PANJIT-International-BSS138

BSS138  

50V N-Channel Enhancement Mode MOSFET – ESD Protected  

FEATURES  

• R

DS(ON)

, V

GS

@10V,I

DS

@500mA=3

Ω

 

• R

DS(ON)

, V

GS

@4.5V,I

DS

@200mA=4

Ω  

• R

DS(ON)

, V

GS

@2.5V,I

DS

@100mA=6

Ω  

0.120(3.04)  

0.110(2.80)  

• Advanced Trench Process Technology  

• High Density Cell Design For Ultra Low On-Resistance  

• Very Low Leakage Current In Off Condition  

• Specially Designed for Battery Operated Systems, Solid-State Relays  

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.  

• ESD Protected  

0.056(1.40)  

0.047(1.20)  

0.008(0.20)  

0.003(0.08)  

0.079(2.00)  

0.070(1.80)  

• Lead free in

compliance with EU RoHS 2.0  

• Green molding

compound as per IEC 61249 standard  

0.004(0.10)  

0.000(0.00)  

0.044(1.10)  

0.035(0.90)  

0.020(0.50)  

0.013(0.35)  

MECHANICAL DATA  

• Case: SOT-23 Package  

•

T

e

rminals: Solderable per MIL-S

T

D

-750,Method 2026  

• Apporx. Weight: 0.0003 ounce, 0.0084 gr

a

m  

• Marking: 138  

Maximum Ratings

 

and Thermal Characteristics

 

(T

A

=25

O

C unless otherwise noted

 

)  

PARAMETER  

Drain-Source Voltage  

S

y

mbol  

V

D

S  

Limit  

50  

Units  

V

Gate-Source Voltage  

V

G

S  

I

D  

+20  

300  

V

Continuous D

 

rain C

 

urrent  

mA  

mA  

1)  

Pulsed D

 

rain Current  

I

D

M  

2000  

T

A

=

25

O

C  

T

A

=

75

O

C  

350  

210  

Maximum P

 

ower D

 

issipation  

P

D  

mW  

Operating Junction and Storage

T

e

mperature  

Range  

T

J

,

T

S

TG  

R

θ

J

A  

-55 to + 150  

357  

Junction-to Ambient Thermal Resistance(PCB mounted)

2  

Note: 1. Maximum DC current limited by the package  

2. Surface mounted on FR4 board, t < 5 sec  

October 15,2019-REV.03  

PAGE . 1  

BSS138  

ELECTRICALCHARACTERISTICS  

Parameter  

Static  

Symbol  

T

e

st C

 

ondition  

Min.  

Ty

p

.  

Max.  

Units  

Drain-Source B

 

reakdown  

Voltage  

BV

D

SS  

V

G

S(th)  

R

D

S(on)  

R

D

S(on)  

V

G

S

=

0V , I

D

=

10

μ

A  

V

D

S

=

V

G

S

, I

D

=

250

μ

A  

V

GS

=2.5V , I

D

=100mA  

V

GS

=4.5V , I

D

=200mA  

50  

0.8  

–

–

–

V

V

Gate Threshold Voltage  

–

1.5  

6.0  

4.0  

Drain-Source O

 

n-State  

Resistance  

2.8  

1.8  

Drain-Source O

 

n-State  

Resistance  

–

Ω

Drain-Source O

 

n-State  

Resistance  

R

D

S(on)  

I

D

SS  

V

GS

=10V , I

D

=500mA  

V

DS

=50V , V

GS

=0V  

–

1.6  

3.0  

1

Zero Gate Voltage Drain  

C

u

rrent  

–

–

–

–

–

μ

A  

μ

A  

mS  

Gate Body Leakage  

Forward Transconductance  

D

y

namic  

I

G

SS  

V

G

S

=

+20V , V

D

S

=

0V  

V

D

S

=

10V , I

D

=

250mA  

+10  

–

g

fS  

100  

V

D

S

=

25V, I

D

=

250mA  

V

GS

=4.5V  

T

o

tal Gate C

 

harge  

Q

g  

–

–

1.0  

nC  

ns  

Turn-On Time  

t

o

n  

t

o

ff  

–

–

–

–

–

–

–

–

–

–

40  

150  

50  

10  

V

DD

=30V , R

L

=100

Ω  

I

D

=300mA , V

GEN

=10V  

R

G

=6

Ω  

Turn-Off Time  

Input C

 

apacitance  

Output C

 

apacitance  

C

i

ss  

C

o

ss  

C

r

ss  

V

D

S

=

25V , V

G

S

=

0V  

f=1.0MH

Z  

pF  

Reverse Transfer  

Capacitance  

5

Source-Drain D

 

iode  

Diode Forward Voltage  

V

S

D  

I

S  

I

S

=250mA , V

GS

=0V  

–

–

–

0.82  

1.2  

300  

V

Continuous D

 

iode Forward  

C

u

rrent  

–

–

–

–

mA  

mA  

Pulse D

 

iode Forward  

C

u

rrent  

I

S

M  

2000  

V

DD  

V

DD  

Switching  

Gate Charge  

Test Circuit  

Test Circuit  

R

L  

R

L  

V

IN  

V

GS  

V

OUT  

1mA  

R

G  

R

G  

October 15,2019-REV.03  

PAGE . 2  

BSS138  

Typical

C

C

h

h

a

a

r

r

a

a

c

c

t

t

e

e

r

r

i

i

s

s

t

t

i

i

c

c

s

s

C

C

u

u

r

r

v

v

e

e

s

s

(

(

T

T

A

=

=

2

2

5

5

O

C

C

,

,

u

u

n

n

l

l

e

e

s

s

s

s

o

o

t

t

h

h

e

e

r

r

w

w

i

i

s

s

e

e

n

n

o

o

t

t

e

e

d

d

)

)  

1

0.8  

0.6  

0.4  

0.2  

0

1.2  

V

GS

=10V~4.0V  

V

DS

=10V  

1.0  

0.8  

3.0V  

0.6  

T

J

= 2

5

o

C  

0.4  

0.2  

0

0

1

2

3

4

5

6

0

1

2

3

4

5

V

DS

– Drain-to-Source Voltage (V)  

V

GS

– Gate-to-Source Voltage (V)  

FIG.2- Transfer Characteristic  

5

4

3

5

4

3

2

1

0

I

D

=200mA  

V

GS

=4.5V  

2

I

D

=500mA  

V

GS

=10V  

1

0

0

2

4

6

8

10  

0

0.2  

0.4  

0.6  

0.8  

1

1.2  

V

GS

– Gate-to-Source Voltage (V)  

I

D

– Drain Current (A)  

FIG.4- On

 

Resistance vs Gate to Source Voltage  

FIG.3- On

 

Resistance vs Drain Current  

1.8  

V

GS

=10 V  

1.6  

1.4  

1.2  

1

I

D

=500mA  

0.8  

0.6  

-50 -25  

0

25 50 75

 

100 125 150  

T

J

– Junction

T

e

mperature (

O

C)  

FIG.5- On

 

Resistance vs Junction

T

e

mperature  

October 15,2019-REV.03  

PAGE . 3  

BSS138  

October 15,2019-REV.03  

PAGE . 4  

BSS138  

MOUNTING PAD LAYOUT  

Unit

：

inch(mm)  

SOT-23  

0.031 MIN.  

(0.80) MIN.  

0.037  

(0.95)  

0.043  

(1.10)  

0.106  

(2.70)  

ORDER INFORMATION  

• P

a

c

king

 

information  

T/R – 12K per 13″ pl

a

s

tic Reel  

T/R –

 

3K per 7″ pl

a

s

tic Reel  

October 15,2019-REV.03  

PAGE . 5  

BSS138  

Part No_packing code_Version  

BSS138_R1_00001  

BSS138_R2_00001  

For example :  

RB500V-40

_

R2

_

00001  

Serial number  

Part No.  

Version code means HF  

Packing size code means 13″  

Packing type means T/R  

Packing Code

XX  

Version Code

XXXXX  

Packing type  

1

st

Code  

Packing size code  

2

nd

Code

HF or RoHS

 

1

st

Code 2

nd

~5

th

Code  

Tape and Ammunition Box  

(T/B)  

A

R

B

T

S

L

F

N/A  

7″  

0

1

HF  

0

1

serial number  

serial number  

Tape and Reel  

(T/R)  

RoHS  

Bulk Packing  

(B/P)  

13″  

2

Tube Packing  

(T/P)  

26mm  

52mm  

X

Y

U

D

Tape and Reel (Right Oriented)  

(TRR)  

Tape and Reel (Left Oriented)  

(TRL)  

PANASERT T/B C

A

T

HODE UP  

(PBCU)  

PANASERT T/B C

A

T

HODE DOWN  

(PBCD)  

FORMING  

October 15,2019-REV.03  

PAGE . 6  

BSS138  

Disclaimer  

Reproducing and modifying information of the document is prohibited without permission  

from Panjit International Inc..  

•

•

Panjit International Inc. reserves the rights to make changes of the content herein the  

document anytime without notification. Please refer to our website for the latest  

document.  

Panjit International Inc. disclaims any and all liability arising out of the

a

p

plication or use of  

any product including d

a

m

ages incidentally and consequentially occurred.  

•

•

•

Panjit International Inc. does not assume any and all implied warranties, including warranties  

of fitness for particular purpose, non-infringement and merchantability.  

Applications shown on the herein document are ex

a

m

ples of standard use and operation.  

Customers are responsible in comprehending the suit

a

b

le use in particular

a

p

plications.  

Panjit International Inc. makes no representation or warranty that such applications will be  

suitable for the specified use without further testing or modification.  

The products shown herein are not designed and authorized for equipments requiring high  

level of reliability or relating to hum

a

n

l

ife and for any applications concerning life-saving  

or life-sustaining, such

a

s

m

edical instruments, transportation equipment, aerospace  

machinery et cetera. Customers using or selling th

e

s

e products for use in such

a

p

plications  

•

•

do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages  

resulting from such improper use or sale.  

Since Panjit uses lot number as the tracking base, please provide the lot number for tracking  

when complaining.  

October 15,2019-REV.03  

PAGE . 7