PJSEMI-MMDT3906SG
| Part # | PJSEMI-MMDT3906SG |
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MMDT
3906
SG
Double PNP Transistors
Features
SOT-23-6
For switching and amplifier applications
4.
C2
5.
E1
6.
C1
3.
B2
2.
E2
Equivalent Circuit
1.
B1
Marking
Code
390
6
Absolute Maximum Ratings
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
Value
Unit
V
40
40
V
6
V
Collector Current
200
1
mA
W
Maximum Power Dissipation
Junction
T
emperature
P
D
T
J
150
℃
℃
Storage
T
emperature Range
T
STG
-55 to +150
1 / 6
Revision
：
1.0 Mar-2021
MMDT
3906
SG
Double PNP Transistors
Electrical Characteristics
(T
A
=25
℃
)
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at V
CE
= -1 V, I
C
= -0.1 mA
at V
CE
= -1 V, I
C
= -1 mA
at V
CE
= -1 V, I
C
= -10 mA
at V
CE
= -1 V, I
C
= -50 mA
at V
CE
= -1 V, I
C
= -100 mA
Collector Base Cutoff Current
at V
CB
= -30V
60
80
—
—
H
FE
—
100
60
300
—
30
—
-I
CBO
—
—
.50
50
—
nA
nA
V
Emitter Base Cutoff Current
at V
EB
= -6 V
-I
EBO
Collector Base Breakdown Voltage
at I
C
= -10 μA
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
40
40
6
Collector Emitter Breakdown Voltage
at I
C
= -1 mA
—
V
Emitter Base Breakdown Voltage
at I
E
= -10 μA
—
V
Collector Emitter Saturation Voltage
at I
C
= -10 mA, I
B
= -1 mA
at I
C
= -50 mA, I
B
= -5 mA
Base Emitter Saturation Voltage
at I
C
= -10 mA, I
B
= -1 mA
at I
C
= -50 mA, I
B
= -5 mA
Transition Frequency
-V
CE(sat)
—
—
0.25
0.4
V
V
-V
BE(sat)
0.65
—
0.85
0.95
F
T
250
—
—
MHz
pF
at V
CE
= -20 V, I
C
= -10 mA,f = 100 MHz
Output Capacitance
C
ob
4.5
at V
CB
= -5 V, I
E
= 0, f = 1 MHz
2 / 6
Revision
：
1.0 Mar-2021
MMDT
3906
SG
Double PNP Transistors
Typical Characteristic Curves
I
C
/I
B
=10
T
a
=125
℃
T
a
=+25
℃
T
a
=-25
℃
V
CE
=1.0V
Collector Current
I
C
(mA)
Collector Current
I
C
(mA)
f=1MHz
I
C
/I
B
=10
C
ob
Collector-Base Voltage
V
CB
(V)
Collector Current
I
C
(mA)
3 / 6
Revision
：
1.0 Mar-2021
MMDT
3906
SG
Double PNP Transistors
Package Outline
SOT-23-6
Dimensions in mm
2
.
9
2
±
0
.
1
1
.
9
±0.1
10
12
R0.15MAX
0
.
35
±0.05
0
.
95
±0.1
R0.15MAX
10
12
Ordering Information
Device
Package
Shipping
MMDT3906SG
SOT-23-6
3,000PCS/Reel&7inches
4 / 6
Revision
：
1.0 Mar-2021
MMDT
3906
SG
Double PNP Transistors
Conditions of Soldering and Storage
Recommended condition of reflow soldering
Recommended peak temperature is over 245
O
C. If peak temperature is below 245
O
C, you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker)
Conditions of hand soldering
T
e
mperature: 370
O
C
Time: 3s
max.
Times: one time
Storage conditions
Temperature
5 to 40
O
C
Humidity
30 to 80% RH
Recommended period
One year after manufacturing
5 / 6
Revision
：
1.0 Mar-2021
MMDT
3906
SG
Double PNP Transistors
Package Specifications
The method of packaging
Cover Tape
3,000 pcs per reel
SOT-23-6
Carrier Tape
30,000 pcs per box
10 reels per box
120,000 pcs per carton
4 boxes per carton
Embossed tape and reel data
D
A
T2
T1
Symbol
Value (
unit: mm
)
Ø 177.8±1
2.7±0.2
A
B
B
Ø 13.5±0.2
Ø 54.5±0.2
C
E
C
E
12.3±0.3
9.6+2/-0.3
1.0±0.2
F
D
T1
T2
1.2±0.2
F
Reel (7”)
4.00±0.10
2.00
±
0.05
1.55
±
0.05
1.10±0.10
Pin1
4.00±0.10
Tap
e
(
8mm)
6 / 6
Revision
：
1.0 Mar-2021
