PANJIT-International-PJT7600-R1-00001
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P
PJT7600
20V Complementary Enhancement Mode MOSFET
–
ESD Protected
SOT-363
Unit: inch(mm)
20 / -20V
1 / -0.7A
Voltage
Current
Features
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-363 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0002 ounces, 0.006 grams
Marking: T60
Maximum Ratings and Thermal Characteristics
(T
A
=25
o
C unless otherwise noted)
PARAMETER
SYMBOL
N-Ch LIMIT
P-Ch LIMIT
UNITS
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
I
D
20
+8
1
-20
+8
V
V
Continuous Drain Current
-0.7
-2.8
A
(Note 4)
Pulsed Drain Current
I
DM
4
A
T
a
=25
o
C
Derate above 25
o
C
350
2.8
mW
mW/
o
C
o
C
Power Dissipation
P
D
Operating Junction and Storage Temperature Range
Typical Thermal resistance
T
J
,T
STG
-55~150
Junction to Ambient
(Note 3)
o
C/W
R
θJA
357
–
May 5,2016-REV.03
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P
PJT7600
N-Channel Electrical Characteristics
(T
A
=25
o
C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
V
GS(th)
V
GS
=0V, I
D
= 250uA
V
DS
=V
GS
, I
D
= 250uA
V
GS
= 4.5V, I
D
= 1A
V
GS
= 2.5V, I
D
= 0.7A
V
GS
= 1.8V, I
D
= 0.3A
V
DS
= 20V, V
GS
=0V
V
GS
=+8V, V
DS
=0V
20
–
–
V
V
0.5
0.8
114
160
280
0.01
+2
1.0
150
215
400
1
–
–
–
–
–
Drain-Source On-State Resistance
R
DS(on)
m
Ω
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
I
DSS
I
GSS
uA
uA
+10
Total Gate Charge
Q
g
Q
gs
–
–
–
–
–
–
1.6
0.3
0.41
92
–
–
–
–
–
–
V
DS
=10V, I
D
=1A,
V
GS
=4.5V
(Note 1,2)
Gate-Source Charge
Gate-Drain Charge
nC
pF
Q
gd
Input Capacitance
Ciss
Coss
Crss
V
DS
=10V, V
GS
=0V,
f=1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
Switching
25
9.1
Turn-On Delay Time
Turn-On Rise Time
td
(on)
tr
–
–
–
–
5.8
25.7
41
–
–
–
–
V
DD
=10V, I
D
=1A,
V
GS
=4.5V, R
G
=6
Ω
(Note 1,2)
ns
Turn-Off Delay Time
Turn-Off Fall Time
td
(off)
tf
31
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
—
–
–
–
1
A
V
V
SD
I
S
= 1A, V
GS
=0V
0.85
1.2
May 5,2016-REV.03
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P
PJT7600
P-Channel Electrical Characteristics
(T
A
=25
o
C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
V
GS(th)
V
GS
=0V, I
D
= -250uA
V
DS
=V
GS
, I
D
= -250uA
V
GS
= -4.5V, I
D
= -0.7A
V
GS
= -2.5V, I
D
= -0.6A
V
GS
= -1.8V, I
D
= -0.5A
V
DS
=-20V, V
GS
=0V
V
GS
=+8V, V
DS
=0V
-20
–
–
V
V
-0.5
-0.64
260
-1
–
–
–
–
–
325
420
600
-1
Drain-Source On-State Resistance
R
DS(on)
310
m
Ω
400
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
I
DSS
I
GSS
-0.01
+3.5
uA
uA
+10
Total Gate Charge
Q
g
Q
gs
–
–
–
–
–
–
2.2
0.4
0.5
151
27
–
–
–
–
–
–
V
DS
=-10V, I
D
=-0.7A,
V
GS
=-4.5V
(Note 1,2)
Gate-Source Charge
Gate-Drain Charge
nC
pF
Q
gd
Input Capacitance
Ciss
Coss
Crss
V
DS
=-10V, V
GS
=0V,
f=1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
Switching
8.8
Turn-On Delay Time
Turn-On Rise Time
td
(on)
tr
–
–
–
–
2.2
19.2
6.2
23
–
–
–
–
V
DD
=-10V, I
D
=-0.7A,
V
GS
=-4.5V, R
G
=6
Ω
(Note 1,2)
ns
Turn-Off Delay Time
Turn-Off Fall Time
td
(off)
tf
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
—
–
–
–
-1
A
V
V
SD
I
S
=-1A, V
GS
=0V
-0.86
-1.2
NOTES :
1. Pulse
width<300us, Duty cycle<2%
2. Essentially
independent of operating temperature typical characteristics.
3. R
JA
is the
sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The
maximum current rating is package limited.
May 5,2016-REV.03
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P
PJT7600
N-Channel TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.4 On-Resistance vs. Junction temperature
Fig.6 Body Dlode Characterlslcs
Fig.3 On-Resistance vs. Drain Current
Fig.5 On-Resistance Variation with VGS.
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P
PJT7600
N-Channel TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
May 5,2016-REV.03
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P
PJT7600
P-Channel TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.5 On-Resistance Variation with VGS.
Fig.2 Transfer Characteristics
Fig.4 On-Resistance vs. Junction temperature
Fig.6 Body Dlode Characterlslcs
May 5,2016-REV.03
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P
PJT7600
P-Channel TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Threshold Voltage Variation with Temperature.
May 5,2016-REV.03
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P
PJT7600
PART NO PACKING CODE VERSION
Part No Packing Code
PJT7600_R1_00001
PJT7600_R2_00001
Package Type
SOT-363
Packing type
3K pcs / 7
”
reel
10K pcs / 13
”
reel
Marking
T60
Version
Halogen free
Halogen free
SOT-363
T60
MOUNTING PAD LAYOUT
May 5,2016-REV.03
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P
PJT7600
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●
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●
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without notification. Please refer to our website for the latest document.
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including damages incidentally and consequentially occurred.
●
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particular purpose, non-infringement and merchantability.
●
Applications shown on the herein document are examples of standard use and operation. Customers are
responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no
representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
●
The products shown herein are not designed and authorized for equipments requiring high level of reliability or
relating to human life and for any applications concerning life-saving or life-sustaining, such as medical
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May 5,2016-REV.03
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