PJSEMI-PJ8205
| Part # | PJSEMI-PJ8205 |
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PJ8205
N-Channel Power MOSFET
Features
SOT-2
3-6
⚫
⚫
⚫
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
High Power and Current handing capability
4
5
3
6
2
1
Schematic Diagram
Drain
1
Drain
2
2
5
6
4
Gate
1
Gate
2
1
3
Source
2
Source
1
Absolute Maximum Ratings
Ratings at T
C
=25
℃
unless otherwise specified.
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
I
D
±12
5
V
A
Continuous Drain Current
Pulsed Drain Current
Note1
I
DM
P
D
25
1.25
A
Power Dissipation
W
°C
Junction and Storage
T
emperature Range
T
J
, T
STG
150, -55 to 150
Thermal Characteristics
Parameter
Symbol
Typ.
Units
Maximum Junction-to-Ambient
Note2
R
θJA
100
°C/W
1 / 5
Revision
：
1.0 May-2019
PJ8205
N-Channel Power MOSFET
Electrical Characteristics
T
C
=25
℃
unless otherwise specified.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Note3
BV
DSS
I
D
=250µA, V
GS
=0V
20
—
—
—
—
1
V
µA
nA
V
I
DSS
I
GSS
V
DS
=20
V
,
V
GS
=0V
V
DS
=0
V
,
V
GS
=±12V
V
GS
=V
DS
, I
D
= 250µA
—
—
±100
1.2
V
GS(th)
0.5
0.7
V
GS
=2.5
V
,
I
D
=
4
A
V
GS
=4.5
V
,
I
D
=5A
V
D
S
=5
V
,
I
D
=5A
—
—
2
5
20
10
32
2
5
—
mΩ
mΩ
Static Drain-Source On-Resistance
R
DS(ON)
Note3
Forward Transconductance
Note3
g
FS
—
S
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
—
—
—
5
50
125
64
—
—
—
pF
pF
pF
V
GS
=0
V
,
V
DS
=
10
V
,
f
=1MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Parameters
—
—
—
—
—
—
—
T
o
tal Gate Charge
Q
g
Q
gs
Q
gd
t
D(on)
t
r
—
—
—
—
—
—
—
9.5
2.1
1.4
9
nC
nC
nC
ns
ns
ns
ns
Gate Source Charge
Gate Drain Charge
V
GS
=4.5
V
,
V
DS
=10
V
,
I
D
=
5
A
Turn-On DelayTime
Turn-On Rise Time
10
32
24
V
GS
=4
V
,
V
DD
=10
V
,
I
D
=
5
A
R
GEN
=
10
Ω
Turn-Off DelayTime
t
D(off)
t
f
Turn-Off Fall Time
Source-Drain Diode Parameters
Body Diode Forward Voltage
V
SD
I
S
I
S
=
5
A, V
GS
=0V
—
—
1.2
5
V
A
0.
8
Body Diode Continuous Source
Current
—
Notes: 1. Repetitive rating: pulsed width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3
. Pulse width ≤ 300μs, duty cycle ≤ 2%
2 / 5
Revision
：
1.0 May-2019
PJ8205
N-Channel Power MOSFET
Electrical Characteristics Curves
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Drain Current
Power Dissipation
I
D
– Drain Current (A)
Vds Drain-Source Voltage (V)
Drain-Source On-Resistance
Output Characteristics
T
J
-Junction
T
e
mperature(
℃
)
Vgs Gate-Source Voltage (V)
Drain-Source On-Resistance
Transfer Characteristics
3 / 5
Revision
：
1.0 May-2019
PJ8205
N-Channel Power MOSFET
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Capacitance vs Vds
Rdson vs Vgs
Vsd Source-Drain Voltage (V)
Qg Gate Charge (nC)
Source- Drain Diode Forward
Gate Charge
Revision
：
1.0 May-2019
4 / 5
PJ8205
N-Channel Power MOSFET
Package Outline
SOT-23-6
Dimensions in mm
2
.
92
±
0
.
05
1
.
9
A
10
12
R0
.
15MAX
`4X
0
.
95
0
.
35
R0
.
15MAX
`4X
10
12
Ordering Information
Device
Package
Shipping
PJ8205
SOT-23
-6
30
00/Reel&Tape(7inch)
5 / 5
Revision
：
1.0 May-2019
