Potens-PDN3612S

30V N-Channel MOSFETs  

PDN3612S  

General Description  

BVDSS  

30V  

RDSON  

32m

Ω

 

ID  

These N-Channel enhancement mode power field effect  

transistors are using trench DMOS technology. This  

advanced technology has been especially tailored to  

minimize on-state resistance, provide superior switching  

performance, and withstand high energy pulse in the  

avalanche and commutation mode. These devices are  

well suited for high efficiency fast switching applications.  

5.3A  

Features  



30V, 5.3 A, RDS(ON) =32m

Ω@VGS =

4.5V  



Improved dv/dt capability  



Fast switching  



Green Device Available  

SOT23-3S Pin Configuration  



Suit for 2.5V Gate Drive Applications  

D

Applications  

D



Notebook  



Load Switch  



LED applications  

S

G

G

S

Absolute Maximum Ratings

Tc=25

℃

unless otherwise noted  

Symbol  

Parameter  

Rating  

Units  

V

V

DS  

V

GS  

Drain-Source Voltage  

30  

±

12  

V

Gate-Sou

r

ce Voltage  

5.3  

A

Drain Current – Continuous (T

C

=25

℃

)  

Drain Current – Continuous (T

C

=100

℃

)  

Drain Current – Pulsed

1  

I

D  

3.4  

A

I

DM  

P

D  

21.2  

A

1.56  

W

Power Dissipation (T

C

=25

℃

)  

0.012  

-55 to 150  

-55 to 150  

Power Dissipation – Derate above 25

℃  

Storage

T

emperature Range  

W/

℃  

℃

℃

T

STG  

T

J  

Operating Junction Temperature Range  

Thermal Characteristics  

Symbol  

Parameter  

Thermal Resistance Junction to ambient  

Typ.  

—  

Max.  

Unit  

R

θ

JA  

80  

℃

/W  

Potens semiconductor corp.  

Ver.1.00  

1

30V N-Channel MOSFETs  

PDN3612S  

Electrical Characteristics

(T

J

=25

℃

, unless otherwise noted)  

Off Characteristics  

Symbol  

Parameter  

Conditions  

V

GS

=0V , I

D

=250uA  

Min.  

30  

—  

Typ.  

—  

Max.  

—  

Unit  

V

BV

DSS  

Drain-Source Breakdown Voltage  

BV

DSS

Temperature Coefficient  

△

BV

DSS

/

△

T

J  

0.06  

—  

—  

Reference to 25

℃

, I

D

=1mA  

V

DS

=30V , V

GS

=0V , T

J

=25

℃  

V

DS

=24V , V

GS

=0V , T

J

=125

℃  

V/

℃  

uA  

—  

1

I

DSS  

I

GSS  

Drain-Source Leakage Current  

Gate-Source Leakage Current  

—  

—  

10  

uA  

V

GS

=

±

12V , V

DS

=0V  

—  

—  

nA  

±

100  

On Characteristics  

V

GS

=4.5V , I

D

=4A  

V

GS

=2.5V , I

D

=3A  

—  

—  

27  

32  

0.6  

-3  

32  

40  

0.9  

—  

R

DS(ON)  

Static Drain-Source On-Resistance  

m

Ω

 

V

GS(th)  

△

V

GS(th)  

gfs  

Gate Threshold Voltage  

0.4  

—  

V

mV/

℃  

S

V

GS

=V

DS

, I

D

=250uA  

V

DS

=10V , I

S

=3A  

V

GS(th)

Temperature Coefficient  

Forward Transconductance  

—  

7

—  

Dynamic and switching Characteristics  

Q

g  

Q

gs  

Q

gd  

T

d(on)  

T

r  

Total Gate Charge

2 , 3  

Gate-Source Charge

2 , 3  

Gate-Drain Charge

2 , 3  

Turn-On Delay Time

2 , 3  

Rise Time

2 , 3  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

8.4  

1

12  

2

V

DS

=10V , V

GS

=4.5V , I

D

=4A  

nC  

nS  

2.2  

4.5  

13  

4

9

V

DD

=10V , V

GS

=4.5V , R

G

=25

Ω  

25  

51  

16  

1000  

65  

50  

3

Turn-Off Delay Time

2 , 3  

Fall Time

2 , 3  

27  

I

D

=1A  

T

d(off)  

T

f  

8.3  

695  

45  

C

iss  

C

oss  

C

rss  

R

g  

Input Capacitance  

V

DS

=10V , V

GS

=0V , F=1MHz  

V

GS

=0V, V

DS

=0V, F=1MHz  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

Gate resistance  

36  

1.5  

Ω

Drain-Source Diode Characteristics and Maximum Ratings  

Symbol  

I

S  

Parameter  

Continuous Source Current  

Pulsed Source Current  

Diode Forward Voltage  

Conditions  

Min.  

—  

Typ.  

—  

Max.  

5.3  

21.2  

1

Unit  

A

V

G

=V

D

=0V , Force Current  

I

SM  

—  

—  

A

V

SD  

—  

—  

V

V

GS

=0V , I

S

=1A , T

J

=25

℃  

Note :  

1. Repetitive

 

Rating : Pulsed width limited by maximum junction temperature.  

2. The

 

data tested by pulsed , pulse width

 

≦

300us , duty cycle

 

≦

2%.  

3. Essentially

 

independent of operating temperature.  

Potens semiconductor corp.  

Ver.1.00  

2

30V N-Channel MOSFETs  

PDN3612S  

T

J

, Junction Temperature (

℃

)  

T

C

, Case Temperature (

℃

)  

Fig.2 Normalized

 

RDSON vs. T

J  

Fig.1 Continuous

 

Drain Current vs. T

C  

T

J

, Junction Temperature (

℃

)  

Qg , Gate Charge (

nC

)  

Fig.3 Normalized

 

V

th

vs. T

J  

Fig.4 Gate

 

Charge Waveform  

V

DS

, Drain to Source

V

o

ltage (V)  

Square

W

a

ve Pulse Duration (s)  

Fig.5 Normalized

 

Transient Impedance  

Fig.6 Maximum

 

Safe Operation Area  

Potens semiconductor corp.  

Ver.1.00  

3

30V N-Channel MOSFETs  

PDN3612S  

V

DS  

90%  

10%  

V

GS  

T

d(on)  

T

r  

T

on  

T

d(off)  

T

f  

T

off  

Fig.7 Switching

 

Time Waveform  

Fig.8 Gate

 

Charge Waveform  

Potens semiconductor corp.  

Ver.1.00  

4

30V N-Channel MOSFETs  

PDN3612S  

SOT23-3S PACKAGE INFORMATION  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min  

0.900  

0.000  

0.300  

0.090  

2.800  

1.200  

2.250  

Max  

1.000  

0.100  

0.500  

0.110  

3.000  

1.400  

2.550  

Min  

0.035  

0.000  

0.012  

0.003  

0.110  

0.047  

0.089  

Max  

0.039  

0.004  

0.020  

0.004  

0.118  

0.055  

0.100  

A

A1  

b

c

D

E

E1  

e

0.950 TY

P

.  

0.037 TY

P

.  

0.022 RE

F

.  

e1  

L

1.800  

2.000  

0.071  

0.079  

0.550 RE

F

.  

L1  

θ

0.300  

0.500  

0.012  

0.020  

1

°  

7

°  

1

°  

7

°  

Potens semiconductor corp.  

Ver.1.00  

5