PJSEMI-BCX56SQ-16

BCX56SQ  

NPN Transistor  

SOT-89  

Features  







For AF driver and output stages  

High collector current  

Low collector-emitter saturation voltage  

Absolute Maximum Ratings

(

T

a

=25

℃

unless otherwise specified

)  

Parameter  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

100  

80  

Units  

Collector Base Voltage  

V

V

V

A

A

Collector Emitter Voltage  

Emitter Base Voltage  

Collector Current  

5

1

I

CM  

Peak Collector Current  

1.5  

0.5

(1)  

1.3

(2)  

P

tot  

W

Total Power Dissipation  

Junction

T

emperature  

℃

℃

T

J  

150  

T

stg  

Storage

T

emperature Range  

– 65 to + 150  

Note :1.Device mounted on an FR4 Printed-Circuit Board(PCB), single-sided copper, tin-plated and standard footprint.  

2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm

2  

Electrical Characteristics

(

T

a

=25

℃

unless otherwise specified

)  

Parameter  

Symbol  

Min.  

Typ.  

Max.  

Units  

DC Current Gain  

h

FE  

h

FE  

40  

63  

100  

25  

–

–

–

–

–

–

–

–

–

–

–

at V

CE

= 2 V, I

C

= 5 mA  

at V

CE

= 2 V, I

C

= 150 mA  

160  

250  

–

BCX56

SQ

-10  

BCX56

SQ

-16  

h

FE  

–

at V

CE

= 2 V, I

C

= 500m A  

h

FE  

–

I

CBO  

100  

100  

–

nA  

nA  

V

Collector Base Cutoff Current

at V

CB

= 30 V  

Emitter Base Cutoff Current at V

EB

= 5 V  

Collector Base Breakdown Voltage at I

C

= 100 µA  

I

EBO  

–

V

(BR)CBO  

100  

V

(BR)CEO  

V

(BR)EBO  

V

CE(sat)  

V

BE  

80  

–

–

–

–

V

V

Collector Emitter Breakdown Voltage at I

C

= 1 mA  

Emitter Base Breakdown Voltage at I

E

= 100 µA  

5

–

–

0.5  

1

V

Collector Emitter Saturation Voltage at I

C

= 500 mA, I

B

= 50 mA  

Base Emitter Voltage at V

CE

= 2

V

,

I

C

= 500 mA  

–

100  

–

–

V

f

T  

–

–

MHz  

pF  

Transition Frequency at V

CE

= 5

V

,

I

C

= 50 mA, f = 100 MHz  

Collector Capacitance at V

CB

= 10

V

, f = 1

M

Hz  

C

c  

6

–

1 / 3  

Revision

：

1.0 May-2018  

BCX56SQ  

NPN Transistor  

Typical Characteristic Curves  

Static Characteristics  

DC Current Gain  

1.8mA  

1.6mA  

1.4mA  

1.2mA  

1.0mA  

0.8mA  

0.6mA  

0.4mA  

I

B

=0.2 m

A

 

Collector Emitter Voltage V

C

E

(V)  

Collector Current I

C

(mA)  

Base Emitter Saturation Voltage  

Collector Emitter Saturation Voltage  

Base Emitter On Voltage  

Base Emitter Voltage V

BE

(V)  

C o l l e c t o r

 

C u r r e n t

 

I

C

( mA)  

Collector Output Capacitance  

Collector Base Voltage V

CB

(V)  

Power derating curves  

2 / 3  

Revision

：

1.0 May-2018  

BCX56SQ  

NPN Transistor  

Package Outline  

SOT-

89  

Dimensions in mm  

Ordering information  

Device  

Package  

SOT-89  

Shipping  

1000PCS/Reel&

T

ape  

BCX56SQ  

3 / 3  

Revision

：

1.0 May-2018