Potens-PDD6902

60V N-Channel MOSFETs  

PDD6902  

General Description  

BVDSS  

60V  

RDSON  

4.5m



 

ID  

These N-Channel enhancement mode power field effect  

transistors are using trench DMOS technology. This  

advanced technology has been especially tailored to  

minimize on-state resistance, provide superior switching  

performance, and withstand high energy pulse in the  

avalanche and commutation mode. These devices are  

well suited for high efficiency fast switching applications.  

90A  

Features  



60V,90A, RDS(ON) =4.5m

Ω@VGS = 10V  



Improved dv/dt capability  



Fast switching  



Green Device Available  

TO252 Pin Configuration  

D

Applications  

D



PowerTools  



Quick Charger  



LED applications  



Motor Drive Applications  

G

S

G

S

Absolute Maximum Ratings

Tc=25

℃

unless otherwise noted  

Symbol  

Parameter  

Rating  

60  

Units  

V

V

DS  

V

GS  

Drain-Source Voltage  

Gate-Sou

r

ce Voltage  

V

±

20  

90  

A

Drain Current

–

Continuous (T

C

=25

℃

)  

Drain Current

–

Continuous (T

C

=100

℃

)  

Drain Current

–

Pulsed

1  

I

D  

60  

A

I

DM  

360  

A

EAS  

IAS  

Single Pulse Avalanche Energy

2  

Single Pulse Avalanche Current

2  

Power Dissipation (T

C

=25

℃

)  

450  

mJ  

A

95  

132  

W

P

D  

1.06  

Power Dissipation

–

Derate above 25

℃  

Storage

T

e

mperature Range  

W/

℃  

℃

℃

T

STG  

T

J  

-50 to 150  

-50 to 150  

Operating Junction Temperature Range  

Thermal Characteristics  

Symbol  

Parameter  

Typ.  

—  

Max.  

Unit  

℃

/W  

℃

/W  

R

θ

JA  

R

θ

JC  

Thermal Resistance Junction to ambient  

Thermal Resistance Junction to Case  

62  

—  

0.94  

Potens semiconductor corp.  

Ver.1.00  

1

60V N-Channel MOSFETs  

PDD6902  

Electrical Characteristics

(T

J

=25

℃

, unless otherwise noted)  

Off Characteristics  

Symbol  

Parameter  

Conditions  

V

GS

=0V , I

D

=250uA  

Min.  

60  

—  

Typ.  

—  

Max.  

—  

Unit  

V

BV

DSS  

Drain-Source Breakdown Voltage  

—  

1

uA  

uA  

nA  

V

DS

=60V , V

GS

=0V , T

J

=25

℃  

V

DS

=48V , V

GS

=0V , T

J

=125

℃  

I

DSS  

I

GSS  

Drain-Source Leakage Current  

Gate-Source Leakage Current  

—  

—  

10  

—  

—  

V

GS

=

±

20V , V

DS

=0V  

±

100  

On Characteristics  

V

GS

=10V , I

D

=20A  

V

GS

=4.5V , I

D

=10A  

V

GS

=V

DS

, I

D

=250uA  

V

DS

=10V , I

D

=3A  

—  

‘

—  

1

3.8  

4.2  

1.6  

25  

4.5  

5.5  

2.5  

—  

m



 

m

  

V

R

DS(ON)  

Static Drain-Source On-Resistance  

V

GS(th)  

gfs  

Gate Threshold Voltage  

Forward Transconductance  

—  

S

Dynamic and switching Characteristics  

Q

g  

Q

gs  

Q

gd  

T

d(on)  

T

r  

Total Gate Charge

3,4  

Gate-Source Charge

3,4  

Gate-Drain Charge

3,4  

Turn-On Delay Time

3,4  

Rise Time

3,4  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

58.2  

16.2  

23.4  

19.2  

56.3  

90.8  

21.6  

116  

32  

V

DS

=30V , V

GS

=4.5V , I

D

=10A  

nC  

ns  

46  

40  

V

DD

=30V , V

GS

=10V , R

G

=6

  

120  

200  

40  

Turn-Off Delay Time

3,4  

Fall Time

3,4  

I

D

=1A  

T

d(off)  

T

f  

C

iss  

C

oss  

C

rss  

R

g  

Input Capacitance  

Output Capacitance  

Reverse Transfer Capacitance  

Gate resistance  

6805 10000  

V

DS

=25V , V

GS

=0V , F=1MHz  

V

GS

=0V, V

DS

=0V, F=1MHz  

pF  

445  

195  

1.3  

680  

280  

2.6  



Drain-Source Diode Characteristics and Maximum Ratings  

Symbol  

I

S  

Parameter  

Continuous Source Current  

Pulsed Source Current  

Diode Forward Voltage  

Conditions  

Min.  

—  

Typ.  

—  

Max.  

90  

Unit  

A

V

G

=V

D

=0V , Force Current  

I

SM  

—  

—  

180  

1

A

V

SD  

—  

—  

V

V

GS

=0V , I

S

=1A , T

J

=25

℃  

Note :  

1. Repetitive

 

Rating : Pulsed width limited by maximum junction temperature.  

2. V

DD

=25V,V

GS

=10V,L=0.1mH,I

AS

=95A., Starting T

J

=25

℃

 

3. The

 

data tested by pulsed , pulse width

 

≦

300us , duty cycle

 

≦

2%.  

4. Essentially

 

independent of operating temperature.  

Potens semiconductor corp.  

Ver.1.00  

2

60V N-Channel MOSFETs  

PDD6902  

T

J

, Junction Temperature (

℃

)  

T

C

, Case Temperature (

℃

)  

Fig.1 Continuous

 

Drain Current vs. T

C  

Fig.2 Normalized

 

RDSON vs. T

J  

Qg , Gate Charge (nC)  

T

J

, Junction Temperature (

℃

)  

Fig.3 Normalized

 

Vth vs. T

J  

Fig.4 Gate

 

Charge Characteristics  

V

DS

, Drain to Source

V

o

ltage (V)  

Square Wave Pulse Duration (s)  

Fig.6 Maximum

 

Safe Operation Area  

Fig.5 Normalized

 

Transient Impedance  

Potens semiconductor corp.  

Ver.1.00  

3

60V N-Channel MOSFETs  

PDD6902  

V

DS  

90%  

10%  

V

GS  

T

d(on)  

T

r  

T

on  

T

d(off)  

T

f  

T

off  

Fig.7 Switching

 

Time Waveform  

Fig.8 Gate

 

Charge Waveform  

Potens semiconductor corp.  

Ver.1.00  

4

60V N-Channel MOSFETs  

PDD6902  

TO252 PACKAGE INFORMATION  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

MAX  

2.400  

1.110  

0.150  

6.800  

0.580  

0.580  

5.500  

2.386  

0.940  

0.860  

10.400  

3.000  

6.200  

1.200  

9°  

MIN  

2.200  

0.910  

0.000  

6.400  

0.450  

0.460  

5.100  

2.186  

0.600  

0.500  

9.400  

2.400  

5.400  

0.600  

3°  

MAX  

0.094  

0.044  

0.006  

0.268  

0.023  

0.023  

0.217  

0.094  

0.037  

0.034  

0.409  

0.118  

0.244  

0.047  

9°  

MIN  

0.087  

0.036  

0.000  

0.252  

0.018  

0.018  

0.201  

0.086  

0.024  

0.020  

0.370  

0.094  

0.213  

0.024  

3°  

A

A1  

A2  

B

C

C1  

D

E

F

F1  

L

L1  

L2  

L3  

θ

Potens semiconductor corp.  

Ver.1.00  

5