PJSEMI-FMMT491
| Part # | PJSEMI-FMMT491 |
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FMMT
491
NP
N
Transistor
Features
Low equivalent on-resistance
Be complementaty with FMMT591
SOT-23
(TO-236)
1.Base 2.Emitter 3.Collector
Marking: 491
Absolute Maximum Ratings
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
V
CBO
8
0
V
Collector Base Voltage
Collector Emitter Voltage
V
CEO
6
0
V
V
EBO
I
C
5
1
2
V
A
A
Emitter Base Voltage
Collector Current
I
C
M
Peak Pulse
Current
P
D
T
J
50
0
150
mW
℃
Power Dissipation
Junction Temperature
Storage Temperature Range
T
STG
-55 to 150
℃
1 /
4
Revis
i
on
：
1.0
Feb
-201
9
FMMT
491
NP
N
Transistor
Electrical Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
Note1
at V
CE
=
5
V, I
C
= 1 mA
at V
CE
=
5
V, I
C
=
5
00 mA
at V
CE
=
5
V,
I
C
=
1
A
at V
CE
= 5 V, I
C
= 2 A
–
–
1
00
1
0
0
80
H
FE
–
–
–
30
0
–
–
–
30
Collector Base Cutoff Current
at V
CB
=
60
V
I
CBO
–
–
–
–
–
–
–
100
nA
nA
V
Emitter Base Cutoff Current
at V
E
B
=
5.6
V
I
EBO
100
Collector Base Breakdown Voltage
at I
C
= 100 μA
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
8
0
6
0
5
–
–
–
Collector Emitter Breakdown Voltage
at I
C
=
10
mA
V
Emitter Base Breakdown Voltage
at I
E
= 100 μA
V
Collector Emitter Saturation Voltage
note1
at I
C
=
5
00 mA, I
B
=
5
0 mA
m
V
V
CE(sat)
2
50
5
0
0
–
–
at
I
C
=
1
A,
I
B
=
10
0 m
A
Base Emitter Saturation Voltage
note1
at I
C
=
1
A, I
B
=
10
0 mA
Base Emitter Voltage
note1
V
BE(sat)
V
BE(on)
F
T
–
–
–
1.
1
1
V
V
–
–
at V
CE
=
5
V, I
C
=
1
A
Transition Frequency
at V
CE
= 10 V, I
C
= 50 mA
, f= 100MHz
–
MHz
1
5
0
Collector Output Capacitance
at V
C
B
= 10 V,
f= 1MHz
C
ob
–
1
0
pF
–
Note1: Measured under pulsed conditions, Pulse width≤300uS, Duty cycle≤2%.
2 /
4
Revis
i
on
：
1.0
Feb
-201
9
FMMT
491
NP
N
Transistor
400
300
200
100
1000
100
10
COMMON EMITTER
T
a
=25
℃
2mA
1.8mA
Ta=100
o
C
1.6mA
1.4mA
Ta=25
o
C
1.2mA
1mA
0.8mA
0.6mA
0.4mA
COMMON EMITTER
V
CE
=5V
I
B
=0.2mA
0
0
2
4
6
8
10
1
10
100
1000
2000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
1000
1200
1000
800
β
=10
Ta=25
℃
100
600
Ta=100
℃
Ta=100
℃
400
Ta=25
℃
β
=10
10
200
1
10
100
1000
1000
60
1
10
100
1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
1000
1000
COMMON EMITTER
V
CE
=5V
f=1MHz
I
E
=0/ I
C
=0
Ta=25
o
C
C
ib
100
10
1
100
10
1
C
ob
T
a
=100
℃
T
a
=25
℃
200
400
600
800
0.1
1
10
20
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE
V
BE
(mV)
6
00
500
50
0
4
00
30
0
2
00
100
COMMON EMITTER
CE
=5V
10
0
V
T
a
=25
o
C
10
0
3
10
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
Ta (
℃
)
3
/
4
Revis
i
on
：
1.0
Feb
-201
9
FMMT
491
NPN
Transistor
Package Outline(SOT-23)
Dimensions in millimeter
Symbol
Min.
0.900
0.000
Typ.
1.025
0.050
Max.
1.150
0.100
A
A1
b
c
0.300
0.080
2.800
0.400
0.115
2.900
0.500
0.150
3.000
D
E
HE
e
1.200
2.250
1.800
1.300
2.400
1.400
2.550
2.000
1.900
L1
L
0.550REF
0.300
0°
0.500
8°
θ
Ordering Information
Device
Package
Reel Dimension (inch)
Shipping
FMMT
491
SOT-23
7
3,000
4
/
4
Revis
i
on
：
1.0
Feb
-201
9
