Potens-PDC906Z
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30V N-Channel MOSFETs
PDC906Z
General Description
BVDSS
30V
RDSON
6m
ID
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
60A
Features
⚫
30V,60A, RDS(ON) =6m
Ω@VGS =
10V
⚫
Improved dv/dt capability
⚫
Fast switching
⚫
100% EAS Guaranteed
⚫
Green Device Available
PPAK3x3 Pin Configuration
Applications
D
⚫
MB / VGA / Vcore
⚫
POL Applications
⚫
SMPS 2
nd
SR
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings
Tc=25
℃
unless otherwise noted
Symbol Parameter
Rating
Units
V
V
DS
V
GS
Drain-Source Voltage
30
±
20
60
V
Gate-Sou
r
ce Voltage
Drain Current
–
Continuous (T
C
=25
℃
)
Drain Current
–
Continuous (T
C
=100
℃
)
Drain Current
–
Pulsed
1
A
I
D
38
A
I
DM
240
A
EAS
IAS
Single Pulse Avalanche Energy
2
Single Pulse Avalanche Current
2
Power Dissipation (T
C
=25
℃
)
88
mJ
A
42
45
W
P
D
Power Dissipation
–
Derate above 25
℃
Storage
T
e
mperature Range
0.36
-55 to 150
-55 to 150
W/
℃
℃
℃
T
STG
T
J
Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
62
Unit
℃
/W
℃
/W
R
θ
JA
R
θ
JC
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
—
—
2.8
Potens semiconductor corp.
Ver.1.00
1
30V N-Channel MOSFETs
PDC906Z
Electrical Characteristics
(T
J
=25
℃
, unless otherwise noted)
Static State Characteristics
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
J
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
Reference to 25
℃
, I
D
=1mA
V
DS
=30V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=125
℃
0.04
—
—
V/
℃
uA
—
1
I
DSS
Drain-Source Leakage Current
—
—
10
±
100
6
uA
V
GS
=
±
20V , V
DS
=0V
I
GSS
Gate-Source Leakage Current
—
—
nA
V
GS
=10V , I
D
=20A
V
GS
=4.5V , I
D
=10A
—
4.8
6.7
1.6
-4
m
m
V
R
DS(ON)
Static Drain-Source On-Resistance
3
—
9
V
GS(th)
△
V
GS(th)
gfs
Gate Threshold Voltage
1.2
—
2.5
—
V
GS
=V
DS
, I
D
=250uA
V
DS
=10V , I
D
=10A
V
GS(th)
Temperature Coefficient
Forward Transconductance
mV/
℃
S
—
23
—
Dynamic Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
Total Gate Charge
3 , 4
Gate-Source Charge
3 , 4
Gate-Drain Charge
3 , 4
Turn-On Delay Time
3 , 4
Rise Time
3 , 4
—
—
—
—
—
—
—
—
—
—
—
11.1
1.85
6.8
18
3.8
12
V
DS
=15V , V
GS
=4.5V , I
D
=20A
nC
ns
7.5
14
V
DD
=15V , V
GS
=10V , R
G
=3.3
14.5
35.2
9.6
28
Turn-Off Delay Time
3 , 4
Fall Time
3 , 4
67
I
D
=15A
T
d(off)
T
f
18
C
iss
C
oss
C
rss
R
g
Input Capacitance
1210
190
100
2.5
1800
280
150
5
V
DS
=25V , V
GS
=0V , F=1MHz
V
GS
=0V, V
DS
=0V, F=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Guaranteed Avalanche Energy
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
V
DD
=25V, L=0.1mH, IAS=20A
20
—
—
mJ
Drain-Source Diode Characteristics
Symbol
I
S
Parameter
Continuous Source Current
Pulsed Source Current
3
Diode Forward Voltage
3
Reverse Recovery Time
Reverse Recovery Charge
Conditions
Min.
—
Typ.
—
Max.
60
Unit
A
V
G
=V
D
=0V , Force Current
I
SM
—
—
240
1
A
V
SD
t
rr
V
GS
=0V , I
S
=1A , T
J
=25
℃
V
GS
=0V,I
S
=1A , di/dt=100A/µs
T
J
=25
℃
—
—
V
—
—
—
ns
nC
Q
rr
—
—
—
Note :
1. Repetitive
Rating : Pulsed width limited by maximum junction temperature.
2. V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=42A.,R
G
=25
,
Starting T
J
=25
℃
.
3. The
data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
4. Essentially
independent of operating temperature.
Potens semiconductor corp.
Ver.1.00
2
30V N-Channel MOSFETs
PDC906Z
T
C
, Case Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.1 Continuous
Drain Current vs. T
C
Fig.2 Normalized
RDSON vs. T
J
T
J
, Junction Temperature (
℃
)
Qg , Gate Charge (
nC
)
Fig.3 Normalized
V
th
vs. T
J
Fig.4 Gate
Charge Waveform
V
DS
, Drain to Source
V
o
ltage (V)
Square Wave Pulse Duration (s)
Fig.5 Normalized
Transient Impedance
Fig.6 Maximum
Safe Operation Area
Potens semiconductor corp.
Ver.1.00
3
30V N-Channel MOSFETs
PDC906Z
V
DS
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.7 Switching
Time Waveform
Fig.8 EAS
Waveform
Potens semiconductor corp.
Ver.1.00
4
30V N-Channel MOSFETs
PDC906Z
PPAK3x3 PACKAGE INFORMATION
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
0.800
0.350
0.250
3.450
3.200
1.980
Min
Max
0.031
0.013
0.009
0.135
0.125
0.077
A
b
0.700
0.250
0.100
3.250
3.000
1.780
0.028
0.010
0.004
0.128
0.119
0.070
c
D
D1
D2
D3
E
0.130 REF
0.005 REF
0.026 BSC
3.200
3.000
2.390
3.400
3.200
2.590
0.126
0.119
0.094
0.133
0.125
0.102
E1
E2
e
0.650 BSC
H
0.300
0.300
0.500
0.500
0.011
0.011
0.019
0.019
L
L1
θ
M
0.130 REF
0.005 REF
0.006 REF
0
°
12
°
0
°
12
°
0.150 REF
Potens semiconductor corp.
Ver.1.00
5
30V N-Channel MOSFETs
PDC906Z
TOP MARKING INFORMATION
DC906Z
XXXXXX
Product Name:
●
Pin 1 mark
Date Code
Potens semiconductor corp.
Ver.1.00
6
