PANJIT-International-BCP56-16-AU-R2-000A1
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P
BCP56-16-AU
NPN Low Vce(sat) Transistor
SOT-223
Unit: inch(mm)
100V
1A
Voltage
Current
Features
Silicon NPN epitaxial type
Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA
High collector current capability
Excellent DC current gain characteristics
AEC-Q101 qualified
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC61249 Standard
PNP complement: BCP53-16-AU
Mechanical Data
Case: SOT-223 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.043 ounces, 0.123 grams
Marking: 8110DW
Maximum Ratings and Thermal Characteristics
(T
A
=25
o
C unless otherwise noted)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
LIMIT
120
100
6
UNITS
Collector-Base Voltage
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
Collector Current (DC)
1
A
Collector Current (Pulse)
I
CP
3
A
Power Dissipation
P
D
2.6
W
Junction Temperature
T
J
150
-55~150
o
C
o
C
o
C/W
Operating Junction and Storage Temperature Range
Thermal Resistance from Junction to Ambient
(Note )
T
J
,T
STG
R
θJA
48
Note: Mounted on FR4 PCB at 1 inch square copper pad.
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BCP56-16-AU
Electrical Characteristics
(T
A
=25
o
C unless otherwise noted)
PARAMETER
OFF Characteristics
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
C
= 10mA, I
B
= 0A
I
C
= 0.1mA, I
E
= 0A
I
E
= 0.1mA, I
C
= 0A
V
CB
= 80V, I
E
= 0A
V
EB
= 6V, I
C
= 0A
100
–
–
–
–
–
–
–
V
V
120
6
–
–
V
100
100
nA
nA
Emitter Cutoff Current
I
EBO
–
ON characteristics
V
CE
= 2V, I
C
= 5mA
V
CE
= 2V, I
C
= 150mA
V
CE
= 2V, I
C
= 500mA
I
C
= 0.1A, I
B
= 10mA
I
C
= 0.5A, I
B
= 50mA
I
C
= 1A, I
B
= 0.1A
100
–
–
DC Current Gain
(Note1)
h
FE
100
–
250
–
–
40
–
60
150
250
–
–
120
350
500
1.0
1.1
–
Collector-Emitter Saturation Voltage
(Note1)
V
CE(SAT)
–
mV
–
I
C
= 0.1A, I
B
= 10mA
I
C
= 0.5A, I
B
= 50mA
V
CE
= 5V,
I
E
= -50mA
V
CB
= 10V, I
E
= 0A,
f=1MHz
–
–
Base-Emitter Saturation voltage
(Note1)
V
BE(SAT)
f
T
V
–
Transition Frequency
100
–
MHz
pF
Collector Output Capacitance
C
OB
–
–
10
Note: 1. Pulse width<300us, Duty cycle<2%
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BCP56-16-AU
TYPICAL CHARACTERISTIC CURVES
Fig.1 DC Current Gain
Fig.2 DC Current Gain
Fig.3 Collector-Emitter Saturation Voltage
Fig.4 Collector-Emitter Saturation Voltage
Fig.5 Base-Emitter Saturation Voltage
Fig.6 Base-Emitter Saturation Voltage
February 15,2019-REV.00
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BCP56-16-AU
TYPICAL CHARACTERISTIC CURVES
Fig.7 Base-Emitter Voltage
Fig.8 Collector Current
Fig.9 Input Capacitance
Fig.10 Output Capacitance
Fig.11 Power
Derating Curve
February 15,2019-REV.00
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BCP56-16-AU
PART NO PACKING CODE VERSION
Part No Packing Code
Package Type
Packing type
Marking
Version
BCP56-16-AU_R2_000A1
SOT-223
2,500 pcs / 13
”
reel
8110DW
Halogen free
MOUNTING PAD LAYOUT
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BCP56-16-AU
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particular purpose, non-infringement and merchantability.
●
Applications shown on the herein document are examples of standard use and operation. Customers are
responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no
representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
●
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February 15,2019-REV.00
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