PUOLOP-PT3407
| Part # | PUOLOP-PT3407 |
Download  | PUOLOP-PT3407 |
PT3407
-30V P-Channel Enhancement Mode MOSFET
V
DS
= -30V
R
DS(ON)
, V
@-10V, I
@ -4
.
1A < 80m
Ω
gs
ds
R
DS(ON)
, V
gs
@-4.5V, I
ds
@-3.0A < 110m
Ω
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
SOT-23
G
S
Millimete
Millimeter
RE
F
.
RE
F
.
Min.
Max.
3.00
2.50
1.40
0.50
0.10
Min.
1.80
0.90
0.10
0.35
0.92
Max.
2.00
1.1
0.20
0.70
0.98
A
B
C
D
E
2.80
2.30
1.20
0.30
0
G
H
K
J
L
F
0.45
0.55
M
0
°
10
°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Symbol
V
DS
V
GS
I
D
Limit
Parameter
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
-30
V
A
±
20
-4.1
I
DM
-20
TA = 25
o
C
TA = 75
o
C
1.4
1
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted)
T
J
, T
stg
R
q
JA
-55 to 150
125
o
C
o
C/W
2017-9
– 1 –
PT3407
-30V P-Channel Enhancement Mode MOSFET
(TA = 25oC unless otherwise noted)
ELECTRICAL CHARACTERISTICS
Min.
Symbol
Typ.
Miax.
Unit
Parameter
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
BV
DSS
R
DS(on)
R
DS(on)
V
GS
= 0V, I
D
= -250uA
V
GS
= -10V, I
D
= -4.1A
V
GS
= -4.5
V
,
I
D
= -3A
-30
V
48.0
64.0
80
m
W
110
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Dynamic
V
GS(th)
I
DSS
I
GSS
g
fs
V
DS
=V
GS
, I
D
= -250uA
DS
= -24V, V
GS
= 0V
GS
=
±
20V, V
DS
= 0V
4
A
V
uA
nA
S
–
-3.0
-1
-1.0
1
V
V
±
100
V
DS
= -5V, I
D
= –
5.5
Total Gate Charge
Q
g
Q
gs
Q
gd
t
d(on)
t
r
9.35
3.43
V
DS
= -15V , I
D
=-4.1A
V
GS
= -10V
Gate-Source Charge
Gate-Drain Charge
nC
ns
1.7
Turn-On Delay Time
Turn-On Rise Time
10.8
V
DD
=-15
V
,
R
L=15
W
2.33
I
D
= –
1
A
,
V
GEN
= -1
0
V
Turn-Off Delay Time
Turn-Off Fall Time
22.53
3.87
t
d(off)
t
f
R
G
= 6
W
Input Capacitance
C
iss
C
oss
C
rss
551.57
90.96
60.79
V
DS
= -1
5
V
,
V
GS
= 0V
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
pF
I
S
-2.6
-1.3
A
V
V
SD
I =
A, V
GS
= 0V
2.6
S
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
2017-9
– 2 –
