PIP-SPTA60R130E

SPTA60R130E  

600V N-ch Multi-Epi Super-Junction MOSFET  

BV

DSS  

R

DS(ON),typ.  

0.11Ω  

I

D  

General Features  

@

TjMAX  

‹

‹

‹

‹

‹

Multi-Epi Process  

650V  

25A  

Proprietary New Super-Junction

T

e

chnology  

R

DS(ON),typ.

=0.11Ω@V

GS

=10V  

Low Gate Charge Minimize Switching Loss  

Fast Recovery Body Diode  

Applications  

‹

‹

‹

Adaptor  

Charger  

SMPS Standby Power  

G

D

S

TO-220F  

Package No to Scale  

Ordering Information  

Part Number  

Package  

Brand  

SPTA60R130E  

TO-220F  

Absolute Maximum Ratings  

T

C

=25  

unless otherwise specified  

Value  

Symbol  

Parameter  

Drain-to-Source Voltage  

Unit  

SPTA60R130E  

V

DSS  

V

GSS  

600  

±20  

±30  

25  

15  

75  

Gate source voltage (static)  

V

A

Gate source voltage (dynamic) AC (f>1Hz)  

Continuous Drain Current @ T

C

= 25ºC  

Continuous Drain Current @ T

C

= 100ºC  

Pulsed Drain Current at V

GS

=10V

[1]  

Reverse diode dv/dt  

I

D  

I

DM  

dv/dt  

d

iF

/dt  

15  

50  

V/ns  

A/us  

Maximum diode commutation speed  

E

AS  

P

D  

Single Pulse Avalanche Energy

[2]  

898  

35  

mJ  

W

Power Dissipation  

T

J

& T

STG  

Operating and Storage Temperature Range  

-55 to 150  

Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.  

Thermal Characteristics  

Max. Value  

Symbol  

Parameter  

Unit  

SPTA60R130E  

R

θJC  

R

θJA  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Junction-to-Ambient  

3.57  

/W  

100  

©2019 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP  

Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PI

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.  

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SPTA60R130E  

Electrical Characteristics  

OFF Characteristics  

T

J

=25  

unless otherwise specified  

Symbol  

Parameter  

Min. Typ. Max. Unit  

Test Conditions  

BV

DSS  

Drain-to-Source Breakdown Voltage  

600  

—  

—  

V

V

GS

=0V, I

D

=250uA  

I

DSS  

Drain-to-Source Leakage Current  

Gate-to-Source Leakage Current  

—  

—  

—  

—  

—  

—  

1

uA  

V

DS

=600V, V

GS

=0V  

V

GS

=+30V, V

DS

=0V  

V

GS

=-30V, V

DS

=0V  

+100  

-100  

I

GSS  

nA  

ON Characteristics  

Symbol  

T

J

=25  

unless otherwise specified  

Parameter  

Min. Typ. Max. Unit  

Test Conditions  

Static Drain-to-Source  

On-Resistance

[3]  

R

DS(ON)  

V

GS(TH)  

gfs  

—  

2.5  

—  

0.11 0.15  

Ω

V

S

V

GS

=10V, I

D

=10.0A  

V

DS

=V

GS

, I

D

=250uA  

Gate Threshold Voltage  

—  

4.5  

—  

Forward Transconductance

[3]  

10.5  

V

DS

=10V,I =5.0A  

D

Dynamic Characteristics  

Essentially independent of operating temperature  

Symbol  

Parameter  

Min. Typ. Max. Unit  

Test Conditions  

V

GS

=0V,  

V

DS

=50V,  

f=10KH

Z  

C

iss  

Input Capacitance  

—  

—  

—  

—  

—  

—  

—  

1966  

208  

5.8  

48  

—  

—  

—  

—  

—  

—  

—  

pF  

Ω

C

oss  

Output Capacitance  

R

G  

Gate resistance (Intrinsic)  

Total Gate Charge  

f = 1.0MHz Open Drain  

Q

g  

Q

gs  

Gate-to-Source Charge  

Gate-to-Drain (Miller) Charge  

Gate plateau voltage  

8.5  

8.5  

6.3  

nC  

V

V

DD

=400V,  

I

D

=11.3A, V

GS

=0 to 13V  

Q

gd  

V

plateau  

Resistive Switching Characteristics  

Essentially independent of operating temperature  

Symbol  

Parameter  

Min. Typ. Max. Unit  

Test Conditions  

td

(ON)  

Turn-on Delay Time  

—  

—  

—  

—  

38  

28  

67  

21  

—  

—  

—  

—  

V

DD

=400V,  

I

D

=11.3A,  

V

GS

=10V  

Rg=1.7Ω  

t

rise  

td

(OFF)  

fall  

Rise Time  

pF  

Turn-Off Delay Time  

Fall Time  

t

©2019 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP  

Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PI

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SPTA60R130E  

Source-Drain Body Diode Characteristics  

T

J

=25  

unless otherwise specified  

Symbol  

Parameter  

Continuous Source Current

[2]  

Pulsed Source Current

[2]  

Min  

—  

Typ. Max. Unit  

Test Conditions  

Maximum Ratings  

I

S

=3.8A, V

GS

=0V  

I

SD  

—  

—  

25  

75  

A

I

SM  

—  

V

SD  

Diode Forward Voltage  

—  

—  

—  

—  

—  

1.2  

—  

V

ns  

uC  

A

t

rr  

Reverse Recovery Time  

Reverse Recovery Charge  

PeakReverseRecoveryCurrent  

293  

3.9  

V

R

=400V,V

GS

=0V  

Q

rr  

—  

I

F  

=3.2A, di/dt =100A/μs  

I

rrm  

26.7  

—  

Note:  

[1] Repetitive Rating: Pulse width limited by maximum junction temperature  

[2] L = 10mH, VDD= 80

V

, Starting T = 25°C  

[3] Pulse

T

est: Pulse width

 

380us, Duty Cycle

 

2%  

J

©2019 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP  

Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PI

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Rev. D .2019  

SPTA60R130E  

Test Circuits and

Waveforms  

Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit  

Fig. 1.2 Peak Diode Recovery dv/dt Waveforms  

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Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PI

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SPTA60R130E  

Test Circuits and

Waveforms

(Cont.)  

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Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PI

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SPTA60R130E  

Disclaimers:  

Perfect Intelligent Power Semiconductor Co., Ltd (PIP) reserves the right to make changes without notice in order to improve  

reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest  

relevant information before orders and should verify that such information is current and complete. All products are sold subject  

to PIP’s terms and conditions supplied at the time of order acknowledgement.  

Perfect Intelligent Power Semiconductor Co., Ltd warrants performance of its hardware products to the specifications at the time  

of sale, Testing, reliability and quality control are used to the extent PIP deems necessary to support this warrantee. Except where  

agreed upon by contractual agreement, testing of all parameters of each product is not necessarily performed.  

Perfect Intelligent Power Semiconductor Co., Ltd does not assume any liability arising from the use of any product or circuit  

designs described herein. Customers are responsible for their products and applications using PIP’s components. To minimize  

risk, customers must provide adequate design and operating safeguards.  

Perfect Intelligent Power Semiconductor Co., Ltd does not warrant or convey any license either expressed or implied under its  

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for any such statements.  

Life Support

Policy:  

Perfect Intelligent Power Semiconductor Co., Ltd’s products are not authorized for use as critical components in life support  

devices or systems without the expressed written approval of Perfect Intelligent Power Semiconductor Co., Ltd.  

As used herein:  

1. Life support devices or systems are devices or systems which:  

a. are intended for surgical implant into the human body,  

b. support or sustain life,  

c. whose failure to perform when properly used in accordance with instructions  

for used provided in the labeling, can be reasonably expected to result in significant  

injury to the user.  

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably  

expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.  

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Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PI

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Rev. D .2019