PANASONIC-UP0338300L
| Part # | PANASONIC-UP0338300L |
Download  | PANASONIC-UP0338300L |
This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
UP03383
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
Unit: mm
For digital circuits
(0.30)
0.20
–
+
0
0
.
.
0
0
2
5
0.10
0.02
5
4
3
■
Features
•
Two elements incorporated into one package
(Transistors with built-in resistor)
1
.50)
•
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
•
UNR2213
+
UNR211F
splay
1 lead
5˚
■
Absolute Maximum Ratings
T
=
25
°
Parameter
ymbol
Rating
U
it
Tr1
Collector-base voltage
(Emitter open)
V
O
5
V
1: Emitter (Tr1)
2:
ase (Tr1)
3: Emitter (Tr2)
4: Collector (Tr2)
5: Collector (Tr1)
Base (Tr2)
Collector-emit
volta
(Base open)
CEO
V
SSMini5-F2 Package
Collector curren
I
C
10
mA
V
Marking Symbol: DV
Tr2
Coll
ctor-
ase voltage
(Emitte
open
V
−
50
Internal Connection
Co
tor-emitter voltage
(
pen)
−
50
V
5
4
C
ctor current
C
P
T
T
j
−
100
125
mA
mW
°
C
R
Tr1
Tr2
Ove
all Total
power d
ssipation
Junction te
perature
R
2
R
1
R
2
125
mper
ture
T
stg
−
55 to
+
125
°
C
1
2
3
Publication date: December 2003
SJJ00255BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP03383
■
Electrical Characteristics
T
a
=
25
°
C 3
°
C
•
Tr1
Parameter
Symbol
V
CBO
V
CEO
I
CBO
Conditions
I
C
=
10
µ
A, I
E
=
0
Min
50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5
50
V
0.1
0.5
0.1
µ
A
µ
A
mA
I
CEO
I
EBO
h
FE
80
V
CE(sat)
I
C
=
10 mA,
B
=
0.3 mA
0.25
V
V
OH
V
OL
R
1
V
CC
=
5 V, V
=
0.5 V
R
L
=
1 k
Ω
9
V
Output voltage low-level
V
CC
=
5 V,
=
3.5 V, R
L
=
1 k
Ω
0.2
+
30%
1.2
V
Input resistance
−
30%
47
1.0
150
k
Ω
Resistance ratio
R
1
/ R
f
0.8
Transition frequency
10 V, I
E
= −
2 mA, f
200 MHz
MHz
Note) Measuring methods are based on J
PANES
INDUSTRIAL S
AND
RD J
S C 7030 measuring methods for transistors.
•
Tr2
Parameter
Symbol
V
CBO
V
CEO
I
CBO
Conditions
I
C
=
10
µ
A
I
E
=
0
Min
−
50
−
50
Typ
Max
Unit
V
Collector-base voltage (Em
tter o
n)
Collector-emitter vo
age (Base open)
Collector-base cutoff
rrent (Em
ter open)
Collector-emitter c
off cu
rent (Base open)
Emitter-
ase cu
f curr
nt (Collector open)
o
ward cu
ansfer ratio
C
llec
or-em
r saturation volta
e
Output vol
age high-lev
I
C
= −
2 mA, I
B
=
0
V
V
CB
=
50 V, I
E
=
0
E
= −
50 V, I
B
=
0
V
EB
= −
6 V, I
C
=
0
V
CE
= −
10 V, I
C
= −
5 mA
−
0.1
−
0.5
−
1.0
µ
A
µ
A
mA
h
FE
30
CE(sat)
I
C
= −
10 mA, I
= −
0.3 mA
−
0.25
V
V
OH
V
OL
R
1
V
CC
= −
5 V, V
B
= −
0.5 V, R
L
=
1 k
Ω
−
4.9
−
30%
V
Outpu
voltage low-le
el
V
CC
= −
5 V, V
B
= −
2.5 V, R
L
=
1 k
Ω
−
0.2
V
I
put re
4.7
0.47
80
+
30%
k
Ω
Resistan
R
1
/ R
2
f
T
Transition fre
V
CB
= −
10 V, I
E
=
1 mA, f
=
200 MHz
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
150
125
100
75
50
25
0
0
40
80
120
160
(
)
Ambient temperature
T
a
°
C
SJJ00255BED
2
This product complies with the RoHS Directive (EU 2002/95/EC).
UP03383
Characteristics charts of Tr1
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
10
320
240
160
I
C
/ I
B
=
10
T
a
=
25
°
C
I
B
=
1.0 mA
V
CE
=
10 V
T
a
=
75
°
C
0.9 mA
0.8 mA
120
80
40
0
0.7 mA
0.6 mA
0.5 mA
25
°
C
1
0.4 mA
0.3 mA
−
25
°
C
0.2 mA
0.1 mA
0.1
T
a
=
75
°
C
−
2
C
25
°
0.01
1
0
0.1
0
2
4
6
8
10
12
1
10
1
10
100
1
0
00
Collector-emitter voltage
V
CE
(V)
lector current
I
C
(m
)
Collector current
I
C
(mA)
C
ob
V
CB
I
O
V
I
V
IN
I
O
10
100
1
100
10
1
V
=
5 V
T
a
=
25
°
C
V
O
=
0.2 V
T
a
=
25
°
C
f
=
1
T
a
=
1
0.
0.1
0.1
0
4
8
12
0
20
3
40
1
10
100
ltage V
CB
(V)
Input voltage
V
IN
(V)
Output current
I
O
(mA)
SJJ00255BED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UP03383
Characteristics charts of Tr2
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
−
1
−
200
−
160
−
120
T
a
=
25
°
C
I
B
= −
1.0 mA
I
C
/ I
B
=
10
V
CE
= −
10 V
T
a
=
75
°
C
−
120
−
80
−
40
0
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
25
°
C
−
25
°
C
−
0.5 mA
−
0.4 mA
T
a
=
75
°
C
−
0.1
−
25
°
C
25
°
−
80
0
−
0.3 mA
−
0.2 mA
−
0.1 mA
−
0.01
0
−
2
−
4
−
6
−
8
−
10
−
12
−
1
−
10
−
100
−
1
0
00
1
10
−
100
Collector-emitter voltage
V
CE
(V)
lector current
I
C
(m
)
Collector current
I
C
(mA)
C
ob
V
CB
I
O
V
I
V
IN
I
O
10
−
100
−
10
−
1
−
100
−
0
V
O
= −
0.2 V
T
a
=
25
°
C
V
= −
5 V
T
a
=
25
°
C
f
=
1
T
a
=
1
−
0.1
−
0.
0
−
20
−
30
−
40
−
0.4
−
0.8
−
1.2
−
1.6
−
1
−
10
Output current
I
O
(mA)
−
100
ltage V
CB
(V)
Input voltage
V
IN
V)
SJJ00255BED
4
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic contr
l equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability
equired, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book
re subje
t to change w
notice for modification and/or im-
provement. At the final stage of your design, purchasing
o
use
f the
roducts, ther
for the most up-to-date Product
Standards in advance to make sure that the latest specific
tions sa
isfy your requirements.
(5) When designing your equipment, comply with the r
nge
f absolute maximu
ing
nd the guaranteed operating conditions
(operating power supply voltage and operating
nvir
nt etc.). Especially
ple
e be c
reful not to exceed the range of absolute
maximum rating on the transient state, such as pow
power-off and mode-
witching. Otherwise, we will not be liable for any
defect which may arise later in your equ
pment
Even when the products are used with
the guar
nteed values,
ake
nto t
e co
sideration of incidence of break down and failure
mode, possible to occur to semic
uctor
roducts. Me
sures
the sy
ems such as redundant design, arresting the spread of fire
or preventing glitch are recom
in orde
to prevent p
ysica
injury, fire, social damages, for example, by using the products.
(6) Comply with the instruction
for u
e in
rder to prevent
reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and m
c
anical stress) at the time of handlin
, mounting or at customer’s process. When using products for which
damp-proof packin
is req
red, satisfy the cond
ions, su
h as shelf life and the elapsed time since first opening the packages.
(7) This book may
e no
reprinted or rep
wh
ther wholly or partially, without the prior written permission of Matsushita
Electric
ndu
rial Co., Ltd.
