Potens-PDC3904Z
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30V N-Channel MOSFETs
PDC3904Z
General Description
BVDSS
30V
RDSON
3.8m
Ω
ID
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
80A
Features
30V,80A, RDS(ON) =3.8m
Ω
@VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
PPAK3x3 Pin Configuration
Applications
D
MB / VGA / Vcore
POL Applications
SMPS 2
nd
SR
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings
Tc=25 unless
otherwise noted
Symbol Parameter
Rating
30
20
Units
V
V
DS
V
GS
Drain-Source Voltage
Gate-Sou ce Voltage
V
80
51
A
Drain Current – Continuous (T
C
=25
Drain Current – Continuous (T
C
=100
Drain Current – Pulsed
1
)
I
D
A
)
I
DM
320
A
EAS
IAS
Single Pulse Avalanche Energy
2
Single Pulse Avalanche Current
2
125
mJ
A
50
66
W
W/
Power Dissipation (T
C
=25
)
P
D
0.53
Power Dissipation – Derate above 25
Storage
T
e
mperature Range
T
STG
T
J
-55 to 175
-55 to 175
Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
62
Unit
/W
R
θ
JA
R
θ
JC
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
—
—
2
/W
Potens semiconductor corp.
Ver.1.00
1
30V N-Channel MOSFETs
PDC3904Z
Electrical Characteristics
(T
J
=25 ,
unless otherwise noted)
Static State Characteristics
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
BV
DSS
T
J
0.03
—
—
Reference to 25
, I
D
=1mA
V
DS
=30V , V
GS
=0V , T
J
=25
V
DS
=24V , V
GS
=0V , T
J
=125
V
GS
20V , V
DS
=0V
V/
—
1
uA
uA
nA
m
Ω
m
Ω
V
I
DSS
Drain-Source Leakage Current
—
—
10
I
GSS
Gate-Source Leakage Current
—
—
100
3.8
5.5
2.5
—
V
GS
=10V , I
D
=24A
—
2.9
4.3
1.6
-5
R
DS(ON)
Static Drain-Source On-Resistance
3
V
GS
=4.5V , I
D
=12A
—
V
GS(th)
V
GS(th)
gfs
Gate Threshold Voltage
1.2
—
V
GS
=V
DS
, I
D
=250uA
V
DS
=10V , I
D
=10A
V
GS(th)
Temperature Coefficient
Forward Transconductance
mV/
S
—
28
—
Dynamic Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
Total Gate Charge
3 , 4
Gate-Source Charge
3 , 4
Gate-Drain Charge
3 , 4
Turn-On Delay Time
3 , 4
Rise Time
3 , 4
—
—
—
—
—
—
—
—
—
—
—
24
4.2
34
6
V
DS
=15V , V
GS
=4.5V , I
D
=24A
nC
ns
13
18
12.6
19.5
42.8
13.2
2200
280
177
2
24
V
DD
=15V , V
GS
=10V , R
G
=3.3
Ω
37
Turn-Off Delay Time
3 , 4
Fall Time
3 , 4
81
I
D
=15A
T
d(off)
T
f
25
C
iss
C
oss
C
rss
R
g
Input Capacitance
3190
405
255
4
V
DS
=25V , V
GS
=0V , F=1MHz
V
GS
=0V, V
DS
=0V, F=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Ω
Guaranteed Avalanche Energy
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
V
DD
=25V, L=0.1mH, IAS=24A
31
—
—
mJ
Drain-Source Diode Characteristics
Symbol
I
S
Parameter
Continuous Source Current
Pulsed Source Current
3
Diode Forward Voltage
3
Reverse Recovery Time
Reverse Recovery Charge
Conditions
Min.
—
Typ.
—
Max.
80
Unit
A
V
G
=V
D
=0V , Force Current
I
SM
—
—
320
1
A
V
SD
t
rr
—
—
V
V
GS
=0V , I
S
=1A , T
J
=25
V
GS
=0V,I
S
=1A , di/dt=100A/µs
—
—
—
ns
nC
Q
rr
—
—
—
T
J
=25
Note :
1. Repetitive
Rating : Pulsed width limited by maximum junction temperature.
2. V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=50A.,R =25
Ω
Starting T
J
=25
G
3. The
data tested by pulsed , pulse width
300us , duty cycle
2%.
4. Essentially
independent of operating temperature.
Potens semiconductor corp.
Ver.1.00
2
30V N-Channel MOSFETs
PDC3904Z
T
C
, Case Temperature (
)
T
J
, Junction Temperature (
)
Fig.2 Normalized
RDSON vs. T
J
Fig.1 Continuous
Drain Current vs. T
C
T
J
, Junction Temperature (
)
Qg , Gate Charge (
)
Fig.3 Normalized
V
th
vs. T
J
Fig.4 Gate
Charge Waveform
V
DS
, Drain to Source
V
o
ltage (V)
Square Wave Pulse Duration (s)
Fig.5 Normalized
Transient Impedance
Fig.6 Maximum
Safe Operation Area
Potens semiconductor corp.
Ver.1.00
3
30V N-Channel MOSFETs
PDC3904Z
Fig.7 Switching
Time Waveform
Fig.8 EAS
Waveform
Potens semiconductor corp.
Ver.1.00
4
30V N-Channel MOSFETs
PDC3904Z
PPAK3x3 PACKAGE INFORMATION
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
0.700
0.250
0.100
3.250
3.000
1.780
Max
0.800
0.350
0.250
3.450
3.200
1.980
Min
0.028
0.010
0.004
0.128
0.119
0.070
Max
0.031
0.013
0.009
0.135
0.125
0.077
A
b
c
D
D1
D2
D3
E
0.130 REF
0.005 REF
0.026 BSC
3.200
3.000
2.390
3.400
3.200
2.590
0.126
0.119
0.094
0.133
0.125
0.102
E1
E2
e
0.650 BSC
H
0.300
0.300
0.500
0.500
0.011
0.011
0.019
0.019
L
L1
θ
M
0.130 REF
0.005 REF
0.006 REF
0
°
12
°
0
°
12
°
0.150 REF
Potens semiconductor corp.
Ver.1.00
5
