PIP-PIP8205-Z6

Part #	PIP-PIP8205-Z6
Download	PIP-PIP8205-Z6

PIP8205

20V N-Channel MOSFET

General Features

DSS

20V

Test Conditions

DS(ON),max.m

DS(ON),typ.m

=10V, I

=5.0A

=4.5V, I

=4.5A

=2.5V, I

=3.0A

‹

Proprietary New Trench

chnology

Low Gate Charge Minimize Switching

Loss

‹

Fast Recovery Body Diode

Applications

‹

High efficiency DC/DC Converters

Motor Bridge Switch

Oring FET/Load Switching

TSSOP-8

Ordering Information

SOT-23-6

Marking

8205

Part Number

PIP8205-S8

PIP8205-Z6

Package

TSSOP-8

SOT-23-6

Brand

8205

TSSOP-8 & SOT-23-6 Definition and Inner Circuit

Absolute Maximum Ratings

=25 unless

otherwise specified

Symbol

DSS

GSS

Parameter

8205

Unit

Drain-to-Source Voltage

[1]

Gate-to-Source Voltage

±12

7.0

Continuous Drain Current

=25

Pulsed Drain Current at V

=10V

Power Dissipation

=25

1.5

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10

seconds, Package Body for 10 seconds

PAK

300

260

& T

STG

Operating and Storage Temperature Range

-55 to 150

Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.

Thermal Characteristics

Symbol

Parameter

8205

Unit

θJA

Thermal Resistance, Junction-to-Ambient

110

Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PI

Page 1 / 9

Rev. A.2018

PIP8205

Electrical Characteristics

OFF Characteristics

=25 unless

otherwise specified

Symbol

Parameter

Min. Typ. Max. Unit

Test Conditions

DSS

Drain-to-Source Breakdown Voltage

—

=0V, I

=250uA

=20V, V

=0V

=16V, V

=0V,

=125

DSS

Drain-to-Source Leakage Current

Gate-to-Source Leakage Current

—

100

—

+100

-100

=+12V, V

=0V

=-12V, V

=0V

GSS

ON Characteristics

Symbol

=25

unless otherwise specified

Parameter

Min. Typ. Max. Unit

Test Conditions

—

=10V, I

=5.0A

=4.5V, I

=4.5A

=2.5V, I

=3.0A

Static Drain-to-Source

On-Resistance

DS(ON)

mΩ

GS(TH)

Gate Threshold Voltage

0.5

—

1.0

, I

=250uA

Dynamic Characteristics

Essentially independent of operating temperature

Symbol

Parameter

Min. Typ. Max. Unit

Test Conditions

iss

Input Capacitance

—

900

100

220

—

=0V,

=10V,

f=1.0MH

rss

Reverse Transfer Capacitance

Output Capacitance

oss

Total Gate Charge

=10V,

=6A,

Vgs=4.5V

Gate-to-Source Charge

Gate-to-Drain (Miller) Charge

2.3

Resistive Switching Characteristics

Essentially independent of operating temperature

Symbol

Parameter

Min. Typ. Max. Unit

Test Conditions

d(ON)

Turn-on Delay Time

—

=10V

= 4.5V

=6A,

rise

Rise Time

d(OFF)

fall

Turn-Off Delay Time

Fall Time

=6.0

Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PI

Page 2 / 9

Rev. A.2018

PIP8205

Source-Drain Body Diode Characteristics

=25

unless otherwise specified

Symbol

Parameter

Min

Typ. Max. Unit

Test Conditions

Continuous Source Current

—

Integral PN-diode in

MOSFET

Pulsed Source Current

Diode Forward Voltage

—

1.2

=6A, V

=0V

Note:

[1] T

=+25 to

+150

[2] Silicon limited current only.

[3] Package limited current.

[4] Repetitive rating; pulse width limited by maximum junction temperature.

[5] Pulse width≤380µs; duty cycle≤2%.

Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PI

Page 3 / 9

Rev. A.2018

PIP8205

Typical Characteristics

Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PI

Page 4 / 9

Rev. A.2018

PIP8205

Typical Characteristics

Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PI

Page 5 / 9

Rev. A.2018

PIP8205

Typical Characteristics

Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PI

Page 6 / 9

Rev. A.2018

PIP8205

Test Circuits and

Waveforms

Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit

Fig. 1.2 Peak Diode Recovery dv/dt Waveforms

Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PI

Page 7 / 9

Rev. A.2018

PIP8205

Test Circuits and

Waveforms

(Cont.)

Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PI

Page 8 / 9

Rev. A.2018

PIP8205

Disclaimers:

Perfect Intelligent Power Semiconductor Co., Ltd (PIP) reserves the right to make changes without notice in order to improve

reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest

relevant information before orders and should verify that such information is current and complete. All products are sold subject

to PIP’s terms and conditions supplied at the time of order acknowledgement.

Perfect Intelligent Power Semiconductor Co., Ltd warrants performance of its hardware products to the specifications at the time

of sale, Testing, reliability and quality control are used to the extent PIP deems necessary to support this warrantee. Except where

agreed upon by contractual agreement, testing of all parameters of each product is not necessarily performed.

Perfect Intelligent Power Semiconductor Co., Ltd does not assume any liability arising from the use of any product or circuit

designs described herein. Customers are responsible for their products and applications using PIP’s components. To minimize

risk, customers must provide adequate design and operating safeguards.

Perfect Intelligent Power Semiconductor Co., Ltd does not warrant or convey any license either expressed or implied under its

patent rights, nor the rights of others. Reproduction of information in PIP’s data sheets or data books is permissible only if

reproduction is without modification or alteration. Reproduction of this information with any alteration is an unfair and deceptive

business practice. Perfect Intelligent Power Semiconductor Co., Ltd is not responsible or liable for such altered documentation.

Resale of PIP’s products with statements different from or beyond the parameters stated by Perfect Intelligent Power

Semiconductor Co., Ltd for that product or service voids all express or implied warrantees for the associated PIP’s product or

service and is unfair and deceptive business practice. Perfect Intelligent Power Semiconductor Co., Ltd is not responsible or liable

for any such statements.

Life Support

Policy:

Perfect Intelligent Power Semiconductor Co., Ltd’s products are not authorized for use as critical components in life support

devices or systems without the expressed written approval of Perfect Intelligent Power Semiconductor Co., Ltd.

As used herein:

1. Life support devices or systems are devices or systems which:

a. are intended for surgical implant into the human body,

b. support or sustain life,

c. whose failure to perform when properly used in accordance with instructions

for used provided in the labeling, can be reasonably expected to result in significant

injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PI

Page 9 / 9

Rev. A.2018

PIP-PIP8205-Z6

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