Potens-PDC3964X
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30V N-Channel MOSFETs
PDC3964X
General Description
BVDSS
30V
RDSON
4.5m
ID
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
82A
Features
⚫
30V,82A, RDS(ON) =4.5m
Ω@VGS = 10V
⚫
Improved dv/dt capability
⚫
Fast switching
⚫
100% EAS Guaranteed
⚫
Green Device Available
PPAK5X6 Pin Configuration
Applications
D
D
⚫
Networking
D
D
⚫
Load Switch
⚫
LED applications
D
G
G
S
S
S
S
Absolute Maximum Ratings
Tc=25
℃
unless otherwise noted
Symbol
Parameter
Rating
Units
V
V
DS
V
GS
Drain-Source Voltage
30
±
20
82
V
Gate-Sou
r
ce Voltage
Drain Current
–
Continuous (T
C
=25
℃
)
Drain Current
–
Continuous (T
C
=100
℃
)
Drain Current
–
Pulsed
1
A
I
D
52
A
I
DM
328
A
EAS
IAS
Single Pulse Avalanche Energy
2
Single Pulse Avalanche Current
2
Power Dissipation (T
C
=25
℃
)
115
mJ
A
48
73.5
W
P
D
Power Dissipation
–
Derate above 25
℃
Storage
T
e
mperature Range
0.59
W/
℃
℃
℃
T
STG
T
J
-50 to 150
-50 to 150
Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
62
Unit
℃
/W
℃
/W
R
θ
JA
R
θ
JC
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
—
—
1.7
Potens semiconductor corp.
Ver.1.01
1
30V N-Channel MOSFETs
PDC3964X
Electrical Characteristics
(T
J
=25
℃
, unless otherwise noted)
Off Characteristics
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
J
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
Reference to 25
℃
, I
D
=1mA
V
DS
=30V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=125
℃
0.03
—
—
V/
℃
uA
—
1
I
DSS
I
GSS
Drain-Source Leakage Current
Gate-Source Leakage Current
—
—
10
uA
V
GS
=
±
20V , V
DS
=0V
—
—
±
100
nA
On Characteristics
V
GS
=10V , I
D
=15A
V
GS
=4.5V , I
D
=10A
—
—
3.6
4.9
4.5
6.4
2.5
—
m
m
V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS(th)
△
V
GS(th)
gfs
Gate Threshold Voltage
1.0
—
1.6
V
GS
=V
DS
, I
D
=250uA
V
DS
=10V , I
D
=3A
V
GS(th)
Temperature Coefficient
Forward Transconductance
-4.17
10
mV/
℃
S
—
—
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
Total Gate Charge
3 , 4
Gate-Source Charge
3 , 4
Gate-Drain Charge
3 , 4
Turn-On Delay Time
3 , 4
Rise Time
3 , 4
—
—
—
—
—
—
—
—
—
—
—
34.6
5.5
70
11
V
DS
=15V , V
GS
=10V , I
D
=15A
nC
ns
6.8
13
9.7
20
V
DD
=15V , V
GS
=10V , R
G
=3.3
15.8
37.4
12
31
Turn-Off Delay Time
3 , 4
Fall Time
3 , 4
75
I
D
=1A
T
d(off)
T
f
24
C
iss
C
oss
C
rss
R
g
Input Capacitance
1910
300
230
1.14
3800
600
460
—
V
DS
=15V , V
GS
=0V , F=1MHz
V
GS
=0V, V
DS
=0V, F=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
Min.
—
Typ.
—
Max.
82
Unit
A
V
G
=V
D
=0V , Force Current
I
SM
—
—
164
1
A
V
SD
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
—
V
Note :
1. Repetitive
Rating : Pulsed width limited by maximum junction temperature.
2. V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=48A.,R
G
=25
,
Starting T
J
=25
℃
.
3. The
data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
4. Essentially
independent of operating temperature.
Potens semiconductor corp.
Ver.1.01
2
30V N-Channel MOSFETs
PDC3964X
T
C
, Case Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.1 Continuous
Drain Current vs. TC
Fig.2 Normalized
RDSON vs. TJ
Qg , Gate Charge (nC)
T
J
, Junction Temperature (
℃
)
Fig.3 Normalized
V
th
vs. T
J
Fig.4 Gate
Charge Characteristics
V
DS
,Drain to Source
V
o
ltage (
V
)
I
D
, Drain Current (A)
Fig.6 Turn-On
Resistance vs. I
D
Fig.5 Typical
Output Characteristics
Potens semiconductor corp.
Ver.1.01
3
30V N-Channel MOSFETs
PDC3964X
V
DS
, Drain to Source
V
o
ltage (
V
)
Fig.7 Capacitance
Characteristics
V
DS
, Drain to Source
V
o
ltage (V)
Fig.9 Maximum
Safe Operation Area
Square Wave Pulse Duration (s)
Fig.8 Normalized
Transient Impedance
V
DS
90%
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.10 Switching
Time Waveform
Fig.11 Gate
Charge Waveform
Potens semiconductor corp.
Ver.1.01
4
30V N-Channel MOSFETs
PDC3964X
PPAK5X6 PACKAGE INFORMATION
Dimensions In Millimeters
Dimensions In Inches
Symbol
MAX
1.100
0.510
0.300
5.100
4.100
6.200
5.900
3.780
MIN
0.800
0.330
0.200
4.800
3.610
5.900
5.700
3.350
MAX
0.043
0.020
0.012
0.201
0.161
0.244
0.232
0.149
MIN
0.031
0.013
0.008
0.189
0.142
0.232
0.224
0.132
A
b
C
D1
D2
E
E1
E2
e
1.27BSC
0.05BSC
H
0.700
1.500
0.710
0.200
12°
0.410
1.100
0.510
0.060
0°
0.028
0.059
0.028
0.008
12°
0.016
0.043
0.020
0.002
0°
K
L
L1
θ
Potens semiconductor corp.
Ver.1.01
5
