PJSEMI-MMBT3904

MMBT3904  

NPN Transistor  

Features  





For Switching and AF Amplifer Applications.  

Silicon Epitaxial Chip.  

SOT-23  

(TO-236)  

1.Base 2.Emitter 3.Collector  

Absolute Maximum Ratings (T

A

= 25

℃

)  

Parameter  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

Unit  

V

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

60  

40  

V

6

200  

V

Collector Current  

mA  

mW  

Power Dissipation  

P

D  

350  

O

Junction

T

emperature  

Storage

T

emperature Range  

T

J  

150  

C

O

T

STG  

– 55 to + 150  

C

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MMBT3904  

NPN Transistor  

Electrical Characteristics at T

A

= 25

℃  

Parameter  

Symbol  

Min.  

Max.  

Unit  

DC Current Gain  

at V

CE

= 1

V

,

I

C

= 0.1 mA  

at V

CE

= 1

V

,

I

C

= 1 mA  

at V

CE

= 1

V

,

I

C

= 10 mA  

at V

CE

= 1

V

,

I

C

= 50 mA  

at V

CE

= 1

V

,

I

C

= 100 mA  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

40  

70  

100  

60  

–

–

–

–

–

–

–

300  

–

–

30  

Collector Base Cutoff Current  

at V

CB

= 30 V  

I

CBO  

–

–

50  

50  

–

nA  

nA  

V

Emitter Base Cutoff Current  

at V

EB

= 6 V  

I

EBO  

Collector Base Breakdown Voltage  

at I

C

= 10 µA  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

60  

40  

6

Collector Emitter Breakdown Voltage  

at I

C

= 1 mA  

–

V

Emitter Base Breakdown Voltage  

at I

E

= 10 µA  

–

V

Collector Emitter Saturation Voltage  

at I

C

= 10 mA, I

B

= 1 mA  

at I

C

= 50 mA, I

B

= 5 mA  

–

–

0.2  

0.3  

V

V

V

CE(sat)  

V

CE(sat)  

Base Emitter Saturation Voltage  

at I

C

= 10 mA, I

B

= 1 mA  

at I

C

= 50 mA, I

B

= 5 mA  

0.65  

–

0.85  

0.95  

V

V

V

BE(sat)  

V

BE(sat)  

Current Gain Bandwidth Product  

at V

CE

= 20

V

,

I

C

= 10 mA, f = 100 MHz  

f

T  

C

ob  

t

d  

300  

–

MHz  

pF  

ns  

Collector Output Capacitance  

at V

CB

= 5

V

,

I

E

= 0, f = 1 MHz  

–

–

–

–

–

4

Delay Time  

35  

35  

200  

50  

at V

CC

= 3

V

,

V

BE

= 0.5

V

,

I

C

= 10 mA, I

B1

= 1 mA  

Rise Time  

t

r  

ns  

at V

CC

= 3

V

,

V

BE

= 0.5

V

,

I

C

= 10 mA, I

B1

= 1 mA  

Storage Time  

at V

CC

= 3

V

,

I

C

= 10 mA, I

B1

= -I

B2

= 1 mA  

t

s  

ns  

Fall Time  

t

f  

ns  

at V

CC

= 3

V

,

I

C

= 10 mA, I

B1

= -I

B2

= 1 mA  

Revis

i

on

：

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MMBT3904  

NPN Transistor  

Electrical Characteristics Curves  

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on

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MMBT3904  

NPN Transistor  

Package Outline (SOT-23)  

Dimensions in millimeter  

Symbol  

Min.  

0.900  

0.000  

Typ.  

1.025  

0.050  

Max.  

1.150  

0.100  

A

A1  

b

c

0.300  

0.080  

2.800  

0.400  

0.115  

2.900  

0.500  

0.150  

3.000  

D

E

H

E  

e

1.200  

2.250  

1.800  

1.300  

2.400  

1.400  

2.550  

2.000  

1.900  

L1  

L

0.550REF  

0.300  

0°  

0.500  

8°  

θ

Ordering Information  

Device  

Package  

Reel Dimension (inch)  

Shipping

Quantity  

MMBT

3904  

SOT-23  

7

3,000  

Revis

i

on

：

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