
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SFS08R08DF
Enhancement Mode N-Channel Power MOSFET
Absolute Maximum Ratings
at T
j
=25°C unless otherwise noted
Parameter
Symbol
Value
80
Unit
V
Drain source voltage
V
DS
Gate source voltage
V
GS
±20
V
Continuous drain current
1)
, T
C
=25 °C
Pulsed drain current
2)
, T
C
=25 °C
Continuous diode forward current
1)
, T
C
=25 °C
Diode pulsed current
2)
, T
C
=25 °C
Power dissipation
3)
, T
C
=25 °C
I
D
64
A
I
D, pulse
I
S
I
S, Pulse
P
D
192
A
64
A
192
A
87
W
mJ
°C
Single pulsed avalanche energy
5)
E
AS
25
Operation and storage temperature
-55 to 175
T
stg
，
T
j
Thermal Characteristics
Parameter
Symbol
Value
Unit
Thermal resistance, junction-case
R
θJC
R
θJA
1.72
62
°C/W
°C/W
Thermal resistance, junction-ambient
4)
Electrical Characteristics
at T
j
=25°C unless otherwise specified
Parameter
Symbol
Min.
Typ.
Max.
Unit
V
Test condition
V
GS
=0 V, I
D
=250
μ
A
V
DS
=V
GS
, I
D
=250
μ
A
V
GS
=10 V, I
D
=12 A
Drain-source
BV
DSS
80
breakdown voltage
Gate threshold
voltage
Drain-source
on-state resistance
V
GS(th)
1.0
2.5
8
V
R
DS(ON)
R
DS(ON)
6.2
7.8
mΩ
mΩ
Drain-source
on-state resistance
10
V
GS
=4.5 V, I
D
=9 A
V
GS
=20 V
100
-100
Gate-source
leakage current
I
GSS
nA
V
GS
=-20 V
Drain-source
leakage current
I
DSS
R
G
1
μ
A
V
DS
=80 V, V
GS
=0 V
Gate resistance
3.3
Ω
ƒ=1 MHz, Open drain
Page.2
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SFS08R08DF
Enhancement Mode N-Channel Power MOSFET
Dynamic Characteristics
Parameter
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
Min.
Typ.
2028
717
53.9
22.2
6.3
Max.
Unit Test
condition
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
pF
V
GS
=0 V,
pF
pF
ns
ns
ns
ns
V
DS
=25 V,
ƒ=100
kHz
V
GS
=10 V,
V
DS
=50 V,
R
G
=2.5
Ω,
I
D
=25 A
Turn-off delay time
Fall time
t
d(off)
t
f
47.5
8.8
Gate Charge Characteristics
Parameter
Symbol
Min.
Typ.
28.9
5.4
Max.
Unit Test
condition
Total gate charge
Gate-source charge
Gate-drain charge
Gate plateau voltage
Q
g
nC
V
GS
=10 V,
V
DS
=50 V,
I
D
=25 A
Q
gs
nC
nC
V
Q
gd
4.9
V
plateau
3.5
Body Diode Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit Test
condition
I
S
=12 A,
V
Diode forward voltage
V
SD
1.3
V
GS
=0 V
Reverse recovery time
t
rr
51.3
60.6
2
ns
V
R
=50 V,
I
S
=25 A,
di/dt=100 A/μs
Reverse recovery charge
Peak reverse recovery current
Q
rr
I
rrm
nC
A
Note
1) Calculated
continuous current based on maximum allowable junction temperature.
2) Repetitive
rating; pulse width limited by max. junction temperature.
3) Pd
is based on max. junction temperature, using junction-case thermal resistance.
4) The
value of R
θJA
is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper,
in a still air environment with T
a
=25 °C.
5) V
DD
=50 V,V
GS
=10 V, L=0.3 mH, starting T
j
=25 °C.
Page.3
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SFS08R08DF
Enhancement Mode N-Channel Power MOSFET
Electrical Characteristics Diagrams
250
1000
10 V
7 V
V
DS
= 10 V
T
j
= 25 ℃
200
5.5 V
100
10
1
T
j
= 25 ℃
5 V
150
4.5 V
100
4 V
V
GS
= 3.5 V
50
0
0.1
0
2
4
6
8
10
0
2
4
6
8
10
V
DS
, Drain-source voltage (V)
V
GS
, Gate-source voltage(V)
Figure 1. Typ. output characteristics
Figure 2. Typ. transfer characteristics
10
4
10
8
f
= 100 kHz
V
GS
= 0 V
I
D
= 25 A
V
DS
= 50 V
C
iss
10
3
10
2
10
1
10
0
C
oss
6
4
C
rss
2
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
V
DS
, Drain-source voltage (V)
Q
g
, Gate charge(nC)
Figure 3. Typ. capacitances
Figure 4. Typ. gate charge
100
15.0m
12.0m
9.0m
6.0m
3.0m
I
D
= 250 μA
I
D
= 12 A
V
GS
= 0 V
V
GS
= 10 V
95
90
85
80
-50
0
50
100
150
200
-50
0
50
100
150
200
T
j
, Junction temperature (℃)
T
j
, Junction temperature (℃)
Figure 5. Drain-source breakdown voltage
Figure 6. Drain-source on-state resistance
Page.4
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SFS08R08DF
Enhancement Mode N-Channel Power MOSFET
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
100
I
D
= 250 μA
T
j
= 25 ℃
10
1
-50
0
50
100
150
200
0.5
1.0
1.5
2.0
T
j
, Junction temperature (℃)
V
SD
, Source-drain voltage (V)
Figure 7. Threshold voltage
Figure 8. Forward characteristic of body diode
50m
45m
40m
35m
30m
25m
20m
15m
10m
5m
70
60
50
40
30
20
10
0
5 V
6 V
4.5 V
V
GS
=4 V
7.5 V
10 V
50
100
150
200
250
300
350
0
25
50
75
100
125
150
175
I
D
, Drain current(A)
T
C
, Case temperature (℃)
Figure 9. Drain-source on-state resistance
Figure 10. Drain current
10
1
10
0
D= t
p
/T
100
10
1
10 μs
D= 1
0.5
100 μs
R
DS(ON)
Limited
0.2
0.1
1 ms
10
-1
0.05
10 ms
DC
0.02
0.01
Single Pulse
10
-4
10
-2
10
-5
0.1
10
-3
10
-2
10
-1
10
0
0.1
1
10
100
V
DS
, Drain-source voltage(V)
t
p
Pulse width(s)
Figure 11. Safe operation area T
C
=25 °C
Figure 12. Max transient thermal impedance
Page.5
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SFS08R08DF
Enhancement Mode N-Channel Power MOSFET
Test circuits and waveforms
Figure 1. Gate charge test circuit & waveform
Figure 2. Switching time test circuit & waveforms
Figure 3. Unclamped inductive switching (UIS) test circuit & waveforms
Figure 4. Diode reverse recovery test circuit & waveforms
Page.6
Oriental Semiconductor © Copyright Reserved V2.0
SFS08R08DF
Enhancement Mode N-Channel Power MOSFET
Package Information
E
c2
b3
θ1
To
Φ
p
1
E-MARK
.30
±0.1
E1
A2
θ1
θ1
b2
e
b
θ
2
C
θ
C
L
(L1)
mm
Nom
2.30
–
1.01
–
0.76
–
5.33
–
0.51
–
6.10
–
6.60
–
2.286
10.10
1.50
Symbol
Min
Max
A
A1
A2
b
b1
b2
b3
c
c1
c2
D
D1
E
2.20
0.00
0.90
0.72
0.71
0.72
5.13
0.47
0.46
0.47
6.00
5.25
6.50
4.70
2.186
9.80
1.40
2.38
0.10
1.10
0.85
0.81
0.90
5.46
0.60
0.56
0.60
6.20
–
6.70
–
2.386
10.40
1.70
E1
e
H
L
L1
L2
L3
L4
L5
L6
θ
2.90 REF
0.508 BSC
0.90
0.60
0.15
–
1.25
1.00
0.75
0.80
–
1.80 REF
0
˚
5˚
5˚
–
7˚
7˚
8˚
9˚
9˚
θ1
θ2
Version 1:
TO252-J package outline dimension
Page.7
Oriental Semiconductor © Copyright Reserved V2.0
SFS08R08DF
Enhancement Mode N-Channel Power MOSFET
Ordering Information
Package
Type
Units/
Reel
Reels /
Inner Box
Units/
Inner Box
Inner Boxes/
Carton Box
Units/
Carton Box
TO252-J
2500
2
5000
5
25000
Product Information
Product
Package
TO252
Pb Free
yes
RoHS
Halogen Free
SFS08R08DF
yes
yes
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any
typical values stated herein and/or any information regarding the application of the device,
Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
For further information on technology, delivery terms and conditions and prices, please
© Oriental Semiconductor Co.,Ltd. All Rights Reserved
Page.8
Oriental Semiconductor © Copyright Reserved V2.0
