PAKER-BSS138K

N-Channel Enhancement Mode Power MOSFET  

BSS138K  

SO

T

–

23  

Features  

•

Low R

DS(on)

@V

GS

=10V  

•

3.3V Logic Level Control  

•

N Channel SOT23 Package  

• Pb−Free, RoHS Compliant  

3

2

Applications  

1

•

LED Lighting Application,  

•

ON/OFF switch  

•

Networking  

J1.Y.  

MARKING:  

Summary of Packing Options  

Package  

Packing Description  

Packing Quantity  

3000  

Industry Standard  

EIA-481-1  

Tape/Reel,7″ reel  

SOT-23  

Maximum Ratings & Thermal Characteristics  

(

Ratings at 25

ć

ambient temperature unless otherwise specified.)  

Parameter  

Rating  

Unit  

Symbol  

Gate-Source Voltage  

±12  

50  

V

V

V

GS  

Drain-Source Breakdown Voltage  

Maximum Junction Temperature  

Storage Temperature Range  

Pul

se Drain Current Tested①  

V

T

J  

(BR)DSS  

150  

°C  

°C  

A

-50 to 150  

1.8  

T

STG  

I

DM  

T

A

=25°C  

T

A

=25°C  

T

A

=70°C  

T

A

=25°C  

T

A

=70°C  

0.5  

Continuous Drain Current  

A

I

D

0.4  

0.3  

Maximum Power Dissipation  

W

P

D  

0.2  

Thermal Resistance Junction-Ambient  

400  

°C/W  

R



JA  

Notes:

①

 

Pulse width limited by maximum allowable junction temperature  

Electrical Characteristics  

(

Ratings at 25

ć

ambient temperature unless otherwise specified).  

Parameter  

Condition  

Min  

Max  

Symbol  

Typ  

Unit  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current(T

A

=25

℃

)  

Zero Gate Voltage Drain Current(T

A

=125

℃

)  

Gate-Body Leakage Current  

V

GS

=0V I

D

=250μA  

V

DS

=50V, V

GS

=0V  

V

DS

=40V, V

GS

=0V  

V

GS

=±12V, V

DS

=0V  

V

DS

=V

GS

, I

D

=250μA  

V

GS

=10V, I

D

=0.5A  

V

GS

=4.5V, I

D

=0.3A  

V

GS

=3.3V, I

D

=0.2A  

50  

—  

—  

1

—  

—  

V

μA  

uA  

nA  

V

V

(BR)DSS  

I

DSS  

—  

100  

±100  

1.5  

2

—  

—  

—  

I

V

GSS  

GS(TH)  

Gate Threshold Voltage  

0.6  

—  

1.0  

1.0  

1.2  

1.6  

Ω

—  

2.5  

4

Dra

in-Source On-State Resistance②  

Pulse test ; Pulse width



300



s, duty cycle



2%.  

Ω

R

DS(ON)  

—  

Ω

②

Notes:  

Page 1 of 3  

Rev 1: Feb 2018  

派克微电子（深圳）有限公司  

N-Channel Enhancement Mode Power MOSFET  

BSS138K  

Electrical Characteristics  

(

Ratings at 25

ć

ambient temperature unless otherwise specified).  

Parameter  

Condition  

Min  

Max  

Symbol  

Typ  

Unit  

Dynamic Electrical Characteristics  

Input Capacitance  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

23  

3.8  

pF  

pF  

pF  

nC  

nC  

nC  

C

C

C

Q

Q

Q

iss  

V

DS

=30V, V

GS

=0V,  

f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

oss  

rss  

1.5  

0.91  

0.18  

0.3  

g

V

DS

=30V I

D

=0.5A,  

V

GS

=10V  

Gate Source Charge  

Gate Drain Charge  

gs  

gd  

Switching Characteristics  

Turn on Delay Time  

—  

—  

—  

—  

—  

—  

—  

—  

6

ns  

ns  

ns  

ns  

t

t

t

t

d(on)  

Turn on Rise Time  

Turn Off Delay Time  

Turn Off Fall Time  

3.5  

20  

5.9  

r

V

DD

=30V, I

D

=0.3A,  

R

G

=3.3Ω, V

GS

=10V  

d(off)  

f

Source Drain Diode Characteristics  

Source drain current(Body Diode)  

T

A

=25℃  

—  

—  

0.2  

1.2  

—  

A

V

I

SD  

T

j

=25

℃

, I

SD

=0.5A,  

V

GS

=0V  

For

ward on voltage

②  

0.78  

V

SD  

Ratings and Characteristic Curves  

V

DS

, Drain -Source Voltage (V)  

Tj – Junction

T

emperature (°C)  

Fig1.

Typical Output Characteristics  

Fig2.

Normalized Threshold Voltage Vs.

T

emperature  

V

GS

, Gate -Source Voltage (V)  

V

GS

, Gate -Source Voltage (V)  

Fig4.

Drain -Source Voltage vs Gate -Source Voltage  

Fig3.

Typical Transfer Characteristics  

Page 2 of 3  

Rev 1: Feb 2018  

派克微电子（深圳）有限公司  

N-Channel Enhancement Mode Power MOSFET  

BSS138K  

V

SD

, Source-Drain Voltage (V)  

V

DS

, Drain -Source Voltage (V)  

Fig5.

Typical Source-Drain Diode Forward Voltage  

Fig6.

Maximum Safe Operating Area  

V

DS

, Drain-Source Voltage (V)  

Qg,

T

o

tal Gate Charge (nC)  

Fig7.

Typical Capacitance Vs. Drain-Source Voltage  

Fig8.

Typical Gate Charge Vs. Gate-Source Voltage  

Package Outline Dimensions: SOT-23  

DIMENSIONS  

D

MILLIMETER  

INCHES  

MAX  

SYMBOL  

3

MIN  

MAX  

MIN  

A

A1  

A2  

D

0.900  

1.150  

0.100  

1.050  

3.000  

0.500  

2.550  

1.400  

0.035  

0.045  

0.004  

0.041  

0.118  

0.020  

0.100  

0.055  

E1 E  

0.000  

0.900  

2.800  

0.300  

2.250  

1.200  

0.000  

0.035  

0.110  

0.012  

0.089  

0.047  

1

2

e

b

E

250.  

θ

L

E1  

e

0.950 BSC  

0.037 BSC  

L

0.300  

0

0.500  

8

○  

0.012  

0

0.020  

8

○  

A

A2  

θ

A1  

Page 3 of 3  

Rev 1: Feb 2018  

派克微电子（深圳）有限公司