PANJIT-International-2N7002KTB-R1-00001
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2N7002KTB
60V N-Channel Enhancement Mode MOSFET – ESD Protected
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@500mA=3
Ω
• R
DS(ON)
, V
GS
@4.5V,I
DS
@200mA=4
Ω
• Advanced Trench Process
T
echnology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
0.052(1.30)
0.043(1.10)
0.024(0.60)
0.019(0.50)
0.067(1.70)
0.059(1.50)
• L
ead free in compliance with EU RoHS2.0
(2011/65/EU & 2015/865/EU directive)
0.007(0.17)
0.002(0.07)
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: SOT-523 Package
•
T
e
rminals: Solderable per MIL-STD-750,Method 2026
• Approx. Weight: 0.00007 ounces, 0.002 grams
• Marking: 27
0.012(0.30)
0.004(0.10)
Maximum RATINGS
and Thermal Characteristics
(T
A
=25
O
C unless
otherwise noted )
PARAMETER
S
y
mbol
V
D
S
Limit
Units
V
Drain-Source Voltage
Gate-Source Voltage
60
V
G
S
I
D
+20
115
800
V
mA
Continuous Drain Current
1)
Pulsed Drain Current
I
D
M
mA
T
A
=
25
O
C
T
A
=
75
O
C
200
150
Maximum Power Dissipation
P
D
mW
O
C
Operating Junction and Storage
T
e
mperature Range
Junction-to Ambient Thermal Resistance(PCB mounted)
2
T
J
,
T
S
TG
R
θ
J
A
-55 to + 150
883
O
C
/W
Note:1.Maximum DC current limited by the package
2.Surface mounted on FR4 board, t<10 sec
3.Pulse width<300us, Duty cycle<2%
May
25
,201
7
-REV.0
5
PAGE . 1
2N7002KTB
ELECTRICAL CHARACTERISTICS
Parameter
Static
Symbol
T
e
st Condition
Min.
Ty
p
.
Max.
Units
Drain-Source Breakdown
Voltage
BV
D
SS
V
GS(th)
R
D
S(on)
R
D
S(on)
I
D
SS
V
GS
=0V, I
D
=
10
μ
A
V
D
S
=
V
GS
, I
D
=
250
μ
A
V
GS
=4.5V, I
D
=200mA
V
GS
=10V, I
D
=500mA
V
DS
=60V, V
GS
=0V
60
–
–
–
–
–
–
–
–
2.5
4.0
3.0
1
V
V
Gate Threshold Voltage
1
Drain-Source On-State
Resistance
–
Ω
Drain-Source On-State
Resistance
–
Zero Gate Voltage Drain
Current
–
–
μ
A
μ
A
mS
Gate Body Leakage
Forward
T
r
ansconductance
D
y
namic
I
GSS
V
GS
=
+20V, V
D
S
=
0V
V
D
S
=
15V, I
D
=
250mA
+10
–
g
f
S
100
V
D
S
=
15V, I
D
=
200mA
T
o
tal Gate Charge
Q
g
–
–
0.8
nC
ns
V
GS
=4.5V
Turn-On Delay Time
Turn-Off Delay Time
Input Capacitance
Output Capacitance
td
(
on)
td
(off)
C
i
ss
–
–
–
–
–
–
–
–
–
–
20
125
35
10
V
DD
=30V , R
L
=150
Ω
I
D
=200mA , V
GEN
=10V
R
G
=10
Ω
V
D
S
=
25V, V
GS
=
0V
f=1.0MH
Z
C
o
ss
C
r
ss
pF
Reverse
T
r
ansfer
Capacitance
5
Source-Drain Diode
Diode Forward Voltage
V
S
D
I
s
I
S
=
200mA , V
GS
=
0V
–
–
–
0.82
1.3
115
800
V
Continuous Diode Forward
Current
–
–
–
–
mA
mA
Pulsed Diode Forward
Current
I
s
M
V
DD
V
DD
Switching
Gate Charge
Test Circuit
Test Circuit
R
L
R
L
V
IN
V
GS
V
OUT
1mA
R
G
R
G
May 25,2017REV.05
PAGE . 2
2N7002KTB
Typical Characteristics Curves (T
A
=25
O
C,unless
o
o
t
t
h
h
e
e
r
r
w
w
i
i
s
s
e
e
n
n
o
o
t
t
e
e
d
d
)
)
1.2
1
1.2
V
DS
=10V
V
G
S
= 6.0~10V
5.0V
1
0.8
0.6
0.4
0.2
0
4.0V
0.8
0.6
0.4
0.2
0
4.0V
T
J
=25
℃
3.0V
3.0V
0
1
2
3
4
5
6
0
1
2
3
4
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
F
I
G
.
1
–
O
u
t
p
u
t
Characteristic
FIG.2- Transfer Characteristic
5
4
3
2
1
0
5
4
3
2
1
0
V
GS
= 4.5V
I
D
=500
m
A
I
D
=200mA
V
GS
=10V
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
FIG.3- On
Resistance vs Drain
C
C
u
u
r
r
r
r
e
e
n
n
t
t
FIG.4- On
Resistance vs Gate to Source
V
V
o
o
l
l
t
t
a
a
g
g
e
e
1.8
V
GS
=10V
I
D
=500mA
1.6
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100
125 150
T
J
– Junction Temperature (
o
C)
FIG.5- On
Resistance
v
v
s
s
J
J
u
u
n
n
c
c
t
t
i
i
o
o
n
n
T
T
e
e
m
m
p
p
e
e
r
r
a
a
t
t
u
u
r
r
e
e
May 25,2017REV.05
PAGE . 3
2N7002KTB
10
8
V
DS
=10V
Vgs
I
D
=250mA
Qg
6
4
2
Qsw
Vgs(th)
Qg(th)
0
0
0.2
0.4
0.6
0.8
1
Q
g
– Gate Charge (nC)
Qgs
Qgd
Qg
Fig.7 – Gate Charge
Fig.6 – Gate Charge Waveform
1.2
88
I
D
=250
m
A
ID = 250uA
86
84
82
80
78
76
74
72
1.1
1
0.9
0.8
0.7
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
– Junction Temperature (
o
C)
T
J
– Junction Temperature (
o
C)
Fig.9 –
Breakdown Voltage vs Junction
T
e
mperature
Fig.8 – Threshold Voltage vs
T
e
mperature
10
V
GS
=0V
1
25
℃
0.1
T
J
=125
℃
-55
℃
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
SD
– Source-to-Drain Voltage (V)
Fig.10 – Source-Drain Diode
F
F
o
o
r
r
w
w
a
a
r
r
d
d
V
V
o
o
l
l
t
t
a
a
g
g
e
e
May 25,2017REV.05
PAGE . 4
2N7002KTB
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing
information
T/R – 4K per 7″ plastic Reel
May 25,2017REV.05
PAGE . 5
2N7002KTB
Part No_packing code_Version
2N7002KTB_R1_00001
For example :
RB500V-40
_
R2
_
00001
Serial number
Part No.
Version code means HF
Packing size code means 13″
Packing type means T/R
Packing Code
XX
Version Code
XXXXX
Packing type
1
st
Code
Packing size code
2
nd
Code
HF or RoHS
1
st
Code 2
nd
~5
th
Code
Tape and Ammunition Box
(T/B)
A
R
B
T
S
L
F
N/A
7″
0
1
HF
0
1
serial number
serial number
Tape and Reel
(T/R)
RoHS
Bulk Packing
(B/P)
13″
2
Tube Packing
(T/P)
26mm
52mm
X
Y
U
D
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
PANASERT T/B C
A
T
HODE UP
(PBCU)
PANASERT T/B C
A
T
HODE DOWN
(PBCD)
FORMING
May 25,2017REV.05
PAGE . 6
2N7002KTB
Disclaimer
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from Panjit International Inc..
•
•
Panjit International Inc. reserves the rights to make changes of the content herein the
document anytime without notification. Please refer to our website for the latest
document.
Panjit International Inc. disclaims any and all liability arising out of the application or use of
any product including damages incidentally and consequentially occurred.
•
•
•
Panjit International Inc. does not assume any and all implied warranties, including warranties
of fitness for particular purpose, non-infringement and merchantability.
Applications shown on the herein document are examples of standard use and operation.
Customers are responsible in comprehending the suitable use in particular applications.
Panjit International Inc. makes no representation or warranty that such applications will be
suitable for the specified use without further testing or modification.
The products shown herein are not designed and authorized for equipments requiring high
level of reliability or relating to human life and for any applications concerning life-saving
or life-sustaining, such as medical instruments, transportation equipment, aerospace
machinery et cetera. Customers using or selling these products for use in such applications
•
•
do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages
resulting from such improper use or sale.
Since Panjit uses lot number as the tracking base, please provide the lot number for tracking
when complaining.
May 25,2017REV.05
PAGE . 7
