PANJIT-International-MMBTA06-R1-00001
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P
MMBTA05 / MMBTA06 / MMBTA55 / MMBTA56
NPN AND PNP HIGH VOLTAGE TRANSISTOR
SOT-23
Unit: inch(mm)
60~80V
225mW
Voltage
Power
Features
NPN and PNP silicon, planar design
Collector current I
C
= 500mA
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case: SOT-23 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Maximum Ratings and Thermal Characteristics
(T
A
=25
o
C unless otherwise noted)
PARAMETER
SYMBOL
MMBTA05
MMBTA55
MMBTA06
MMBTA56
UNITS
Marking
B05
B55
B06
B56
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Circuit Figure
V
CEO
V
CBO
V
EBO
I
C
60
60
80
80
V
V
4
V
500
mA
NPN
PNP
NPN
PNP
Maximum Ratings and Thermal Characteristics
(T
A
=25
o
C unless otherwise noted)
CHARACTERISTIC
Total device dissipation FR-4 board (Note 1) T
A
=25
o
C
derate above 25
o
C
SYMBOL
P
D
MAX.
225
1.8
UNITS
mW
mW/
o
C
o
C/W
mW
mW/
o
C
o
C/W
o
C
Typical thermal resistance
R
θJ
A
556
300
2.4
Total device dissipation alumina substrate (Note 2) T
A
=25
o
C
derate above 25
o
C
P
D
Typical thermal resistance
R
θJ
A
417
Operating junction and storage temperature range
T
J
, T
STG
-55 to 150
Note : 1. FR-4=70 x 60 x 1mm.
2. Alumina=0.4 x 0.3 x 0.024 in. 99.5 alumina.
September 18,2018-REV.05
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P
MMBTA05 / MMBTA06 / MMBTA55 / MMBTA56
Electrical Characteristics
(T
A
=25
o
C unless otherwise noted)
PARAMETER
SYMBOL
MIN.
MAX.
UNITS
OFF Characteristics
Collector-Emitter Breakdown Voltage
(I
C
=1.0mA, I
B
=0)
MMBTA05, MMBTA55
MMBAT06, MMBTA56
V
(BR)CEO
60
80
–
–
V
Emitter-Base Breakdown Voltage
(I
E
=100
A, I
C
=0)
V
(BR)EBO
4
–
–
V
Collector Cutoff Current
(V
CE
=60V, I
B
=0)
I
CES
0.1
A
Collector Cutoff Current
(V
CB
=60V, I
E
=0)
MMBTA05, MMBTA55
MMBAT06, MMBTA56
I
CBO
–
–
0.1
0.1
A
(V
CB
=80V, I
E
=0)
ON characteristics
DC Current Gain
(I
C
=10mA, V
CE
=1V)
f
FE
100
100
–
–
–
(I
C
=100mA, V
CE
=1V)
Collector-Emitter Saturation Voltage
(I
C
=100mA, I
B
=10mA)
Base-Emitter On Voltage
(I
C
=100mA, V
CE
=1V)
V
CE(SAT)
–
–
0.25
1.2
V
V
V
BE(ON)
Small-signal characteristics
Current-Gain-Bandwidth Product
(I
C
=10mA, V
CE
=2V, f=100MHz)
f
T
100
–
MHz
September 18,2018-REV.05
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MMBTA05 / MMBTA06 / MMBTA55 / MMBTA56
Fig.1 Current-Gain
─
Bandwidth Product
Fig.2 Capacitance
Fig.3 Switching Time
Fig.4 DC Current Gain
Fig.5 ON Voltages
Fig.6 Collector Saturation Region
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MMBTA05 / MMBTA06 / MMBTA55 / MMBTA56
Fig.7 Base-Emitter Temperature Coefficient
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MMBTA05 / MMBTA06 / MMBTA55 / MMBTA56
Part No Packing Code Version
.
Part No Packing Code
MMBTA05_R1_00001
MMBTA05_R2_00001
Package Type
SOT-23
Packing Type
3K / 7″ Reel
Marking
B05
Version
Halogen Free
Halogen Free
SOT-23
12K / 13″ Reel
B05
Mounting Pad Layout
September 18,2018-REV.05
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MMBTA05 / MMBTA06 / MMBTA55 / MMBTA56
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●
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website for the latest document.
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consequentially occurred.
●
Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for particular purpose, non-infringement
and merchantability.
●
Applications shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the
suitable use in particular applications. Panjit International Inc. makes no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
●
The products shown herein are not designed and authorized for equipments relating to human life and for any applications concerning life-
saving or life-sustaining, such as medical instruments, aerospace machinery et cetera. Customers using or selling these products for use in
such applications do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages resulting from such improper use
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September 18,2018-REV.05
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