PJSEMI-PJM07P20SA
| Part # | PJSEMI-PJM07P20SA |
Download  | PJSEMI-PJM07P20SA |
PJM07P20SA
P
-Channel Enhancement Mode Power MOSFET
SOT-23
Features
⚫
⚫
Low gate charge
High density cell design for ultra low R
DS(ON)
⚫
V
DS
= –
20
V,I
D
= –
7
A
R
DS(on)
<
28
mΩ @V
GS
= –
10
V
1. Gate
2.Source 3.Drain
Marking
Code
:
MOA
Schematic Diagram
Applications
⚫
Load Switch and in PWM Applications
3.
Drain
1
.
Gate
2.
Source
Absolute Maximum Ratings
Ratings at 25
℃
ambient temperature unless otherwise specified.
Parameter
Drain-Source Voltage
Symbol
-V
DS
V
GS
-I
D
Value
Unit
V
20
Gate-Source Voltage
±12
V
Drain Current-Continuous
Drain Current-Pulsed
Note1
Maximum Power Dissipation
Junction Temperature
7
28
A
I
DM
A
P
D
1.2
W
°C
°C
T
J
150
Storage Temperature Range
T
STG
-55 to +150
Thermal Characteristics
Thermal Resistance,Junction-to-Ambient
R
θJA
104
°C/W
1 /
6
Revision
：
4.0 Oct
-202
2
PJM07P20SA
P
-Channel Enhancement Mode Power MOSFET
Electrical Characteristics
(Ta=25
℃
unless otherwise specified)
Parameter
Symbol
Test Condition
Min.
Typ. Max. Unit
Static Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Note2
-V
(BR)DSS
-I
DSS
V
GS
=0V,I
D
=-250μA
V
DS
=-20V,V
GS
=0V
V
GS
=±12V,V
DS
=0V
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V,I
D
=-4.1A
20
—
—
—
—
1
V
μA
nA
V
I
GSS
—
—
±100
1.0
28
-V
GS(th)
0.4
—
0.7
17
mΩ
Drain-Source On-Resistance
Note2
R
DS(on)
V
GS
=-4.5V,I
D
=-3A
V
DS
=-5V,I
D
=-2A
—
—
20
10
35
—
mΩ
S
Forward Transconductance
Note2
Dynamic Characteristics
Input Capacitance
g
FS
C
iss
C
oss
C
rss
—
—
—
2000
242
—
—
—
pF
pF
pF
V
DS
=-10V,V
GS
=0V,f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-on Delay Time
231
t
d(on)
t
r
t
d(off)
t
f
—
—
—
—
—
—
—
10
31
—
—
—
—
—
—
—
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=-10V, I
D
=-7A
V
GS
=-4.5V, R
GEN
=2.5Ω
Turn-off Delay Time
28
Turn-off Fall Time
8
Total Gate Charge
Q
g
Q
gs
Q
gd
15.3
2.2
4.4
V
DS
=-10V,
Gate-Source Charge
V
GS
=-4.5V,I
D
=-3A
Gate-Drain Charge
Source-Drain Diode Characteristics
Diode Forward Voltage
Diode Forward Current
-V
SD
-I
S
V
GS
=0V,I
S
=-7A
—
—
—
—
1.2
7
V
A
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2.
Pulse
T
e
st: Pulse width≤300μs, duty cycle≤2%
Note:
2
/
6
Revision
：
4.0 Oct
-202
2
PJM07P20SA
P
-Channel Enhancement Mode Power MOSFET
Typical Characteristic Curves
25
20
25
20
TA=-55
℃
-3
V
-4.5
V
25℃
15
10
15
10
-2
V
-2
.5V
125℃
5
0
5
0
V
GS
=
-1
.5
V
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
–
V
DS
Drain-Source Voltage (V)
–
V
GS
Gate-Source Voltage (V)
10
32
28
24
TJ=150
℃
V
GS
=
–
4.5
V
20
16
25℃
-50
℃
1
V
GS
=
–
10
V
12
8
4
0.1
1
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
–
I
D
Drain Current
(A)
–
V
SD
Source-Drain Voltage (V)
4
3
10
10
5
4
3
2
V
DS
=
-10
V
I
D
=
-3
A
C
iss
C
oss
C
rss
2
10
10
1
0
1
0
3
6
9
12
15
18
0
3
6
9
12
15
18
Q
g
Gate Charge (nC)
–
V
DS
Drain-Source Voltage (V)
3 /
6
Revision
：
4.0 Oct
-202
2
PJM07P20SA
P
-Channel Enhancement Mode Power MOSFET
R
DS(on)
V
(BR)DSS
2.5
1.3
1.2
2.0
1.5
1.1
1.0
1.0
0.5
0.9
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
Junction Temperature (
℃
)
T
J
Junction Temperature (
℃
)
100
10
10μs
100μs
1ms
1
Limited by R
DS(on)
T
A
=25
℃
Single pulse
DC
0.1
0.1
1
10
–
V
DS
Drain-Source Voltage (V)
3 /
6
Revision
：
4.0 Oct
-202
2
PJM07P20SA
P
-Channel Enhancement Mode Power MOSFET
Package Outline
SOT-23
Dimensions in mm
Ordering Information
Device
Package
SOT-23
Shipping
3,000PCS/Reel&7inches
PJM07P20SA
4
/
6
Revision
：
4.0 Oct
-202
2
PJM07P20SA
P
-Channel Enhancement Mode Power MOSFET
Conditions of Soldering and Storage
Recommended condition of reflow soldering
Recommended peak temperature is over 245
O
C. If peak temperature is below 245
O
C, you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker)
Conditions of hand soldering
T
e
mperature: 370
O
C
Time: 3s
max.
Times: one time
Storage conditions
Temperature
5 to 40
O
C
Humidity
30 to 80% RH
Recommended period
One year after manufacturing
5
/
6
Revision
：
4.0 Oct
-202
2
PJM07P20SA
P
-Channel Enhancement Mode Power MOSFET
Package Specifications
The method of packaging
Cover Tape
3,000 pcs per reel
SOT-23
Carrier Tape
30,000 pcs per box
10 reels per box
120,000 pcs per carton
4 boxes per carton
Embossed tape and reel data
D
A
T2
T1
Symbol
Value (
unit: mm
)
Ø 177.8±1
2.7±0.2
A
B
B
C
Ø 13.5±0.2
Ø 54.5±0.2
C
E
E
12.3±0.3
9.6+2/-0.3
1.0±0.2
F
D
T1
T2
1.2±0.2
F
Reel (7”)
6
/
6
Revision
：
4.0 Oct
-202
2
