PJSEMI-2SA1213SQ-Y

Part #PJSEMI-2SA1213SQ-Y
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PJSEMI-2SA1213SQ-Y
2SA1213SQ  
PNP Transistor  
Features  
SOT-89  
⚫
⚫
⚫
Low Saturation Voltage  
High Speed Switching Time  
As Complementary Type of the NPN  
Transistor 2SC2873SQ is Recommended.  
Equivalent Circuit  
1.Base 2.Collector 3.
 
Emitter  
2
.Collector  
Marking Code :  
2SA1213SQ
–
O :
NX  
2SA1213SQ
–
Y :
NY  
1.Base  
3
. Emitt
er  
Absolute Maximum Ratings  
Ratings at 25
℃
ambient temperature unless otherwise specified.  
Parameter  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Symbol  
-V

CBO  

-V

CEO  

-V

EBO  

-I

C  

Value  
Unit  
V
50  
50  
V
5
V
Collector Current  
2
0.5  
A
Maximum Power Dissipation  
Junction
T
emperature  
P

D  

W
℃
℃
T

J  

150  
Storage
T
emperature Range  
T

STG  

-55 to +150  
Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Thermal Resistance Junction to Ambient  
R

θJA  

250  
℃
/W  
1 /
7
 
Revison
:
4.0 Feb
-202
2  

2SA1213SQ  
PNP Transistor  
Electrical Characteristics
 
(T

A

=25
℃
)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at V

CE

= -2 V, I

C

= -500 mA
 
Current Gain Group  
O
Y
70  
120  
20  
—  
—  
—  
140  
240  
—  
H

FE  

—  
at V

CE

= -2 V, I

C

= -2 A  
Collector Base Cutoff Current  
at V

CB

= -50 V  
-I

CBO  

—  
—  
—  
—  
100  
100  
—  
nA  
nA  
V
Emitter Base Cutoff Current  
at V

EB

= -5 V  
-I

EBO  

Collector Base Breakdown Voltage  
at I

C

= -100 μA  
-V

(BR)CBO  

-V

(BR)CEO  

-V

(BR)EBO  

-V

CE(sat)  

-V

BE(sat)  

F

T  

50  
50  
5
—  
Collector Emitter Breakdown Voltage  
at I

C

= -1 mA  
—  
—  
V
Emitter Base Breakdown Voltage  
at I

E

= -100 μA  
—  
—  
V
Collector Emitter Saturation Voltage  
at I

C

= -1 A, I

B

= -50 mA  
Base Emitter Saturation Voltage  
at I

C

= -1 A, I

B

= -50 mA  
Transition Frequency  
—  
—  
0.5  
1.2  
—  
V
—  
—  
V
100  
—  
—  
MHz  
pF  
at V

CE

= -2 V, I

C

= -500 mA  
Output Capacitance  
C

ob  

40  
—  
at V

CB

=
–
10 V,I

E

= 0, f = 1MHz  
2 /
7
 
Revison
:
4.0 Feb
-202
2  

2SA1213SQ  
PNP Transistor  
Typical Characteristic Curves  
-1000  
-800  
-600  
-400  
-200  
-0  
1000  
C
ommon  
E
mitter  
T

a

=25
℃  
C
ommon
E
mitter  
V

CE

=-2V  
-6mA  
-5.4mA  
-4.8mA  
-4.2mA  
300  
100  
T

a

=100
℃
 
-3.6mA  
-3mA  
-2.4mA  
-1.8mA  
T

a

=25
℃  
30  
10  
-1.2mA  
I

B

=-600uA  
-3  
-0.0  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
-1  
-10  
-100  
-1000 -2000  
-30  
-500  
C
ollector
-E
mitter
V
oltage
V

CE

(V)  
C
ollector
C
urrent
I

C

(mA)  
-1000  
-1000  
T

a

=25
℃  
-300  
-100  
T

a

=100
℃  
T

a

=100
℃  
T

a

=25
℃  
-30  
-10  
β
=20  
-200  
-1  
-300  
-30  
-300  
-10  
-100  
-1000  
-1  
-10  
-100  
-1000  
-3  
-30  
C
ollector
C
urrent
I

C

(mA)  
C
ollector
C
urrent
I

C

(mA)  
-1000  
1000  
f=1MHz  
I

E

=0/I

C

=0  
-300  
-100  
T

a

=25
℃  
300  
100  
C

ib  

T

a

=100
℃  
-30  
-10  
T

a

=25
℃  
C

ob  

30  
10  
-3  
-1  
V

CE

=-2V  
-20  
-0.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
-0.1  
-1  
-10  
-0.3  
-3  
R
everse
V
oltage
V

R

(V)  
B
ase
-E
mitter
V
olatge
V

BE

(V)  
3 /
7
 
Revison
:
4.0 Feb
-202
2  

2SA1213SQ  
PNP Transistor  
Package Outline  
SOT-89  
Dimensions in mm  
Ordering Information  
Device  
Package  
SOT-89  
Shipping  
1,000PCS/Reel&7inches  
3,000PCS/Reel&13inches  
2SA1213SQ  
4 /
7
 
Revison
:
4.0 Feb
-202
2  

2SA1213SQ  
PNP Transistor  
Conditions of Soldering and Storage  
Recommended condition of reflow soldering  
Recommended peak temperature is over 245

O

C. If peak temperature is below 245

O

C, you may adjust  
the following parameters:  
Time length of peak temperature (longer)  
Time length of soldering (longer)  
Thickness of solder paste (thicker)  
Conditions of hand soldering  
T
e
mperature: 370

O

C  
Time: 3s
 
max.  
Times: one time  
Storage conditions  
Temperature  
5 to 40

O

C  
Humidity  
30 to 80% RH  
Recommended period  
One year after manufacturing  
5 /
7
 
Revison
:
4.0 Feb
-202
2  

2SA1213SQ  
PNP Transistor  
P
ackage
S
pecifications  
The method of packaging (1,000PCS/Reel&7inches)  
Cover Tape  
1,000 pcs per reel  
SOT-89  
Carrier Tape  
8,000 pcs per box  
8 reels per box  
32,000 pcs per carton  
4 boxes per carton  
Embossed tape and reel data  
D
A
symbol  
Value(unit:mm)  
Φ179±1  
T1  
B
A
B
60.5±0.2  
E
C
D
E
15.3±0.3  
12.5~13.7  
Φ13.5±0.2  
Φ10.0±0.2  
2.7±0.2  
G
F
F
G
T1  
1.0±0.2  
Reel (
7
”)  
C
6 /
7
 
Revison
:
4.0 Feb
-202
2  

2SA1213SQ  
PNP Transistor  
P
ackage
S
pecifications  
The method of packaging (3,000PCS/Reel&13inches)  
3,000 pcs per reel  
SOT-89  
9,000 pcs per box  
3 reels per box  
36,000 pcs per carton  
4 boxes per carton  
Embossed tape and reel data  
B
A
T
symbol  
Value(unit:mm)  
Φ330±1  
A
B
12.7±0.5  
E
F
C
D
E
16.5±0.3  
D
Φ99.5
±
0.5  
Φ13.6±0.3  
2.8±0.3  
F
T1  
1.9±0.2  
C
Reel (
13
”)  
7
/
7  
Revison
:
4.0 Feb
-202
2