PJSEMI-MMBT3906
| Part # | PJSEMI-MMBT3906 |
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MMBT390
6
PN
P
Transistor
Features
SOT-23
(TO-236)
For Switching and AF Amplifer Applications.
Silicon Epitaxial Chip.
1.Base 2.Emitter 3.Collector
Marking: 3E
Absolute Maximum Ratings (T
A
= 25
℃
)
Parameter
Symbol
–
V
CBO
–
V
CEO
–
V
EBO
–
I
C
Value
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
4
0
40
V
6
200
V
Collector Current
mA
mW
Power Dissipation
P
D
350
O
Junction
T
emperature
Storage
T
emperature Range
T
J
150
C
O
T
STG
– 55 to + 150
C
1 / 4
Revis
i
on
：
1.0 Oct-2017
MMBT390
6
PN
P
Transistor
Electrical Characteristics at T
A
= 25
℃
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -V
CE
= 1
V
,
–
I
C
= 0.1 mA
at -V
CE
= 1
V
,
–
I
C
= 1 mA
at -V
CE
= 1
V
,
–
I
C
= 10 mA
at -V
CE
= 1
V
,
–
I
C
= 50 mA
at -V
CE
= 1
V
,
–
I
C
= 100 mA
h
FE
h
FE
h
FE
h
FE
h
FE
60
80
100
60
–
–
–
–
–
–
–
300
–
–
30
Collector Base Cutoff Current
at -V
CB
= 30 V
-I
CBO
–
–
50
50
–
nA
nA
V
Emitter Base Cutoff Current
at -V
EB
= 6 V
-I
EBO
Collector Base Breakdown Voltage
at -I
C
= 10 µA
Collector Emitter Breakdown Voltage
at -I
C
= 1 mA
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
40
40
6
–
V
Emitter Base Breakdown Voltage
at -I
E
= 10 µA
–
V
Collector Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
=1 mA
at -I
C
= 50 mA, -I
B
= 5 mA
-V
CE(sat)
-V
CE(sat)
–
–
0.25
0.4
V
V
Base Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
= 1 mA
at -I
C
= 50 mA, -I
B
= 5 mA
-V
BE(sat)
-V
BE(sat)
0.65
–
0.85
0.95
V
V
Current Gain Bandwidth Product
at -V
CE
= 20
V
,
–
I
C
= 10 mA, f = 100 MHz
f
T
C
ob
t
d
250
–
MHz
pF
ns
Output Capacitance
at -V
CB
= 5
V
, I
E
= 0, f = 1 MHz
–
–
–
–
–
4.5
35
Delay Time
at -V
CC
= 3
V
,
–
V
BE
= 0.5
V
,
–
I
C
= 10 mA, -I
B1
= 1 mA
Rise Time
t
r
35
ns
at -V
CC
= 3
V
,
–
V
BE
= 0.5
V
,
–
I
C
= 10 mA, -I
B1
= 1 mA
Storage Time
at -V
CC
= 3
V
,
–
I
C
= 10 mA, -I
B1
= I
B2
= 1 mA
t
s
225
75
ns
Fall Time
t
f
ns
at -V
CC
= 3
V
,
–
I
C
= 10 mA, -I
B1
= I
B2
= 1 mA
2 / 4
Revis
i
on
：
1.0 Oct-2017
MMBT390
6
PN
P
Transistor
Electrical Characteristics Curves
Power Dissipation vs Ambient Temperature
300
250
200
150
100
50
0
0
25
100
125
50
75
150
O
Ambient Temperature: Ta ( C)
3 / 4
Revis
i
on
：
1.0 Oct-2017
MMBT390
6
PN
P
Transistor
Package Outline (SOT-23)
Dimensions in millimeter
Symbol
Min.
0.900
0.000
Typ.
1.025
0.050
Max.
1.150
0.100
A
A1
b
c
0.300
0.080
2.800
0.400
0.115
2.900
0.500
0.150
3.000
D
E
H
E
e
1.200
2.250
1.800
1.300
2.400
1.400
2.550
2.000
1.900
L1
L
0.550REF
0.300
0°
0.500
8°
θ
Ordering Information
Device
MMBT
390
6
Package
SOT-23
Reel Dimension (inch)
Shipping
Quantity
7
3,000
4 / 4
Revis
i
on
：
1.0 Oct-2017
