Potens-PDC2604Z

20V N-Channel MOSFETs  

PDC2604Z  

General Description  

BVDSS  

20V  

RDSON  

3.5m



 

ID  

These N-Channel enhancement mode power field effect  

transistors are using trench DMOS technology. This  

advanced technology has been especially tailored to  

minimize on-state resistance, provide superior switching  

performance, and withstand high energy pulse in the  

avalanche and commutation mode. These devices are  

well suited for high efficiency fast switching applications.  

80A  

Features  



20V,80A, RDS(ON) =3.5m

Ω

@VGS = 10V  



Improved dv/dt capability  



Fast switching  



100% EAS Guaranteed  



Green Device Available  

PPAK3x3 Pin Configuration  

Applications  

D



MB / VGA / Vcore  



POL Applications  



SMPS 2

nd

SR  

D

D

D

D

G

G

S

S

S

S

Absolute Maximum Ratings

Tc=25

℃

unless otherwise noted  

Symbol Parameter  

Rating  

Units  

V

V

DS  

V

GS  

Drain-Source Voltage  

20  

±

12  

80  

Gate-Sou

r

ce Voltage  

V

Drain Current – Continuous (Chip Limitation ,T

C

=25

℃

)  

Drain Current – Continuous (Chip Limitation ,T

C

=100

℃

)  

Drain Current – Pulsed

1  

A

I

D  

51  

A

I

DM  

P

D  

320  

A

Power Dissipation (T

C

=25

℃

)  

66  

W

Power Dissipation – Derate above 25

℃  

Storage

T

e

mperature Range  

0.53  

W/

℃  

℃

T

STG  

T

J  

-55 to 175  

-55 to 175  

Operating Junction Temperature Range  

℃

Thermal Characteristics  

Symbol  

Parameter  

Typ.  

Max.  

62  

Unit  

℃

/W  

℃

/W  

R

θJA  

R

θJC  

Thermal Resistance Junction to ambient  

Thermal Resistance Junction to Case  

—  

—  

2

Potens semiconductor corp.  

Ver.1.00  

1

20V N-Channel MOSFETs  

PDC2604Z  

Electrical Characteristics

(T

J

=25

℃

, unless otherwise noted)  

Static State Characteristics  

Symbol  

Parameter  

Conditions  

V

GS

=0V , I

D

=250uA  

Min.  

20  

—  

Typ.  

—  

Max.  

—  

Unit  

V

BV

DSS  

Drain-Source Breakdown Voltage  

V

DS

=20V , V

GS

=0V , T

J

=25

℃  

V

DS

=16V , V

GS

=0V , T

J

=125

℃  

—  

1

uA  

uA  

nA  

m



 

m

  

m

  

V

I

DSS  

I

GSS  

Drain-Source Leakage Current  

Gate-Source Leakage Current  

—  

—  

10  

V

GS

=

±

12V , V

DS

=0V  

—  

—  

±

100  

3.5  

4.5  

7

V

GS

=4.5V , I

D

=15A  

V

GS

=2.5V , I

D

=10A  

V

GS

=1.8V , I

D

=6A  

V

GS

=V

DS

, I

D

=250uA  

V

DS

=5V , I

D

=5A  

—  

2.8  

3.5  

5

R

DS(ON)  

Static Drain-Source On-Resistance

2  

—  

V

GS(th)  

gfs  

Gate Threshold Voltage  

0.3  

—  

0.65  

35  

1

Forward Transconductance  

—  

S

Dynamic Characteristics  

Q

g  

Q

gs  

Q

gd  

T

d(on)  

T

r  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

Turn-On Delay Time  

Rise Time  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

52  

6.6  

100  

12  

V

DS

=10V , V

GS

=4.5V , I

D

=5A  

nC  

ns  

13.8  

20.2  

31.2  

68.5  

21.2  

3870  

580  

340  

1.3  

28  

40  

V

DD

=10V , V

GS

=4.5V , R

G

=3.3

  

60  

I

D

=1A  

T

d(off)  

T

f  

Turn-Off Delay Time  

Fall Time  

120  

42  

C

iss  

C

oss  

C

rss  

R

g  

Input Capacitance  

Output Capacitance  

Reverse Transfer Capacitance  

Gate resistance  

5500  

850  

600  

2.6  

V

DS

=10V , V

GS

=0V , F=1MHz  

V

GS

=0V, V

DS

=0V, F=1MHz  

pF  



Drain-Source Diode Characteristics  

Symbol  

I

S  

Parameter  

Continuous Source Current  

Pulsed Source Current

2  

Diode Forward Voltage

2  

Reverse Recovery Time  

Reverse Recovery Charge  

Conditions  

Min.  

—  

Typ.  

—  

Max.  

80  

Unit  

A

V

G

=V

D

=0V , Force Current  

I

SM  

—  

—  

160  

1

A

V

SD  

t

rr  

V

GS

=0V , I

S

=1A , T

J

=25

℃  

V

GS

=0V,I

S

=1A , di/dt=100A/µs  

T

J

=25

℃  

—  

—  

V

—  

—  

—  

ns  

nC  

Q

rr  

—  

—  

—  

Note :  

1. Repetitive

 

Rating : Pulsed width limited by maximum junction temperature.  

2. The

 

data tested by pulsed , pulse width

 

≦

300us , duty cycle

 

≦

2%.  

3. Essentially

 

independent of operating temperature.  

Potens semiconductor corp.  

Ver.1.00  

2

20V N-Channel MOSFETs  

PDC2604Z  

T

J

, Junction Temperature (

℃

)  

T

C

, Case Temperature (

℃

)  

Fig.1 Continuous

 

Drain Current vs. T

C  

Fig.2 Normalized

 

RDSON vs. T

J  

T

J

, Junction Temperature (

℃

)  

Qg , Gate Charge (

nC

)  

Fig.3 Normalized

 

V

th

vs. T

J  

Fig.4 Gate

 

Charge Waveform  

V

DS

, Drain to Source

V

o

ltage (V)  

Square Wave Pulse Duration (s)  

Fig.5 Normalized

 

Transient Impedance  

Fig.6 Maximum

 

Safe Operation Area  

Potens semiconductor corp.  

Ver.1.00  

3

20V N-Channel MOSFETs  

PDC2604Z  

Fig.7 Switching

 

Time Waveform  

Fig.8 EAS

 

Waveform  

Potens semiconductor corp.  

Ver.1.00  

4

20V N-Channel MOSFETs  

PDC2604Z  

PPAK3x3 PACKAGE INFORMATION  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min  

Max  

0.800  

0.350  

0.250  

3.450  

3.200  

1.980  

Min  

0.028  

0.010  

0.004  

0.128  

0.119  

0.070  

Max  

0.031  

0.013  

0.009  

0.135  

0.125  

0.077  

A

b

0.700  

0.250  

0.100  

3.250  

3.000  

1.780  

c

D

D1  

D2  

D3  

E

0.130 REF  

0.005 REF  

0.026 BSC  

3.200  

3.000  

2.390  

3.400  

3.200  

2.590  

0.126  

0.119  

0.094  

0.133  

0.125  

0.102  

E1  

E2  

e

0.650 BSC  

H

0.300  

0.300  

0.500  

0.500  

0.011  

0.011  

0.019  

0.019  

L

L1  

θ

M

0.130 REF  

0.005 REF  

0.006 REF  

0

˚  

12

˚  

0

˚  

12

˚  

0.150 REF  

Potens semiconductor corp.  

Ver.1.00  

5