PJSEMI-MMBT5401

MMBT

5401  

PN

P

Transistor  

Features  



For High Voltage Amplifer Applications.  

Silicon Epitaxial Chip.  



SOT-23  

(TO-236)  

1.Base 2.Emitter 3.Collector  

Absolute Maximum Ratings (T

A

= 25

℃

)  

Parameter  

Symbol  

–

V

CBO  

–

V

CEO  

–

V

EBO  

–

I

C  

Value  

Unit  

V

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

16

0  

15

0  

V

5

6

00  

V

Collector Current  

mA  

mW  

Power Dissipation  

P

D  

350  

O

Junction

T

emperature  

Storage

T

emperature Range  

T

J  

150  

C

O

T

STG  

– 55 to + 150  

C

Revis

i

on

：

1.0 Oct-2017  

1 / 4  

MMBT

5401  

PN

P

Transistor  

Electrical Characteristics at T

A

= 25

℃  

Parameter  

Symbol  

Min.  

Max.  

Unit  

DC Current Gain  

at -V

CE

= 5

V

,

–

I

C

= 1 mA  

at -V

CE

= 5

V

,

–

I

C

= 10 mA  

at -V

CE

= 5

V

,

–

I

C

= 50 mA  

h

FE  

h

FE  

h

FE  

50  

60  

50  

–

240  

–

–

–

–

Collector Base Cutoff Current  

at -V

CB

= 120 V  

-I

CBO  

–

–

50  

50  

–

nA  

nA  

V

Emitter Base Cutoff Current  

at -V

EB

= 3 V  

-I

EBO  

Collector Base Breakdown Voltage  

at -I

C

= 100 µA  

-V

(BR)CBO  

-V

(BR)CEO  

-V

(BR)EBO  

160  

150  

5

Collector Emitter Breakdown Voltage  

at -I

C

= 1 mA  

–

V

Emitter Base Breakdown Voltage  

at -I

E

= 10 µA  

V

Collector Emitter Saturation Voltage  

at -I

C

= 10 mA, -I

B

= 1 mA  

at -I

C

= 50 mA, -I

B

= 5 mA  

-V

CE(sat)  

–

–

0.2  

0.5  

V

V

Base Emitter Saturation Voltage  

at -I

C

= 10 mA, -I

B

= 1 mA  

at -I

C

= 50 mA, -I

B

= 5 mA  

-V

BE(sat)  

–

–

1

1

Gain Bandwidth Product  

at -V

CE

= 10

V

,

–

I

C

= 10 mA, f = 100 MHz  

f

T  

100  

–

300  

6

MHz  

pF  

Output Capacitance  

at -V

CB

=10

V

, f = 1

M

Hz  

C

ob  

Revis

i

on

：

1.0 Oct-2017  

2 / 4  

MMBT

5401  

PN

P

Transistor  

Electrical Characteristics Curves  

500  

400  

300  

200  

100  

0

25  

200  

0

100  

150  

O

Am b

i

ent

 

Tem perature:

 

Ta ( C)  

Fig. 1

 

Power Derating Curve  

Revis

i

on

：

1.0 Oct-2017  

3 / 4  

MMBT

5401  

PN

P

Transistor  

Package Outline (SOT-23)  

Dimensions in millimeter  

Symbol  

Min.  

0.900  

0.000  

Typ.  

1.025  

0.050  

Max.  

1.150  

0.100  

A

A1  

b

c

0.300  

0.080  

2.800  

0.400  

0.115  

2.900  

0.500  

0.150  

3.000  

D

E

H

E  

e

1.200  

2.250  

1.800  

1.300  

2.400  

1.400  

2.550  

2.000  

1.900  

L1  

L

0.550REF  

0.300  

0°  

0.500  

8°  

θ

Ordering Information  

Device  

Package  

Reel Dimension (inch)  

Shipping

Quantity  

MMBT

5401  

SOT-23  

7

3,000  

Revis

i

on

：

1.0 Oct-2017  

4 / 4