Potens-PDB1216E

12V Dual N-Channel MOSFETs  

PDB1216E  

General Description  

BVDSS  

12V  

RDSON  

23m



 

ID  

These dual N Channel enhancement mode power field  

effect transistors are using trench DMOS technology.  

This advanced technology has been especially tailored  

to minimize on-state resistance, provide superior  

switching performance, and withstand high energy  

pulse in the avalanche and commutation mode. These  

devices are well suited for high efficiency fast switching  

applications.  

6A  

Features  



12V,6A, RDS(ON) =23m

Ω

@VGS = 4.5V  



Fast switching  



Green Device Available  



G-S ESD Protection Diode Embedded  

DFN2X2-6L Dual 1EP Pin Configuration  

Applications  

D1/D2  



Notebook  



Load Switch  

S2  

S2  



Networking  

G1  

G2  

G2  

˙

D1/D2  



Hand-held Instruments  

S1  

S1  

G1  

S1  

S2  

Absolute Maximum Ratings

Tc=25

℃

unless otherwise noted  

Symbol Parameter  

Rating  

12  

Units  

V

V

DS  

V

GS  

Drain-Source Voltage  

Gate-Sou

r

ce Voltage  

V

±8  

A

6

Drain Current

–

Continuous (T

C

=25

℃

)  

Drain Current

–

Continuous (T

C

=100

℃

)  

Drain Current

–

Pulsed

1  

I

D  

A

3.8  

I

DM  

P

D  

A

36  

W

1.25  

Power Dissipation (T

C

=25

℃

)  

0.01  

Power Dissipation

–

Derate above 25

℃  

Storage

T

e

mperature Range  

W/

℃  

℃

T

STG  

T

J  

-55 to 150  

-55 to 150  

Operating Junction Temperature Range  

℃

Thermal Characteristics  

Symbol  

Parameter  

Thermal Resistance Junction to Ambient  

Typ.  

—  

Max.  

Unit  

R

θ

JA  

100  

℃

/W  

Potens semiconductor corp.  

Ver.1.05  

1

12V Dual N-Channel MOSFETs  

PDB1216E  

Electrical Characteristics

(T

J

=25

℃

, unless otherwise) noted)  

Off Characteristics  

Symbol  

Parameter  

Conditions  

Min.  

12  

—  

Typ.  

—  

Max.  

—  

Unit  

V

BV

DSS  

Drain-Source Breakdown Voltage  

V

GS

=0V , I

D

=250uA  

V

DS

=12V , V

GS

=0V , T

J

=25

℃

 

V

DS

=10V , V

GS

=0V , T

J

=125

℃  

V

GS

=±8V , V

DS

=0V  

—  

1

uA  

uA  

uA  

I

DSS  

I

GSS  

Drain-Source Leakage Current  

Gate-Source Leakage Current  

—  

—  

10  

—  

—  

±10  

On Characteristics  

V

GS

=4.5V , I

D

=3A  

V

GS

=4.0V , I

D

=3A  

V

GS

=3.8V , I

D

=2A  

V

GS

=3.1V , I

D

=2A  

V

GS

=2.5V , I

D

=2A  

V

GS

=V

DS

, I

D

=250uA  

V

DS

=10V , I

D

=1A  

15  

16  

17  

18  

19  

0.3  

—  

19  

21  

22  

24  

26  

0.6  

3.4  

23  

25  

27  

30  

34  

1

m



 

m

  

m

  

m

  

m

  

V

R

DS(ON)  

Static Drain-Source On-Resistance  

V

GS(th)  

gfs  

Gate Threshold Voltage  

Forward Transconductance  

—  

S

Dynamic and switching Characteristics  

Q

g  

Q

gs  

Q

gd  

T

d(on)  

T

r  

Total Gate Charge

2 , 3  

Gate-Source Charge

2 , 3  

Gate-Drain Charge

2 , 3  

Turn-On Delay Time

2 , 3  

Rise Time

2 , 3  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

7

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

DS

=10V , V

GS

=4.5V , I

D

=3A  

nC  

ns  

0.7  

1.8  

2.9  

8.4  

19.2  

5.6  

370  

60  

V

DD

=10V , V

GS

=4.5V , R

G

=25



 

Turn-Off Delay Time

2 , 3  

Fall Time

2 , 3  

I

D

=1A  

T

d(off)  

T

f  

C

iss  

C

oss  

C

rss  

Input Capacitance  

V

DS

=15V , V

GS

=0V , F=1MHz  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

48  

Drain-Source Diode Characteristics and Maximum Ratings  

Symbol  

Parameter  

Continuous Source Current  

Pulsed Source Current  

Diode Forward Voltage  

Conditions  

Min.  

—  

Typ.  

—  

Max.  

6

Unit  

A

I

S  

V

G

=V

D

=0V , Force Current  

I

SM  

—  

—  

12  

1

A

V

SD  

—  

—  

V

V

GS

=0V , I

S

=1A , T

J

=25

℃  

Note :  

1. Repetitive

 

Rating : Pulsed width limited by maximum junction temperature.  

2. The

 

data tested by pulsed , pulse width

 

≦

300us , duty cycle

 

≦

2%.  

3. Essentially

 

independent of operating temperature.  

Potens semiconductor corp.  

Ver.1.05  

2

12V Dual N-Channel MOSFETs  

PDB1216E  

T

C

, Case Temperature (

℃

)  

T

J

, Junction Temperature (

℃

)  

Fig.2 Normalized

 

RDSON vs. T

J  

Fig.1 Continuous

 

Drain Current vs. T

C  

T

J

, Junction Temperature (

℃

)  

Qg , Gate Charge (

nC

)  

Fig.3 Normalized

 

V

th

vs. T

J  

Fig.4 Gate

 

Charge Waveform  

V

DS

, Drain to Source

V

o

ltage (V)  

Square Wave Pulse Duration (s)  

Fig.5 Normalized

 

Transient Impedance  

Fig.6 Maximum

 

Safe Operation Area  

Potens semiconductor corp.  

Ver.1.05  

3

12V Dual N-Channel MOSFETs  

PDB1216E  

V

DS  

1

2

BV

DSS  

BV

DSS

-V

DD  

EAS=  

BV

DSS  

L x I

AS

2

x  

90%  

V

DD  

I

AS  

10%  

V

GS  

T

d(on)  

T

r  

T

on  

T

d(off)  

T

f  

T

off  

V

GS  

Fig.7 Switching

 

Time Waveform  

Fig.8 EAS

 

Waveform  

Potens semiconductor corp.  

Ver.1.05  

4

12V Dual N-Channel MOSFETs  

PDB1216E  

DFN2X2-6L Dual 1EP PACKAGE INFORMATION  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

MAX  

MIN  

MAX  

MIN  

A

A2  

b

0.600  

0.500  

0.024  

0.019  

0.150REF  

0.006REF  

0.350  

2.050  

1.730  

2.050  

0.950  

0.250  

1.950  

1.630  

1.950  

0.850  

0.014  

0.081  

0.068  

0.081  

0.037  

0.010  

0.076  

0.064  

0.076  

0.033  

D

D1  

E

E1  

e

0.650BSC  

6pin  

0.026BSC  

6pin  

K

—  

0.200  

0.250  

—  

0.008  

0.010  

L

0.350  

0.014  

N

Potens semiconductor corp.  

Ver.1.05  

5