pSemi-PE42553B-Z
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PE42553
Document Category: Product Specification
UltraCMOS® SPDT RF Switch, 9 kHz–8 GHz
Features
Applications
•
T
e
st
and measurement
• Excellent
power handling: 36 dBm CW and 38 dBm
pulsed power in 50
Ω
@ 8 GHz
▪
Signal sources
• High
linearity: IIP3 of 66 dBm
• High
isolation
▪
Communication testers
▪
Spectrum analyzers
▪
45 dB @ 3 GHz
▪
Network analyzers
▪
41 dB @ 8 GHz
• Automated
test equipment
• General
purpose TX/RX switch
• HaRP™
technology enhanced
▪
Fast settling time
Figure 1 •
PE42553 Functional Diagram
▪
No gate and phase lag
▪
No drift in insertion loss and phase
• High
ESD performance
RFC
▪
2.5 kV HBM on all pins, 4 kV HBM on RF pins to
GND
▪
1 kV CDM on all pins
RF1
RF2
• Packaging
– 16-lead 3 × 3 mm QFN
50Ω
50Ω
CMOS Control Driver and ESD
LS
CTRL V
SS_EXT
Product Description
The PE42553 is a HaRP
TM
technology-enhanced absorptive SPDT RF switch that supports a broad frequency
range from 9 kHz to 8 GHz. This general purpose switch maintains excellent linearity, high RF performance and
fast settling time making this device ideal for test and measurement (T&M), automated test equipment (ATE)
and other high performance wireless applications.
The PE42553 is a pin-compatible version of the PE42552 with improved power handling capability of 36 dBm
continuous wave (CW) and 38 dBm pulsed power in 50
Ω
at 8 GHz. No blocking capacitors are required if DC
voltage is not present on the RF ports. The PE42553 is manufactured on pSemi’s UltraCMOS
®
process, a
patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate.
©2016, 2018 pSemi Corporation. All rights reserved. • Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121
Product Specification
DOC-76991-2 – (11/2018)
PE42553
SPDT RF Switch
pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
Optional External V
SS
For proper operation, the V
SS_EXT
pin must be grounded or tied to the V
SS
voltage specified in
Table 2
. When the
V
SS_EXT
pin is grounded, FE
T
s
i
n the switch are biased with an internal negative voltage generator. For applica-
tions that require the lowest possible spur performance, V
SS_EXT
can be applied externally to bypass the internal
negative voltage generator.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in
Table 1
may cause permanent damage. Operation should be
restricted to the limits in
Table 2
. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in
Table 1
.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 •
Absolute Maximum Ratings for PE42553
Parameter/Condition
Min
Max
Unit
Supply voltage, V
DD
–0.3
–0.3
–0.3
5.5
3.6
3.6
V
V
V
Digital input voltage, CTRL
LS input voltage
RF input power, CW (RFC–RFX)
(1)
9 kHz–10 MHz
Fig. 2
,
Fig. 3
dBm
dBm
37
>10 MHz–8 GHz
RF input power, pulsed (RFC–RFX)
(2)
9 kHz–10 MHz
Fig. 2
,
Fig. 3
Fig. 4
,
Fig. 5
dBm
dBm
>10 MHz–8 GHz
RF input power into terminated ports, CW (RFX)
(1)
Fig. 2
,
Fig. 3
dBm
dBm
9–800 kHz
28
>800 kHz–8 GHz
Maximum junction temperature
Storage temperature range
+150
+150
°C
°C
–65
Page 2 of 20
DOC-76991-2 – (11/2018)
PE42553
SPDT RF Switch
Table 1 •
Absolute Maximum Ratings for PE42553
Parameter/Condition
Min
Max
Unit
ESD voltage HBM
(3)
RF pins to GND
All pins
4000
2500
V
V
ESD voltage MM, all pins
(4)
ESD voltage CDM, all pins
(5)
200
V
V
1000
Notes:
1) 100% duty cycle, all bands, 50
Ω
.
2) Pulsed, 5% duty cycle of 4620
μ
s period, 50
Ω
.
3) Human body model (MIL-STD 883 Method 3015).
4) Machine model (JEDEC JESD22-A115).
5) Charged device model (JEDEC JESD22-C101).
DOC-76991-2 – (11/2018)
Page 3 of 20
PE42553
SPDT RF Switch
Recommended Operating Conditions
Table 2
list the recommending operating condition for PE42553. Devices should not be operated outside the
recommended operating conditions listed below.
Table 2 •
Recommended Operating Condition for PE42553
Parameter
Min
Typ
Max
Unit
Normal mode (V
SS_EXT
= 0V)
(1)
Supply voltage, V
DD
2.3
5.5
V
Supply current, I
DD
120
200
μ
A
Bypass mode (V
SS_EXT
= –3.4
V
, V
DD
≥
3.4V for full spec. compliance)
(2)
Supply voltage, V
DD
2.6
3.4
50
5.5
80
V
μ
A
V
Supply current, I
DD
Negative supply voltage, V
SS_EXT
Negative supply current, I
SS
–3.6
–40
–2.6
–16
μ
A
Normal or Bypass mode
Digital input high, CTRL
Digital input low, CTRL
Digital input current, I
CTRL
1.17
–0.3
3.6
0.6
10
V
V
μ
A
RF input power, CW (RFC–RFX)
(3)
9 kHz–10 MHz
Fig. 2
,
Fig. 3
dBm
dBm
36
>10 MHz–8 GHz
RF input power, pulsed (RFC–RFX)
(4)
9 kHz–10 MHz
Fig. 2
,
Fig. 3
Fig. 4
,
Fig. 5
dBm
dBm
>10 MHz–8 GHz
RF input power, hot switch, CW
(3)
9–300 kHz
Fig. 2
,
Fig. 3
dBm
dBm
20
>300 kHz–8 GHz
RF input power into terminated ports, CW (RFX)
(3)
Fig. 2
,
Fig. 3
dBm
dBm
9–600 kHz
26
>600 kHz–8 GHz
Operating temperature range
–40
+25
+85
°C
Notes:
1) Normal mode: connect V
2) Bypass mode: use V
(pin 13) to GND (V
= 0V) to enable internal negative voltage generator.
SS_EXT
SS_EXT
(pin 13) to bypass and disable internal negative voltage generator.
SS_EXT
3) 100% duty cycle, all bands, 50
Ω
.
4) Pulsed, 5% duty cycle of 4620
μ
s period, 50
Ω
.
Page 4 of 20
DOC-76991-2 – (11/2018)
PE42553
SPDT RF Switch
Electrical Specifications
Table 3
provides the PE42553 key electrical specifications at 25 °C (Z
S
= Z
L
= 50
Ω
), unless otherwise specified.
Normal mode
(1)
is at V
DD
= 3.3V and V
SS_EXT
= 0
V
.
B
ypass mode
(2)
is at V
DD
= 3.4V and V
SS_EXT
= –3.4
V
.
Table 3 •
PE42553 Electrical Specifications
Parameter
Path
Condition
Min
Typ Max Unit
As
8 GHz
Operating frequency
9 kHz
shown
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
0.60
0.80
0.85
0.80
1.00
1.05
dB
dB
dB
Insertion loss
RFC–RFX
RFX–RFX
RFC–RFX
RFC–RFX
RFC–RFX
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
70
46
33
90
54
36
dB
dB
dB
Isolation
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
80
42
38
90
45
41
dB
dB
dB
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
23
17
15
dB
dB
dB
Return loss (active port)
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
23
17
15
dB
dB
dB
Return loss
(RFC port)
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
32
24
19
dB
dB
dB
Return loss
(terminated port)
RFX
Input 0.1dB compression
point
(3)
Fig. 4
Fig. 5
dBm
dBm
RFC–RFX
10 MHz–8 GHz
Input IP2
RFC–RFX
RFC–RFX
834 MHz, 1950 MHz
120
66
dBm
dBm
μ
s
Input IP3
834 MHz, 1950 MHz and 2700 MHz
50% CTRL to 0.05 dB final value
50% CTRL to 90% or 10% of RF
Settling time
Switching time
15
20
5.5
9.5
μ
s
Notes:
1) Normal mode: connect V
(pin 29) to GND (V
= 0V) to enable internal negative voltage generator.
SS_EXT
SS_EXT
2) Bypass mode: use V
(pin 29) to bypass and disable internal negative voltage generator.
SS_EXT
3) The input 0.1dB compression point is a linearity figure of merit. Refer to
Table 2
for the RF input power (50
Ω
).
DOC-76991-2 – (11/2018)
Page 5 of 20
PE42553
SPDT RF Switch
Switching Frequency
Control Logic
The PE42553 has a maximum 25 kHz switching rate
in normal mode (pin 13 tied to ground). A faster
switching rate is available in bypass mode (pin 13 tied
to V
SS_EXT
). The rate at which the PE42553 can be
switched is then limited to the switching time as
specified in
Table 3
.
Table 5
provides the control logic truth table for the
PE42553.
Table 5 •
Truth Table for PE42553
LS
CTRL
RFC–RF1 RFC–RF2
Switching frequency describes the time duration
between switching events. Switching time is the time
duration between the point the control signal reached
50% of the final value and the point the output signal
reaches within 10% or 90% of its target value.
0
0
1
1
0
1
0
1
OFF
ON
ON
OFF
OFF
ON
ON
OFF
Spur-Free Performance
Logic Select
The Logic Select feature is used to determine the
definition for the CTRL pin.
The typical spurious performance of the PE42553 in
normal mode is –152 dBm (pin 13 tied to ground). If
spur-free performance is desired, the internal
negative voltage generator can be disabled by
applying a negative voltage to V
SS_EXT
(pin 13).
Thermal Data
Psi-JT (
JT
), junction top-of-package, is a thermal
metric to estimate junction temperature of a device on
the customer application PCB (JEDEC JESD51-2).
JT
= (T
J
– T
T
)/P
where
JT
= junction-to-top of package characterization
parameter, °C/W
T
J
= die junction temperature, °C
T
T
= package temperature (top surface, in the
center), °C
P = power dissipated by device, Watts
Table 4 •
Thermal Data for PE42553
Parameter
Typ Unit
41
93
°C/W
°C/W
JT
JA
, junction-to-ambient thermal resistance
Page 6 of 20
DOC-76991-2 – (11/2018)
PE42553
SPDT RF Switch
Figure 2 •
Power De-rating Curve for 9 kHz–10 MHz @ 25 °C Ambient (50Ω)
(*)
Note: *
V
= –V
.
DD
SS_EXT
2.6 Vdd
2.8 Vdd
3.0 Vdd
3.2 Vdd
3.4 Vdd
40
35
30
25
20
15
10
5
0
1
10
100
1000
10000
Frequency (kHz)
Figure 3 •
Power De-rating Curve for 9 kHz–10 MHz @ 85 °C Ambient (50Ω)
(*)
Note: *
V
= –V
.
SS_EXT
DD
2.6 V
2.8 V
3.0 V
3.2 V
3.4 V
DD
DD
DD
DD
DD
40
35
30
25
20
15
10
5
0
1
10
100
1000
10000
Frequency (kHz)
DOC-76991-2 – (11/2018)
Page 7 of 20
PE42553
SPDT RF Switch
Figure 4 •
Power De-rating Curve for 10 MHz–8 GHz @ 25 °C Ambient (50Ω)
(*)
Note: *
Normal mode at 2.3V
≥
V
≥
5.5V and V
SS_EXT
= 0V, Bypass mode at V
DD
= 3.4V and V
= –3.4
V
.
SS_EXT
DD
P0.1dB Compression / Abs. Max. RF Input Power, Pulsed @ 25°C Ambient
Max. RF Input Power, Pulsed @ 25°C Ambient
Max. RF Input Power, CW @ 25°C Ambient
41.5
41
40.5
40
39.5
39
38.5
38
37.5
37
36.5
36
35.5
35
34.5
0
1
2
3
4
5
6
7
8
Frequency (GHz)
Figure 5 •
Power De-rating Curve for 10 MHz–8 GHz @ 85 °C Ambient (50Ω)
(*)
Note: *
Normal mode at 2.3V
≥
V
≥
5.5V and V
SS_EXT
= 0V, Bypass mode at V
DD
= 3.4V and V
= –3.4
V
.
SS_EXT
DD
P0.1dB Compression / Abs. Max. RF Input Power, Pulsed @ 85°C Ambient
Max. RF Input Power, Pulsed @ 85°C Ambient
Max. RF Input Power, CW @ 85°C Ambient
41
40.5
40
39.5
39
38.5
38
37.5
37
36.5
36
35.5
35
34.5
0
1
2
3
4
5
6
7
8
Frequency (GHz)
Page 8 of 20
DOC-76991-2 – (11/2018)
PE42553
SPDT RF Switch
Typical Performance Data
Figure 6
–
Figure 17
show the typical performance data @ 25 °C and V
DD
= 3.4V (Z
S
= Z
L
= 50
Ω
), unless
otherwise specified.
Figure 6 •
Insertion Loss vs Temperature (RFC–RFX)
− 4 0 ° C
+25°C
+85°C
0
−0.5
−1
−1.5
−2
−2.5
−3
−3.5
−4
−4.5
−5
0
1
2
3
4
5
6
7
8
Frequency (GHz)
DOC-76991-2 – (11/2018)
Page 9 of 20
PE42553
SPDT RF Switch
Figure 7 •
Insertion Loss vs V
DD
(RFC–RFX)
2.3V
3.4V
5.5V
0
−0.5
−1
−1.5
−2
−2.5
−3
−3.5
−4
−4.5
−5
0
1
2
3
4
5
6
7
8
Frequency (GHz)
Figure 8 •
RFC Port Return Loss vs Temperature
− 4 0 ° C
+25°C
+85°C
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
0
1
2
3
4
5
6
7
8
Frequency (GHz)
Page 10 of 20
DOC-76991-2 – (11/2018)
PE42553
SPDT RF Switch
Figure 9 •
RFC Port Return Loss vs V
DD
2.3V
3.4V
5.5V
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
0
1
2
3
4
5
6
7
8
Frequency (GHz)
Figure 10 •
Active Port Return Loss vs Temperature
− 4 0 ° C
+25°C
+85°C
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
0
1
2
3
4
5
6
7
8
Frequency (GHz)
DOC-76991-2 – (11/2018)
Page 11 of 20
PE42553
SPDT RF Switch
Figure 11 •
Active Port Return Loss vs V
DD
2.3V
3.4V
5.5V
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
0
1
2
3
4
5
6
7
8
Frequency (GHz)
Figure 12 •
Terminated Port Return Loss vs Temperature
− 40C
+25C
+85C
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
0
1
2
3
4
5
6
7
8
Frequency (GHz)
Page 12 of 20
DOC-76991-2 – (11/2018)
PE42553
SPDT RF Switch
Figure 13 •
Terminated Port Return Loss vs V
DD
2.3V
3.4V
5.5V
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
0
1
2
3
4
5
6
7
8
Frequency (GHz)
Figure 14 •
Isolation vs Temperature (RFX–RFX)
− 4 0 ° C
+25°C
+85°C
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
−100
0
1
2
3
4
5
6
7
8
Frequency (GHz)
DOC-76991-2 – (11/2018)
Page 13 of 20
PE42553
SPDT RF Switch
Figure 15 •
Isolation vs V
DD
(RFX–RFX)
2.3V
3.4V
5.5V
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
−100
0
1
2
3
4
5
6
7
8
Frequency (GHz)
Figure 16 •
Isolation vs Temperature (RFC–RFX)
−40°C
+25°C
+85°C
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
−100
0
1
2
3
4
5
6
7
8
Frequency (GHz)
Page 14 of 20
DOC-76991-2 – (11/2018)
PE42553
SPDT RF Switch
Figure 17 •
Isolation vs V
DD
(RFC–RFX)
2.3V
3.4V
5.5V
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
−100
0
1
2
3
4
5
6
7
8
Frequency (GHz)
DOC-76991-2 – (11/2018)
Page 15 of 20
PE42553
SPDT RF Switch
Evaluation Kit
The SPDT switch evaluation board was designed to ease customer evaluation of pSemi’s PE42553. The RF
common port is connected through a 50
Ω
transmission line via the SMA connector, J1. RF1 and RF2 ports are
connected through 50
Ω
transmission lines via SMA connectors J2 and J3, respectively. A 50
Ω
through trans-
mission line is available via SMA connectors J5 and J6, which can be used to de-embed the loss of the PCB. J4
provides DC and digital inputs to the device.
For the true performance of the PE42553 to be realized, the PCB must be designed in such a way that RF trans-
mission lines and sensitive DC I/O traces are well isolated from one another.
Figure 18 •
Evaluation Kit Layout for PE42553
Page 16 of 20
DOC-76991-2 – (11/2018)
PE42553
SPDT RF Switch
Pin Information
Table 6 •
Pin Descriptions for PE42553
This section provides pinout information for the
PE42553.
Figure 19
shows the pin map of this device
for the available package.
Table 6
provides a
description for each pin.
Pin
Name
Pin No.
Description
1, 3–6,
8–10, 12
GND
Ground
Figure 19 •
Pin Configuration (Top View)
RF1
(1)
RFC
(1)
RF2
(1)
2
RF port 1
7
RF common
Pin 1 Dot
Marking
11
13
14
RF port 2
(2)
External V
SS
negative voltage control
Digital control logic input
V
SS_EXT
CTRL
1
2
3
4
12
11
10
9
GND
RF1
GND
RF2
Logic Select: used to determine the
definition for the CTRL pin (see
Table 5
)
15
16
LS
Exposed
Ground Pad
V
DD
Supply voltage
GND
GND
GND
GND
Exposed pad: ground for proper oper-
ation
Pad
GND
Notes:
1) RF
pins 2, 7 and 11 must be at 0 VDC. The RF pins do not require
DC blocking capacitors for proper operation if the 0 VDC
requirement is met.
2) Use V
(pin 13) to bypass and disable internal negative
SS_EXT
voltage generator. Connect V
(pin 13) to GND (V
=
SS_EXT
SS_EXT
0V) to enable internal negative voltage generator.
DOC-76991-2 – (11/2018)
Page 17 of 20
PE42553
SPDT RF Switch
Packaging Information
This section provides packaging data including the moisture sensitivity level, package drawing, package
marking and tape-and-reel information.
Moisture Sensitivity Level
The moisture sensitivity level rating for the PE42553 in the 16-lead 3 × 3 mm QFN package is MSL3.
Package Drawing
Figure 20 •
Package Mechanical Drawing for 16-lead 3 × 3 × 0.85 mm QFN
0.10
(2X)
C
A
3.00
0.30
(X16)
0.50
(X12)
1.70 0.05
B
9
12
0.750
(X16)
0.50
(X12)
13
8
1.70 0.05
1.75
3.75
3.00
16
5
0.25 0.05
(X16)
0.10
(2X)
C
4
1
0.30 0.05
(X16)
1.50
1.75
3.75
Pin #1 Corner
TOP VIEW
SIDE VIEW
BOTTOM VIEW
RECOMMENDED LAND PATTERN
0.10
0.05
C
C
0.10
0.05
C
C
A B
0.85 0.05
ALL FEATURES
SEATING PLANE
0.203
0.05
C
T
o
p-Marking Specification
Figure 21 •
Package Marking Specifications for PE42553
42553
=
Pin 1 indicator
YY =
Last two digits of assembly year
WW =
Assembly work week
YYWW
ZZZZZZ
ZZZZZZ =
Assembly lot code (maximum six characters)
Page 18 of 20
DOC-76991-2 – (11/2018)
PE42553
SPDT RF Switch
Tape and Reel Specification
Figure 22 •
Tape and Reel Specifications for 16-lead 3 × 3 × 0.85 mm QFN
Direction of Feed
Notes:
Ao
Bo
Ko
F
P1
W
3.30 0.1
3.30 0.1
1.10 0.1
5.50 0.05
8.00 0.1
12.00 0.3
1. Measured from centerline of sprocket hole to centerline of
pocket.
2. Cumulative tolerance of 10 sprocket holes
0.20.
3. Measured from centerline of sprocket hole to centerline of
sprocket.
Pin 1
Dimensions are in millimeters unless otherwise specified.
Device Orientation in
T
a
pe
DOC-76991-2 – (11/2018)
Page 19 of 20
PE42553
SPDT RF Switch
Ordering Information
Table 7
lists the available ordering codes for the PE42553 as well as available shipping methods.
Table 7 •
Order Codes for PE42553
Order Codes
Description
Packaging
Shipping Method
PE42553A-Z
PE42553B-Z
EK42553-01
EK42553-02
PE42553 SPDT RF switch
PE42553 SPDT RF switch
PE42553 Evaluation kit
PE42553 Evaluation kit
Green 16-lead 3 × 3 mm QFN
Green 16-lead 3 × 3 mm QFN
Evaluation kit
3000 units / T&R
3000 units / T&R
1 / Box
Evaluation kit
1 / Box
Document Categories
Advance Information
The product is in a formative or design stage. The datasheet contains design target specifications for product development. Specifications and
features may change in any manner without notice.
Preliminary Specification
The datasheet contains preliminary data. Additional data may be added at a later date. pSemi reserves the right to change specifications at any
time without notice in order to supply the best possible product.
Product Specification
The datasheet contains final data. In the event pSemi decides to change the specifications, pSemi will notify customers of the intended changes by
issuing a CNF (Customer Notification Form).
Sales Contact
For additional information, contact Sales at sales@psemi.com.
Disclaimers
The information in this document is believed to be reliable. However, pSemi assumes no liability for the use of this information. Use shall be entirely
at the user’s own risk. No patent rights or licenses to any circuits described in this document are implied or granted to any third party. pSemi’s
products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or
sustain life, or in any application in which the failure of the pSemi product could create a situation in which personal injury or death might occur.
pSemi assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications.
Patent Statement
pSemi products are protected under one or more of the following U.S. patents: patents.psemi.com
Copyright and Trademark
©2016, 2018 pSemi Corporation. All rights reserved. The Peregrine Semiconductor name, Peregrine Semiconductor logo and UltraCMOS are
registered trademarks and the pSemi name, pSemi logo, HaRP and DuNE are trademarks of pSemi Corporation in the U.S. and other countries.
Product Specification
DOC-76991-2 – (11/2018)
