Potens-PDS6904

60V N-Channel MOSFETs  

PDS6904  

General Description  

BVDSS  

60V  

RDSON  

12m



 

ID  

These N-Channel enhancement mode power field effect  

transistors are using trench DMOS technology. This  

advanced technology has been especially tailored to  

minimize on-state resistance, provide superior switching  

performance, and withstand high energy pulse in the  

avalanche and commutation mode. These devices are  

well suited for high efficiency fast switching applications.  

10A  

Features  



60V,10A, RDS(ON) =12m

Ω

@VGS = 10V  



Improved dv/dt capability  



Fast switching  



100% EAS Guaranteed  



Green Device Available  

SOP8 Pin Configuration  

Applications  

D



Motor Drive  



Power Tools  



LED Lighting  

D

D

D

D

G

G

S

S

S

S

Absolute Maximum Ratings

Tc=25

℃

unless otherwise noted  

Symbol  

Parameter  

Rating  

60  

Units  

V

V

DS  

V

GS  

Drain-Source Voltage  

Gate-Sou

r

ce Voltage  

±

20  

10  

V

Drain Current

–

Continuous (T

C

=25

℃

)  

Drain Current

–

Continuous (T

C

=100

℃

)  

Drain Current

–

Pulsed

1  

A

I

D  

6.3  

A

I

DM  

40  

A

EAS  

IAS  

Single Pulse Avalanche Energy

2  

Single Pulse Avalanched Current

2  

Power Dissipation (T

C

=25

℃

)  

61  

mJ  

A

35  

2.5  

W

P

D  

Power Dissipation

–

Derate above 25

℃  

Storage

T

e

mperature Range  

0.02  

-55 to 150  

-55 to 150  

W/

℃  

℃

℃

T

STG  

T

J  

Operating Junction Temperature Range  

Thermal Characteristics  

Symbol  

Parameter  

Thermal Resistance Junction to ambient  

Typ.  

—  

Max.  

Unit  

R

θ

JA  

50  

℃

/W  

Potens semiconductor corp.  

Ver.1.03  

1

60V N-Channel MOSFETs  

PDS6904  

Electrical Characteristics

(T

J

=25

℃

, unless otherwise noted)  

Off Characteristics  

Symbol  

Parameter  

Conditions  

V

GS

=0V , I

D

=250uA  

Min.  

60  

—  

Typ.  

—  

Max.  

—  

Unit  

V

BV

DSS  

Drain-Source Breakdown Voltage  

BV

DSS

Temperature Coefficient  

△

BV

DSS

/

△

T

J  

Reference to 25

℃

, I

D

=1mA  

V

DS

=60V , V

GS

=0V , T

J

=25

℃  

V

DS

=48V , V

GS

=0V , T

J

=125

℃  

0.07  

—  

—  

V/

℃  

uA  

—  

1

I

DSS  

I

GSS  

Drain-Source Leakage Current  

Gate-Source Leakage Current  

—  

—  

10  

uA  

V

GS

=

±

20V , V

DS

=0V  

—  

—  

±

100  

nA  

On Characteristics  

V

GS

=10V , I

D

=10A  

V

GS

=4.5V , I

D

=6A  

—  

—  

10  

12  

12  

15  

2.5  

—  

m



 

m

  

V

R

DS(ON)  

Static Drain-Source On-Resistance

3  

V

GS(th)  

△

V

GS(th)  

gfs  

Gate Threshold Voltage  

1.2  

—  

1.6  

-4  

V

GS

=V

DS

, I

D

=250uA  

V

DS

=10V , I

D

=6A  

V

GS(th)

Temperature Coefficient  

Forward Transconductance  

mV/

℃  

S

—  

11.7  

—  

Dynamic and switching Characteristics  

Q

g  

Q

gs  

Q

gd  

T

d(on)  

T

r  

Total Gate Charge

3 , 4  

Gate-Source Charge

3 , 4  

Gate-Drain Charge

3 , 4  

Turn-On Delay Time

3 , 4  

Rise Time

3 , 4  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

39.2  

5.9  

59  

9

V

DS

=30V , V

GS

=10V , I

D

=10A  

nC  

ns  

8.8  

14  

9.6  

18  

V

DD

=15V , V

GS

=10V , R

G

=6

  

28.2  

45.3  

10.9  

2100  

165  

80  

54  

Turn-Off Delay Time

3 , 4  

Fall Time

3 , 4  

86  

I

D

=1A  

T

d(off)  

T

f  

21  

C

iss  

C

oss  

C

rss  

R

g  

Input Capacitance  

3050  

240  

120  

3.2  

V

DS

=25V , V

GS

=0V , F=1MHz  

V

GS

=0V, V

DS

=0V, F=1MHz  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

Gate resistance  

1.6  



Drain-Source Diode Characteristics and Maximum Ratings  

Symbol  

I

S  

Parameter  

Continuous Source Current  

Pulsed Source Current

3  

Diode Forward Voltage

3  

Reverse Recovery Time  

Reverse Recovery Charge  

Conditions  

Min.  

—  

Typ.  

—  

Max.  

10  

40  

1

Unit  

A

V

G

=V

D

=0V , Force Current  

I

SM  

—  

—  

A

V

SD  

t

rr  

V

GS

=0V , I

S

=1A , T

J

=25

℃  

V

GS

=0V,I

S

=1A , di/dt=100A/µs  

T

J

=25

℃  

—  

—  

V

—  

—  

—  

ns  

nC  

Q

rr  

—  

—  

—  

Note :  

1. Repetitive

 

Rating : Pulsed width limited by maximum junction temperature.  

2. V

DD

=25V,V

GS

=10V,L=0.1mH,I

AS

=35A.,R

G

=25



,

Starting T

J

=25

℃

.  

3. The

 

data tested by pulsed , pulse width

 

≦

300us , duty cycle

 

≦

2%.  

4. Essentially

 

independent of operating temperature.  

Potens semiconductor corp.  

Ver.1.03  

2

60V N-Channel MOSFETs  

PDS6904  

T

C

, Case Temperature (

℃

)  

T

J

, Junction Temperature (

℃

)  

Fig.2 Normalized

 

RDSON vs. T

J  

Fig.1 Continuous

 

Drain Current vs. T

C  

T

J

, Junction Temperature (

℃

)  

Qg , Gate Charge (nC)  

Fig.3 Normalized

 

V

th

vs. T

J  

Fig.4 Gate

 

Charge Waveform  

V

DS

, Drain to Source

V

o

ltage (V)  

Square Wave Pulse Duration (s)  

Fig.5 Normalized

 

Transient Response  

Fig.6 Maximum

 

Safe Operation Area  

Potens semiconductor corp.  

Ver.1.03  

3

60V N-Channel MOSFETs  

PDS6904  

V

DS  

1

2

BV

DSS  

BV

DSS

-V

DD  

EAS=  

BV

DSS  

L x I

AS

2

x  

90%  

V

DD  

I

AS  

10%  

V

GS  

T

d(on)  

T

r  

T

on  

T

d(off)  

T

f  

T

off  

V

GS  

Fig.7 Switching

 

Time Waveform  

Fig.8 EAS

 

Waveform  

Potens semiconductor corp.  

Ver.1.03  

4

60V N-Channel MOSFETs  

PDS6904  

SOP8 PACKAGE INFORMATION  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

MAX  

1.750  

0.250  

1.500  

0.490  

0.260  

5.100  

4.100  

6.200  

MIN  

1.350  

0.100  

1.300  

0.350  

0.190  

4.700  

3.700  

5.800  

MAX  

0.069  

0.010  

0.059  

0.019  

0.010  

0.201  

0.161  

0.244  

MIN  

0.053  

0.004  

0.051  

0.014  

0.007  

0.185  

0.146  

0.228  

A

A1  

A2  

b

C

D

E

E1  

e

1.27BSC  

0.05BSC  

L

0.900  

8°  

0.400  

0°  

0.035  

8°  

0.016  

0°  

θ

Potens semiconductor corp.  

Ver.1.03  

5