PANJIT-International-2N7002K-R1-00001
| Part # | PANJIT-International-2N7002K-R1-00001 |
Download  | PANJIT-International-2N7002K-R1-00001 |
2N7002K
60V N-Channel Enhancement Mode MOSFET – ESD Protected
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@500mA=3
Ω
• R
DS(ON)
, V
GS
@4.5V,I
DS
@200mA=4
Ω
0.120(3.04)
0.110(2.80)
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
0.056(1.40)
0.047(1.20)
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
0.008(0.20)
0.003(0.08)
0.079(2.00)
0.070(1.80)
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound
a
s
p
er IEC61249 Std. . (Halogen Free)
0.004(0.10)
0.000(0.00)
0.044(1.10)
0.035(0.90)
MECHANICAL DATA
0.020(0.50)
0.013(0.35)
• Case: SOT-23 Package
•
T
e
rminals: Solderable per MIL-S
T
D
-750,Method 2026
• Marking: K72
• Approx. Weight: 0.0003 ounce, 0.0084 gr
a
m
Maximum RATINGS
and Thermal Characteristics
(T
A
=25
O
C unless
otherwise noted )
PARAMETER
D
r
ain-Source
Voltage
Symbol
V
D
S
Limit
60
Units
V
Gate-Source Voltage
V
G
S
I
D
+20
300
V
C
o
ntinuous
Drain Current
mA
mA
1)
Pulsed Drain Current
I
D
M
2000
T
A
=
25
O
C
T
A
=
75
O
C
350
210
Maximum Power Dissipation
P
D
mW
Operating Junction and Storage
T
e
mperature
T
J
,
T
S
TG
R
θ
J
A
-55 to + 150
357
O
C
Range
Junction-to Ambient Thermal Resistance(PCB mounted)
2
O
C
/W
Note:1.Maximum DC current limited by the p
a
c
kage
2.Surface mounted on FR4 board, t<10 sec
3.Pulse width<300us, Duty cycle<2%
May 13,2015-REV.03
PAGE . 1
2N7002K
ELECTRICALCHARACTERISTICS
Parameter
Static
Symbol
T
e
st Condition
Min.
Ty
p
.
Max.
Units
Drain-Source Breakdown
Voltage
BV
D
SS
V
G
S(th)
R
D
S(on)
R
D
S(on)
I
D
SS
V
G
S
=
0V , I
D
=
10uA
V
D
S
=
V
G
S
, I
D
=
250uA
V
GS
=4.5V , I
D
=200mA
V
GS
=10V , I
D
=500mA
V
DS
=60V , V
GS
=0V
60
–
–
–
–
–
–
–
–
2.5
4.0
3.0
1
V
V
Gate Threshold Voltage
1
Drain-Source On-State
Resistance
–
Ω
Drain-Source On-State
–
Resistance
Zero Gate Voltage Drain
Current
–
–
uA
uA
Gate Body Leakage
Forward
T
ransconductance
Dynamic
I
G
SS
V
G
S
=
+20V , V
D
S
=
0V
V
D
S
=
15V , I
D
=
250mA
+10
–
g
f
S
100
mS
V
D
S
=
15V, I =200mA
V
GS
=
D
5V
T
o
tal Gate Charge
Q
g
–
–
0.8
nC
ns
Turn-On Time
t
o
n
t
o
ff
–
–
–
–
–
–
–
–
–
–
20
40
35
10
5
V
DD
=30V , R
L
=150
Ω
I
D
=200mA , V
GEN
=10V
R
G
=10
Ω
Turn-Off Time
Input Capacitance
C
i
ss
C
o
ss
C
r
ss
V
D
S
=
25V , V
G
S
=
0V
f=1.0MH
Z
Output Capacitance
pF
Reverse
T
ransfer
Capacitance
Source-Drain Diode
Diode Forward Voltage
V
S
D
I
S
I
S
=200mA , V
GS
=0V
–
–
–
0.82
1.3
300
V
Continuous Diode Forward
Current
–
–
–
–
mA
mA
Pulse Diode Forward
I
S
M
2000
Current
V
DD
V
DD
Switching
Gate Charge
Test Circuit
Test Circuit
R
L
R
L
V
IN
V
GS
V
OUT
1mA
R
G
R
G
May 13,2015-REV.03
PAGE . 2
2N7002K
Typical Characteristics Curves (T
A
=25
O
C,unless otherwise noted)
1.2
1
1.2
V
DS
=10V
V
GS
= 10V ~ 6.0V
5.0V
4.0V
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
T
J
=25
3.0V
0
1
2
3
4
5
6
0
1
2
3
4
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
F
I
G
.
1
–
O
u
t
p
u
t
C
h
a
r
a
c
t
e
r
i
s
t
i
c
FIG.2- Transfer Characteristic
5
4
3
2
1
0
5
4
3
I
D
=500mA
V
GS
=4.5V
2
1
0
I
D
=200mA
V
GS
=10V
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
FIG.3- On
Resistance vs Drain Current
FIG.4- On
Resistance vs Gate to Source Voltage
1.8
V
GS
=10V
I
D
=500mA
1.6
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100
125 150
T
J
– Junction Temperature (
o
C)
FIG.5- On
Resistance vs Junction
T
e
mperature
May 13,2015-REV.03
PAGE . 3
2N7002K
10
8
Vgs
V
DS
=
10V
Qg
I
D
=250mA
6
4
2
Qsw
Vgs(th)
0
Qg(th)
Qgs
0
0.2
0.4
0.6
0.8
1
Qgd
Qg
Q
g
– Gate Charge (nC)
Fig.7 – Gate Charge
Fig.6 – Gate Charge Waveform
1.2
88
I
D
=250
m
A
ID = 250
m
A
86
84
82
80
78
76
74
72
1.1
1
0.9
0.8
0.7
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
– Junction
T
e
mperature (
o
C)
T
J
– Junction
T
e
mperature (
C)
Fig.8 – Threshold Voltage vs
T
e
mperature
Fig.9 –
Breakdown Voltage vs Junction
T
e
mperature
70
10
f = 1MHz
V
GS
= 0V
V
GS
= 0V
60
50
40
1
o
T
J
= 125 C
30
-5
5
o
C
Ciss
0.1
20
10
Coss
2
5
o
C
Crss
0.01
0.2
0
0
5
10
15
20
25
0.4
0.6
0.8
1
1.2
1.4
1.6
V
DS
– Drain-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
Fig.10 – Source-Drain Diode Forward Voltage
Fig.11 – Capacitance vs Drain to Source Voltage
May 13,2015-REV.03
PAGE . 4
2N7002K
MOUNTING PAD LAYOUT
0.031 MIN.
(0.80) MIN.
0.037
(0.95)
0.043
(1.10)
0.106
(2.70)
ORDER INFORMATION
• Packing
information
T/R – 12K per 13″ plastic Reel
T/R –
3K per 7″ plastic Reel
May 13,2015-REV.03
PAGE . 5
2N7002K
Part No_packing code_Version
2N7002K_R1_00001
2N7002K_R2_00001
For example :
RB500V-40
_
R2
_
00001
Serial number
Part No.
Version code means HF
Packing size code means 13″
Packing type means T/R
Packing Code
XX
Version Code
XXXXX
Packing type
1
st
Code
Packing size code
2
nd
Code
HF or RoHS
1
st
Code 2
nd
~5
th
Code
Tape and Ammunition Box
(T/B)
A
R
B
T
S
L
F
N/A
7″
0
1
HF
0
1
serial number
serial number
Tape and Reel
(T/R)
RoHS
Bulk Packing
(B/P)
13″
2
Tube Packing
(T/P)
26mm
52mm
X
Y
U
D
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
PANASERT T/B C
A
T
HODE UP
(PBCU)
PANASERT T/B C
A
T
HODE DOWN
(PBCD)
FORMING
May 13,2015-REV.03
PAGE . 6
2N7002K
Disclaimer
Reproducing and modifying information of the document is prohibited without permission
from Panjit International Inc..
•
•
Panjit International Inc. reserves the rights to make changes of the content herein the
document anytime without notification. Please refer to our website for the latest
document.
Panjit International Inc. disclaims any and all liability arising out of the
a
p
plication or use of
any product including d
a
m
ages incidentally and consequentially occurred.
•
•
•
Panjit International Inc. does not
a
s
sume any and all implied warranties, including warranties
of fitness for particular purpose, non-infringement and merchantability.
Applications shown on the herein document are ex
a
m
ples of standard use and operation.
Customers are responsible in comprehending the suit
a
b
le use in particular
a
p
plications.
Panjit International Inc. makes no representation or warranty that such applications will be
suitable for the specified use without further testing or modification.
The products shown herein are not designed and authorized for equipments requiring high
level of reliability or relating to hum
a
n
l
ife and for any applications concerning life-saving
or life-sustaining, such
a
s
m
edical instruments, transportation equipment, aerospace
machinery et cetera. Customers using or selling th
e
s
e products for use in such
a
p
plications
•
•
do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages
resulting from such improper use or sale.
Since Panjit uses lot number as the tracking base, please provide the lot number for tracking
when complaining.
May 13,2015-REV.03
PAGE . 7
