Powerex-Inc–C702LN

The C702

 

is a medium voltage, high  

current disc pack SCR

 

employing a Bar  

gate, amplifying

 

gate structure. This  

amplifying gate design allows the SCR to  

be reliably operated at high di/dt and  

high dv/dt conditions in phase control  

applications.  

FEATURES:  

Low On-State Voltage  

High di/dt Capability  

High dv/dt Capability  

Hermetic Ceramic Package  

Excellent Surge and I

2

t Ratings  

APPLICATIONS:  

DC Power Supplies  

Motor Controls  

ORDERING INFORMATION  

AC Soft-Starters  

Select the complete Part Number using the table below.  

EXAMPLE: C702CB

 

is a 3200V-1000A SCR with 200ma  

IGT and 12 inch gate and cathode potential leads.  

Voltage Voltage

 

Current  

PART  

Rating  

V

DRM

-V

RRM  

Code  

Rating  

I

tavg  

C702  

2400V  

2600V  

2800V  

3000V  

3200V  

LD  

LM  

LN  

CP  

CB  

1000A  

Revised:  

5/11/2004  

Page 1  

C702  

Phase Control Thyristor  

1000 Amperes

 

3200 Volts  

Powerex, Inc., 200

 

Hillis Street, Youngwood, Pennsylvania 15697-1800

 

(724)925-7272  

Absolute Maximum Ratings  

Characteristic  

Symbol  

Rating  

Units  

V

DRM

-V

RRM  

V

RSM  

I

T(Avg.)  

I

T(RMS)  

I

T(Avg.)  

I

T(RMS)  

Repetitive Peak Voltage  

3200  

V

RRM

+ 100  

Volts  

Volts  

A

Non-repetitive Transient Peak Reverse Voltage  

Average On-State Current,

 

T

C

=74°C  

RMS On-State Current,

 

T

C

=74°C  

Average On-State Current,

 

T

C

=55°C  

RMS On-State Current,

 

T

C

=55°C  

1000  

1571  

A

1220  

A

1916  

A

Peak One Cycle Surge Current, 60Hz, V

R

=0V  

Peak One Cycle Surge Current, 50Hz, V

R

=0V  

I

TSM  

21,500  

20,500  

A

I

TSM  

A

Fuse Coordination I

2

t, 60Hz  

I

2

t  

I

2

t  

A

2

s  

1.93E+06  

2.10E+06  

100  

Fuse Coordination I

2

t, 50Hz  

A

2

s  

Critical Rate-of-Rise of On-State Current  

Repetitive  

di/dt  

A/us  

Critical Rate-of-Rise of On-State Current  

di/dt  

300  

A/us  

Non-Repetitive  

P

GM  

Peak Gate Power, 100us  

16  

5

Watts  

Watts  

P

G(avg)  

Average Gate Power  

Operating Temperature  

Storage Temperature  

Tj  

T

Stg.  

-40 to+125  

-50 to+150  

°C  

°C  

Approximate Weight  

1

lb  

0.45  

Kg  

Mounting Force  

5500-6000  

24.5 – 26.7  

lbs  

Knewtons  

Page 2  

C702  

Phase Control Thyristor  

1000 Amperes

 

3200 Volts  

Powerex, Inc., 200

 

Hillis Street, Youngwood, Pennsylvania 15697-1800

 

(724)925-7272  

Electrical Characteristics,

 

Tj=25°C unless otherwise specified  

Rating  

Characteristic  

Symbol  

Test Conditions  

min  

typ  

max  

Units  

Repetitive Peak Forward  

Leakage Current  

I

DRM  

Tj=125°C, V

DRM

=Rated  

150  

ma  

Repetitive Peak Reverse  

Leakage Current  

I

RRM  

V

TM  

Tj=125°C, V

RRM

=Rated  

Tj=125°C, I

TM

=2000A  

150  

1.85  

ma  

V

Peak On-State Voltage  

V

V

0  

r

Tj=125°C  

15%

I

TM

–

π

•I

TM  

0.944  

4.25E-04  

V

Ω

VTM = V

O

+

r•

I

TM  

V

TM

Model, High Level  

VTM = V

O

+

r•

I

TM  

V

0  

r

Tj=125°C  

π

•I

TM

– I

TSM  

1.18  

3.49E-04  

V

Ω

V

TM

Model,  

4-Term  

A

B

C

Tj=125°C  

15%I

TM

– I

TSM  

0.363  

0.108  

V

TM

= A + B•Ln(I

TM

) +  

½

C•(I

TM

) + D•(I

TM

)  

3.42E-04  

-8.33E-04  

D

t

d  

V

D

= 0.5•V

DRM  

Turn-On Delay Time  

2.5  

us  

us  

Gate Drive:

 

40V – 20

Ω

 

Turn-Off Time  

dv/dt

(Crit)  

tq  

Tj=125°C  

400  

dv/dt = 20V/us to 80% V

DRM  

dv/dt  

Tj=125°C Exp.

 

Waveform  

V

D

=80% Rated  

400  

V/us  

I

GT  

V

GT  

V

GRM  

Tj=25°C V

D

= 12V  

Gate Trigger Current  

Gate Trigger Voltage  

Peak Reverse Gate Voltage  

30  

0.8  

100  

2.0  

200  

4.5  

5

ma  

V

V

Thermal Characteristics  

Rating  

typ  

Characteristic  

Thermal Resistance  

Symbol  

Test Conditions  

min  

max  

Units  

R

Θ

jc  

R

Θ

cs  

Junction to Case  

Double side cooled  

Double side cooled  

Double side cooled  

0.021  

0.004  

0.023  

0.006  

°C/Watt  

°C/Watt  

Case to Sink  

Z

Θ

jc  

Thermal Impedance Model  

Σ

(A(

N

)•(1-exp(-t/

Tau

(

N

))))  

Z

Θ

jc

(t) =  

where:  

N =  

1

2

3

4

A(N

) =

 

7.26E-04 1.58E-03 4.55E-03 1.62E-02  

T

au(N) =

 

4.49E-05 8.21E-03 8.84E-02 1.31E+00  

Page 3  

C702  

Phase Control Thyristor  

1000 Amperes

 

3200 Volts  

Powerex, Inc., 200

 

Hillis Street, Youngwood, Pennsylvania 15697-1800

 

(724)925-7272  

MAXIMUM TRANSIENT THERMAL  

IMPEDANCE  

Maximum On-State Voltage Drop  

10.0  

8.0  

6.0  

4.0  

2.0  

0.0  

2.5E-02  

2.0E-02  

1.5E-02  

1.0E-02  

5.0E-03  

0.0E+00  

Tj = 125°C  

100  

1000  

10000  

100000  

0.001  

0.01  

0.1  

Time (sec)  

1

10  

ITM (A)  

Maximum Allowable Case Temperature  

Maximum On-State Power Dissipation  

Sinusoidal Waveform  

Sinusoidal Waveform  

130  

120  

110  

100  

90  

2500  

2000  

1500  

1000  

500  

120° 180°  

CONDUCTION ANGLE  

90°  

60°  

0°  

180°  

360°  

CONDUCTION ANGLE  

60°  

80  

70  

60  

90°  

120°  

0°  

180°  

360°  

180°  

0

0

300  

600  

Iavg (A)  

900  

1200  

0

400  

800  

1200  

Iavg (A)  

Maximum Allowable Case Temperature  

Maximum On-State Power Dissipation  

Square Waveform  

Square Waveform  

130  

120  

110  

100  

90  

80  

70  

60  

3000  

2500  

2000  

1500  

1000  

500  

360°  

CONDUCTION ANGLE  

180°  

120°  

90°  

60°  

0°  

180°  

360°  

CONDUCTION ANGLE  

0°  

180°  

360°  

60° 90°  

360°  

120°  

180°  

0

0

500  

1000  

1500  

0

500  

1000  

1500  

Iavg (A)  

Iavg (A)  

Page 4