Potens-PDN3916S

30V N-Channel MOSFETs  

PDN3916S  

General Description  

BVDSS  

30V  

RDSON  

35m



 

ID  

These N-Channel enhancement mode power field effect  

transistors are using trench DMOS technology. This  

advanced technology has been especially tailored to  

minimize on-state resistance, provide superior switching  

performance, and withstand high energy pulse in the  

avalanche and commutation mode. These devices are  

well suited for high efficiency fast switching applications.  

5.1A  

Features  



30V,5.1A , RDS(ON)=35m

Ω@VGS=

10V  



Improved dv/dt capability  



Fast switching  



Green Device Available  

SOT23-3S Pin Configuration  

Applications  

D



MB / VGA / Vcore  



Load Switch  



Hand-Held Instrument  

D

G

S

S

G

Absolute Maximum Ratings

Tc=25

℃

unless otherwise noted  

Symbol  

Parameter  

Rating  

30  

Units  

V

V

DS  

V

GS  

Drain-Source Voltage  

Gate-Sou

r

ce Voltage  

V

±

20  

5.1  

A

Drain Current

–

Continuous (T

A

=25

℃

)  

Drain Current

–

Continuous (T

A

=70

℃

)  

Drain Current

–

Pulsed

1  

I

D  

4.1  

A

I

DM  

P

D  

20.4  

A

1.56  

W

Power Dissipation (T

A

=25

℃

)  

0.012  

-55 to 150  

-55 to 150  

Power Dissipation

–

Derate above 25

℃  

Storage

T

e

mperature Range  

W/

℃  

℃

T

STG  

T

J  

Operating Junction Temperature Range  

℃

Thermal Characteristics  

Symbol  

Parameter  

Thermal Resistance Junction to ambient  

Typ.  

Max.  

Unit  

R

θ

JA  

—  

80  

℃

/W  

Potens semiconductor corp.  

Ver.1.02  

1

30V N-Channel MOSFETs  

PDN3916S  

Electrical Characteristics

(T

J

=25

℃

, unless otherwise noted)  

Off Characteristics  

Symbol  

Parameter  

Conditions  

V

GS

=0V , I

D

=250uA  

Min.  

30  

—  

Typ.  

—  

Max.  

—  

Unit  

V

BV

DSS  

Drain-Source Breakdown Voltage  

J

BV

DSS

Temperature Coefficient  

△

BV

DSS

/

△

T  

0.018  

—  

—  

Reference to 25

℃

, I

D

=1mA  

V

DS

=30V , V

GS

=0V , T

J

=25

℃  

V

DS

=24V , V

GS

=0V , T

J

=125

℃  

V/

℃  

uA  

—  

1

I

DSS  

I

GSS  

Drain-Source Leakage Current  

Gate-Source Leakage Current  

—  

—  

10  

uA  

—  

—  

nA  

V

GS

=

±

20V , V

DS

=0V  

±

100  

On Characteristics  

V

GS

=10V , I

D

=2A  

V

GS

=4.5V , I

D

=1A  

—  

—  

1

29  

44  

35  

55  

2.2  

—  

m



 

m

  

V

R

DS(ON)  

Static Drain-Source On-Resistance  

V

GS(th)  

△

V

GS(th)  

gfs  

Gate Threshold Voltage  

1.5  

-3.2  

2.3  

V

GS

=V

DS

, I

D

=250uA  

V

DS

=10V , I

D

=1.5A  

V

GS(th)

Temperature Coefficient  

Forward Transconductance  

—  

—  

mV/

℃  

S

—  

Dynamic and switching Characteristics  

Q

g  

Q

gs  

Q

gd  

T

d(on)  

T

r  

Total Gate Charge

2 , 3  

Gate-Source Charge

2 , 3  

Gate-Drain Charge

2 , 3  

Turn-On Delay Time

2 , 3  

Rise Time

2 , 3  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

3.1  

0.1  

1.7  

2.2  

6.9  

15.2  

4.5  

245  

40  

6.4  

0.5  

3.4  

4.5  

13.8  

30.4  

9

V

DS

=24V , V

GS

=10V , I

D

=2A  

nC  

ns  

V

DD

=24V , V

GS

=10V , R

G

=3.3

  

Turn-Off Delay Time

2 , 3  

Fall Time

2 , 3  

I

D

=1A  

T

d(off)  

T

f  

C

iss  

C

oss  

C

rss  

R

g  

Input Capacitance  

490  

80  

V

DS

=25V , V

GS

=0V , F=1MHz  

V

GS

=0V, V

DS

=0V, F=1MHz  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

Gate resistance  

78  

158  

1.8  

0.9  



Drain-Source Diode Characteristics and Maximum Ratings  

Symbol  

I

S  

Parameter  

Continuous Source Current  

Pulsed Source Current  

Diode Forward Voltage  

Conditions  

Min.  

—  

Typ.  

—  

Max.  

5.1  

Unit  

A

V

G

=V

D

=0V , Force Current  

I

SM  

—  

—  

10.2  

1

A

V

SD  

—  

—  

V

V

GS

=0V , I

S

=1A , T

J

=25

℃  

Note :  

1. Repetitive

 

Rating : Pulsed width limited by maximum junction temperature.  

2. The

 

data tested by pulsed , pulse width

 

≦

300us , duty cycle

 

≦

2%.  

3. Essentially

 

independent of operating temperature.  

Potens semiconductor corp.  

Ver.1.02  

2

30V N-Channel MOSFETs  

PDN3916S  

T

J

, Junction Temperature (

℃

)  

T

J

, Junction Temperature (

℃

)  

Fig.2 Normalized

 

RDSON vs. T

J  

Fig.1 Continuous

 

Drain Current vs. T

J  

T

J

, Junction Temperature (

℃

)  

Qg , Gate Charge (

nC

)  

Fig.3 Normalized

 

V

th

vs. T

J  

Fig.4 Gate

 

Charge Waveform  

V

DS

, Drain to Source

V

o

ltage (V)  

Square Wave Pulse Duration (s)  

Fig.5 Normalized

 

Transient Impedance  

Fig.6 Maximum

 

Safe Operation Area  

Potens semiconductor corp.  

Ver.1.02  

3

30V N-Channel MOSFETs  

PDN3916S  

V

DS  

90%  

10%  

V

GS  

T

d(on)  

T

r  

T

on  

T

d(off)  

T

f  

T

off  

Fig.7 Switching

 

Time Waveform  

Fig.8 Gate

 

Charge Waveform  

Potens semiconductor corp.  

Ver.1.02  

4

30V N-Channel MOSFETs  

PDN3916S  

SOT23-3S PACKAGE INFORMATION  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min  

Max  

Min  

Max  

A

A1  

b

0.900  

0.001  

0.300  

0.080  

2.800  

1.200  

2.100  

1.110  

0.100  

0.500  

0.180  

3.040  

1.400  

2.640  

0.035  

0.000  

0.012  

0.003  

0.110  

0.047  

0.080  

0.044  

0.004  

0.020  

0.008  

0.120  

0.055  

0.104  

c

D

E

E1  

e

0.950 TY

P

.  

0.037 TY

P

.  

e1  

L

1.780  

2.040  

0.070  

0.080  

0.550 RE

F

.  

0.022 RE

F

.  

L1  

θ

0.100  

1°  

0.500  

10°  

0.004  

1°  

0.020  

10°  

Potens semiconductor corp.  

Ver.1.02  

5