PANJIT-International-PJD50N10AL-L2-00001
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P
PJD50N10AL
100V N-Channel Enhancement Mode MOSFET
100 V
42 A
Voltage
Current
Features
R
DS(ON)
, V
GS
@4.5V, ID@15A<28.5m
Ω
Advanced Trench Process Technology
TO-252AA
High density cell design for ultra low on-resistance
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std..
(Halogen Free)
Mechanical Data
Case : TO-252AA Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0104 ounces, 0.297grams
Maximum Ratings and Thermal Characteristics
(T
A
=25
o
C unless otherwise noted)
PARAMETER
Drain-Source Voltage
SYMBOL
LIMIT
UNITS
V
DS
V
GS
100
+20
42
V
V
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
Power Dissipation
T
C
=25
o
C
T
C
=100
o
C
T
C
=25
o
C
T
C
=25
o
C
T
C
=100
o
C
T
A
=25
o
C
T
A
=70
o
C
T
A
=25
o
C
T
A
=70
o
C
I
D
26
A
I
DM
P
D
150
83
W
33
6.3
A
A
Continuous Drain Current
I
D
5.1
Power Dissipation
Power Dissipation
2.0
P
D
W
1.3
Single Pulse Avalanche Energy
(Note 6)
E
AS
T
J
,T
STG
R
θJC
63.4
-55~150
1.5
mJ
o
C
Operating Junction and Storage Temperature Range
Junction to Case
Typical Thermal Resistance
o
C/W
(Note 4,5)
Junction to Ambient
R
θJA
62.5
Limited only By Maximum Junction Temperature
July 28,2016-REV.02
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P
PJD50N10AL
Electrical Characteristics
(T
A
=25
o
C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
V
GS(th)
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V,I
D
=20A
V
GS
=4.5V,I
D
=15A
V
DS
=80V,V
GS
=0V
V
GS
=+20V,V
DS
=0V
100
–
1.8
20
22
–
–
V
V
1.0
2.5
–
–
–
–
25
Drain-Source On-State Resistance
R
DS(on)
m
Ω
28.5
1.0
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 7)
I
DSS
I
GSS
uA
nA
–
+100
Total Gate Charge
Q
g
Q
gs
–
–
–
–
–
–
–
–
–
–
29
4.5
6.4
1485
135
67
–
–
–
–
–
–
–
–
–
–
V
DS
=50V, I
D
=10A,
V
GS
=10V
(Note 1,2)
Gate-Source Charge
Gate-Drain Charge
nC
pF
Q
gd
Input Capacitance
Ciss
Coss
Crss
V
DS
=30V, V
GS
=0V,
f=1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
td
(on)
7.8
30
V
DD
=50V, I
D
=10A,
V
GS
=10V,
R
G
=3
Ω
(Note 1,2)
Turn-On Rise Time
t
r
ns
Turn-Off Delay Time
td
(off)
t
f
35
Turn-Off Fall Time
14
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
—
–
–
–
42
A
V
V
SD
I
S
=1.0A, V
GS
=0V
0.7
1.2
NOTES :
1. Pulse
width<300us, Duty cycle<2%
2. Essentially
independent of operating temperature typical characteristics.
3. Repetitive
rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and duty cycles to keep initial TJ =25°C.
4. The
maximum current rating is package limited.
5. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. Mounted on a 1 inch
2
with 2oz.square pad of copper.
6. The
test condition is L=3mH, I
AS
=6.5A, V
DD
=25V, V
GS
=10V
7. Guaranteed
by design, not subject to production testing.
July 28,2016-REV.02
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PJD50N10AL
TYPICAL CHARACTERISTIC CURVES
Fig.1 Output Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.5 On-Resistance Variation with VGS.
Fig.2 Transfer Characteristics
Fig.4 On-Resistance vs. Junction temperature
Fig.6 Source-Drain Diode Forward Voltage
July 28,2016-REV.02
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PJD50N10AL
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.9 Threshold Voltage Variation with Temperature
Fig.11 Maximum Safe Operating Area
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.10 Capacitance vs. Drain-Source Voltage
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PJD50N10AL
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Transient Thermal Impedance vs. Pulse Width
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PJD50N10AL
Packaging Information
TO-252AA Dimension
.
Unit: mm
July 28,2016-REV.02
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PJD50N10AL
PART NO PACKING CODE VERSION
Part No Packing Code
Package Type
Packing Type
Marking
Version
PJD50N10AL_L2_00001
TO-252AA
3,000pcs / 13
”
reel
50N10AL
Halogen free
MOUNTING PAD LAYOUT
TO-252AA
Unit: mm
July 28,2016-REV.02
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PJD50N10AL
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particular purpose, non-infringement and merchantability.
●
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responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no
representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
●
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July 28,2016-REV.02
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