PJSEMI-FMMT591
| Part # | PJSEMI-FMMT591 |
Download  | PJSEMI-FMMT591 |
FMMT
591
PNP Transistor
Features
Low equivalent on-resistance
Be complementary with FMMT491
SOT-23
(TO-236)
1.Base 2.Emitter 3.Collector
Marking: 591
Absolute Maximum Ratings
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
-V
CBO
8
0
V
Collector Base Voltage
Collector Emitter Voltage
-V
CEO
6
0
V
-V
EBO
-I
C
5
1
2
V
A
A
Emitter Base Voltage
Collector Current
-I
C
M
Peak Pulse
Current
P
D
T
J
50
0
150
mW
℃
Power Dissipation
Junction Temperature
Storage Temperature Range
T
STG
-55 to 150
℃
1 /
4
Revis
i
on
：
1.0
Feb
-201
9
FMMT
591
PNP Transistor
Electrical Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
note1
–
–
–
–
1
00
–
at -V
CE
=
5
V, -I
C
= 1 mA
at -V
CE
=
5
V, -I
C
=
5
00 mA
at
–
V
CE
=
5
V,
-I
C
=
1
A
at -V
CE
= 5 V, -I
C
= 2 A
30
0
1
0
0
8
0
H
FE
–
–
–
15
Collector Base Cutoff Current
at -V
CB
=
60
V
-I
CBO
–
–
–
–
–
–
–
100
nA
nA
V
Emitter Base Cutoff Current
at -V
E
B
=
5.6
V
-I
EBO
100
Collector Base Breakdown Voltage
at -I
C
= 100 μA
–
V
(BR)CBO
–
V
(BR)CEO
–
V
(BR)EBO
8
0
6
0
5
–
–
–
Collector Emitter Breakdown Voltage
at -I
C
=
10
mA
V
Emitter Base Breakdown Voltage
at -I
E
= 100 μA
V
Collector Emitter Saturation Voltage
note1
at -I
C
=
5
00 mA, -I
B
=
5
0 mA
V
CE(sat)
–
–
–
30
0
60
0
m
V
at
-I
C
=
1
A,
-I
B
=
10
0 m
A
Base Emitter Saturation Voltage
note1
at
–
I
C
=
1
A,
–
I
B
=
10
0 mA
Base Emitter Voltage
note1
–
V
BE(sat)
–
V
BE(on)
F
T
–
–
–
1.
2
1
V
V
–
–
at -V
CE
=
5
V, -I
C
=
1
A
Transition Frequency
at -V
CE
= 10 V, -I
C
= 50 mA
, f= 100MHz
–
MHz
1
5
0
Collector Output Capacitance
at -V
C
B
= 10 V,
f= 1MHz
C
ob
–
1
0
pF
–
Note1: Measured under pulsed condition, Pulse width ≤ 300uS, Duty cycle2%.
2 /
4
Revis
i
on
：
1.0
Feb
-201
9
FMMT
591
PNP Transistor
-400
-350
-300
-250
-200
-150
-100
-1000
-100
-10
-2m
A
-1.8m
A
-1.6m
A
-1.4m
Ta=100
o
Ta=2
5
o
C
A
-1.2mA
C
-1.0m
A
-800uA
-600uA
-400u
A
I
B
=-200u
A
V
CE
=-5V
-50
-0
-2
-4
-6
-8
-10
-12
-1
-10
-100
-1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
-1000
-100
-2000
-1000
Ta=25
℃
Ta=100
℃
Ta=100
℃
Ta=25
℃
-10
β
=1
0
β
=10
-1
-0. 1
-100
-0.1
-1
-10
–
10
0
-1000
-1
-10
–
100
-1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
-1000
-800
-600
-400
1000
f=1MHz
I
E
=0/ I
C
=0
Ta=25
o
C
Ta=25
℃
100
Ta=100
C
i
b
℃
-200
-0
C
o
b
VCE=-5V
10
-100
-1000
0
2
4
6
1
0
16
18
20
-1
-10
8
1
2
1
4
-0.1
COLLCETOR CURRENT
I
C
(mA)
REVERSE VOLTAGE
V
R
(V)
6
00
50
0
4
00
500
100
30
0
2
00
10
0
VCE=-10V
Ta = 25
℃
10
0
-60
0
25
50
75
100
125
150
-3
-10
AMBIENT TEMPERATURE
Ta (
℃
)
COLLECTOR CURRENT
I
C
(mA)
3
/
4
Revis
i
on
：
1.0
Feb
-201
9
FMMT
591
PNP Transistor
Package Outline(SOT-23)
Dimensions in millimeter
Symbol
Min.
0.900
0.000
Typ.
1.025
0.050
Max.
1.150
0.100
A
A1
b
c
0.300
0.080
2.800
0.400
0.115
2.900
0.500
0.150
3.000
D
E
HE
e
1.200
2.250
1.800
1.300
2.400
1.400
2.550
2.000
1.900
L1
L
0.550REF
0.300
0°
0.500
8°
θ
Ordering Information
Device
Package
Reel Dimension (inch)
Shipping
FMMT
591
SOT-23
7
3,000
4
/
4
Revis
i
on
：
1.0
Feb
-201
9
