PUOLOP-PT3402
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PT3402
30V N-Channel Enhancement Mode MOSFET
Features
V
DS
(V) = 30V
The PT3402 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
I
D
= 4 A
R
DS(ON)
< 55m
Ω
(V
GS
= 10V)
R
DS(ON)
< 70m
Ω
(V
GS
= 4.5V)
R
DS(ON)
< 110m
Ω
(V
GS
= 2.5V)
Package Dimensions
D
SOT-23
G
S
Millimete
Millimeter
RE
F
.
RE
F
.
Min.
Max.
3.00
2.50
1.40
0.50
0.10
Min.
1.80
0.90
0.10
0.35
0.92
Max.
2.00
1.1
0.20
0.70
0.98
A
B
C
D
E
2.80
2.30
1.20
0.30
0
G
H
K
J
L
F
0.45
0.55
M
0
°
10
°
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Maximum
Units
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
30
±12
4
V
V
V
GS
T
A
=25°C
T
A
=70°C
A
I
D
3.4
Pulsed Drain Current
B
I
DM
15
1.4
T
A
=25°C
T
A
=70°C
P
D
W
Power Dissipation
A
1
T
J
, T
STG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
70
100
63
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
90
125
80
t
≤
10s
Steady-State
Steady-State
R
θ
JA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
R
θ
JL
– 1 –
2012-7
PT3402
30V N-Channel Enhancement Mode MOSFET
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250
µ
A, V
GS
=0V
30
V
V
DS
=24V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
µ
A
5
T
J
=55°C
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±12V
=V
GS
I
D
=250
µ
A
100
1.4
nA
V
V
GS(th)
I
D(ON)
0.6
10
1
V
DS
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=4A
A
45
66
55
83
8
55
80
m
Ω
T
J
=125°C
R
DS(ON)
Static Drain-Source On-Resistance
m
Ω
m
Ω
V
GS
=4.5V, I
D
=3A
70
V
GS
=2.5V, I
D
=2A
110
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=4A
=1A,V
GS
=0V
S
V
A
I
S
0.8
1
Maximum Body-Diode Continuous Current
2.5
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
390
54.5
41
pF
pF
pF
Ω
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
3
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4.34
0.6
1.38
3.3
1
nC
nC
nC
ns
ns
ns
ns
V
GS
=4.5V, V
DS
=15V, I
D
=4A
V
GS
=10V, V
DS
=15V, R
L
=3.75
Ω
,
R
GEN
=6
Ω
t
D(off)
t
f
21.7
2.1
12
t
rr
I
F
=4A, dI/dt=100A/
µ
s
I
F
=4A, dI/dt=100A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Q
rr
6.3
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The
value in any a given application depends on the user’s specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The
R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The
SOA curve provides a single pulse rating.
– 2 –
2012-7
PT3402
30V N-Channel Enhancement Mode MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
15
12
9
10V
3V
V
DS
=5V
4.5V
6
2.5V
4
6
125°C
3
2
V
GS
=2V
25°C
2
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2.5
3
3.5
V
DS
(Volts)
Fig 1: On-Region Characteristics
V
GS
(Volts)
Figure 2: Transfer Characteristics
150
125
100
75
1.8
1.6
1.4
1.2
1
V
GS
=4.5V
V
GS
=2.5V
V
GS
=10V
V
GS
=4.5V
V
GS
=2.5V
50
25
V
GS
=10V
0
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
I
D
(A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
200
150
100
50
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
I
D
=2A
125°C
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
(Volts)
V
GS
(Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
– 3 –
2012-7
PT3402
30V N-Channel Enhancement Mode MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
500
400
300
200
100
0
5
4
3
2
1
0
V
DS
=15V
I
D
=4A
C
iss
C
oss
C
rss
0
1
2
3
4
5
0
5
10
15
V
DS
(Volts)
20
25
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
T
J(Max)
=150°C
T
A
=25°C
100.0
10.0
1.0
20
T
J(Max)
=150°C
T
A
=25°C
15
10
5
10
µ
s
R
DS(ON)
limited
100
µ
s
1ms
0.1s
10ms
1s
10s
DC
0.1
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V
DS
(Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=T
on
/T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
P
D
0.1
T
on
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
– 4 –
2012-7
