PJSEMI-MMBT9013G
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MMBT9013
NPN Transistor
Features
SOT-23
(TO-236)
For Switching and Amplifier Applications.
As Complementary Type of the PNP Transistor
MMBT9012 is Recommended.
1.Base 2.Emitter 3.Collector
Absolute Maximum Ratings
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
V
CBO
40
V
Collector Base Voltage
Collector Emitter Voltage
V
CEO
V
EBO
I
C
30
5
V
V
Emitter Base Voltage
Collector Current
500
200
mA
mW
P
D
Power Dissipation
T
J
℃
℃
Junction Temperature
150
T
STG
Storage Temperature Range
-55 to 150
Electrical Characteristics
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at V
CE
= 1 V, I
C
= 50 mA
Current Gain Group
100
160
40
–
–
250
400
–
G
H
H
FE
at V
CE
= 1 V, I
C
= 500 mA
Collector Base Cutoff Current
at V
CB
= 35 V
I
CBO
I
EBO
–
–
–
100
nA
nA
V
Collector Base Cutoff Current
at V
CB
= 5 V
–
100
Emitter Base Breakdown Voltage
at I
C
= 100 μA
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
V
BE
40
30
5
–
–
–
–
Collector Emitter Breakdown Voltage
at I
C
= 1 mA
–
V
Emitter Base Breakdown Voltage
at I
E
= 100 μA
–
–
V
Collector Emitter Saturation Voltage
at I
C
= 500 mA, I
B
= 50 mA
–
0.6
1
V
Base Emitter Saturation Voltage
at I
C
= 500 mA, I
B
= 50 mA
–
–
V
–
Base Emitter Voltage
at V
CE
= 1
V
,
I
C
= 100 mA
–
1
V
Transition Frequency
at V
CE
= 6 V, I
C
= 20 mA
F
T
100
–
MHz
–
1 / 3
Revis
i
on
：
1.0 Oct-2017
MMBT9013
NPN Transistor
Electrical Characteristics Curves
2 / 3
Revis
i
on
：
1.0 Oct-2017
MMBT9013
NPN Transistor
Package Outline(SOT-23)
Dimensions in millimeter
Symbol
Min.
0.900
0.000
Typ.
1.025
0.050
Max.
1.150
0.100
A
A1
b
c
0.300
0.080
2.800
0.400
0.115
2.900
0.500
0.150
3.000
D
E
HE
e
1.200
2.250
1.800
1.300
2.400
1.400
2.550
2.000
1.900
L1
L
0.550REF
0.300
0°
0.500
8°
θ
Device
MMBT9013
Package
SOT-23
Reel Dimension (inch)
Shipping
3,000
7
3 / 3
Revis
i
on
：
1.0 Oct-2017
