PUOLOP-PTD4N60
| Part # | PUOLOP-PTD4N60 |
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PTD4N60
N-Channel MOSFET
Features
{
2. Drain
Symbol
■
R
(Max 2.5
Ω
)@V =10V
DS(on)
GS
●
■
Gate Charge (Typical 15nC)
◀
■
Improved dv/dt Capability, High Ruggedness
■
100% Avalanche
T
e
sted
▲
●
●
1. Gate
{
■
Maximum Junction
T
e
mperature Range (150°C)
3. Source
{
TO-252(D-PAK)
2
1
3
Absolute Maximum Ratings
Symbol
Parameter
Value
600
Units
V
DSS
Drain to Source Voltage
V
A
Continuous Drain Current(@T
C
= 25
°C)
2.8
I
D
Continuous Drain Current(@T
C
= 100
°C)
Drain Current Pulsed
1.8
A
A
V
I
DM
(Note 1)
11.2
V
GS
Gate to Source Voltage
±
30
218
E
AS
E
AR
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 3)
mJ
mJ
4.9
dv/dt
4.5
V/ns
W
T
o
tal Power Dissipation(@T
C
= 25 °C)
49
P
D
Derating Factor above 25 °C
0.39
W/°C
°C
T
ST
G
,
T
J
Operating Junction
T
e
mperature & Storage
T
e
mperature
– 55 ~ 150
Maximum Lead
T
e
mperature for soldering purpose,
1/8 from Case for 5 seconds.
T
L
300
°C
Thermal Characteristics
Value
Symbol
Parameter
Units
Min.
Typ.
Max.
2.56
50
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
–
–
–
–
–
–
°C/W
°C/W
°C/W
110
* When mounted on the minimum pad size recommended (PCB Mount)
– 1 –
2012-7-8
PTD4N60
Electrical Characteristics
( T
C
= 25 °C unless otherwise noted )
Symbol
Off Characteristics
Parameter
Test Conditions
Min
Typ
Max
Units
BV
DSS
V
GS
= 0V, I
D
= 250uA
I
D
= 250uA, referenced to 25 °C
Drain-Source Breakdown Voltage
600
–
–
–
–
V
Δ
BV
DSS
/
Breakdown Voltage
T
e
mperature
coefficient
0.6
V/°C
Δ
T
J
V
DS
= 600V, V
GS
= 0V
–
–
–
–
–
–
–
–
10
uA
uA
nA
nA
I
DSS
Drain-Source Leakage Current
V
DS
= 480V, T
C
= 125 °C
100
100
-100
V
V
GS
= 30V,
V
DS
= 0V
GS
= -30V,
V
DS
= 0V
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
I
GSS
On Characteristics
V
GS(th)
V
DS
= V
GS
, I
D
= 250uA
V
GS
=10
V
,
I
D
= 1.4A
Gate Threshold Voltage
2.0
–
–
4.0
2.5
V
Static Drain-Source On-state Resis-
tance
R
DS(ON)
2.0
Ω
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
545
60
8
710
80
pF
C
oss
C
rss
Output Capacitance
V
GS
=0 V, V
DS
=25
V
, f =
1
MHz
Reverse Transfer Capacitance
11
Dynamic Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
–
–
–
–
–
–
10
35
45
40
15
2.8
30
80
100
90
20
–
V
DD
=300V, I
D
=4.0A, R
G
=25
Ω
(Note 4, 5)
ns
Turn-off Delay Time
Fall Time
Q
g
T
o
tal Gate Charge
Gate-Source Charge
V
DS
=480V, V
GS
=10
V
,
I
D
=4.0A
(Note 4, 5)
Q
gs
nC
Q
gd
Gate-Drain Charge(Miller Charge)
–
6.2
–
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
Parameter
Test Conditions
Min.
Typ.
Max.
2.8
Unit.
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Integral Reverse p-n Junction
Diode in the MOSFET
–
–
–
–
–
–
A
I
SM
11.2
1.4
V
SD
I
S
=2.8A, V
GS
=0V
V
t
rr
Reverse Recovery Time
–
–
300
2.2
–
–
ns
uC
I
S
=4.0A, V
GS
=0V, dI
F
/dt=100A/us
Q
rr
Reverse Recovery Charge
※
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 25mH, I
AS
=4.0A, V
DD
= 50V, R
G
= 25
Ω
, Starting T
J
=
25°C
3. I
SD
≤
4.0A, di/dt
≤
200A/us, V
DD
≤
BV
DSS
, Starting
T
J
=
25°C
4. Pulse
T
e
st : Pulse Width
≤
300us, Duty Cycle
≤
2%
5. Essentially independent of operating temperature.
– 2 –
2012-7-8
PTD4N60
Typical Characteristics
V
G
S
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
1
10
Top :
10
1
Botto
m
:
5
.0
V
0
10
150
o
C
10
0
25
o
C
-1
10
-55
o
C
※
N
otes :
1. V
D
S
=
4
0V
2. 250µ s Pulse Test
※
N
otes :
1. 250µ s Pulse Test
2. T
C
=
2
5
℃
-1
10
-1
10
10
0
10
1
2
4
6
8
10
V
G
S
,
G
ate-Source Voltage [V]
V
D
S
,
D
rain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
12
10
8
10
1
V
G
S
= 10V
V
G
S
= 20V
6
10
0
4
150
℃
25
℃
※
N
otes :
1. V
G
S
=
0
V
2
2. 250µ s Pulse Test
※
N
ote : T = 25
℃
J
-1
0
10
0
2
4
6
8
10
12
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
,
D
rain Current [A]
V
S
D
,
S
ource-Drain voltage [V]
Figure 3. On-Resistance Variation
vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1000
500
0
12
10
8
C
iss
=
C
gs
+
C
gd
(C
ds
= shorted)
C
o
ss
=
C
ds
+
C
gd
rss
=
C
gd
V
D
S
= 120V
C
V
D
S
= 300V
V
D
S
= 480V
C
iss
6
C
oss
4
※
N
otes :
1. V
G
S
= 0 V
2. f = 1 MHz
C
rss
2
※
Note : I
D
= 4.0 A
0
-1
10
10
0
10
1
0
4
8
12
16
20
Q
G
, Total Gate Charge [nC]
V
D
S
,
D
rain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
– 3 –
2012-7-8
PTD4N60
Typical Characteristics
(Continued)
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※
N
otes :
1. V
G
S
= 0 V
2. I
D
=
2
50 µ A
※
N
otes :
1. V
= 10 V
2. I
D
G
=
S
2
.0 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T,
J
unction Temperature [
o
C
]
T,
J
unction Temperature [
o
C
]
J
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 11. Transient Thermal Response Curve
– 4 –
2012-7-8
PTD4N60
Gate Charge Test Circuit & Waveform
V
GS
Same Type
as DUT
50K
Ω
Q
g
12V
200nF
10V
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
3
m
A
Cha
r
ge
Resistive Switching Test Circuit & Waveforms
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
V
1
0%
GS
DUT
10V
t
d
(
o
n
)
t
r
t
d
(
o
ff)
t
f
t
o
n
t
o
f
f
Unclamped Inductive Switching Test Circuit & Waveforms
BV
DSS
—- ——————–
L
1
E
E =
L
I
2
2
AS
AS
V
DS
BV
–
V
DSS DD
BV
DSS
I
I
D
AS
R
G
V
DD
I
D
(
t)
V
DD
V
(
t)
DS
DUT
10V
t
p
t
p
T
i
m
e
– 5 –
2012-7-8
PTD4N60
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
D
U
T
V
D
S
_
I
S
D
L
D
r
i v
e
r
R
G
S
a
m
a
e
T
U
y
/
p
T
e
V
s
D
D
D
V
G
S
•
•
d
I
v
d
t
c
o
t
n
t
r
l
o
e
l
l
e
d
b
y
R
s
G
c
o
n
r
o
l
d
b
y
p
u
l
e
p
e
r
i
o
d
S
D
G
–
a
–
t
e
P
–
u
l
s
e
–
W
i
d
–
t
h
–
V
r
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
i
–
–
D
=
G
S
G
a
t
e
P
u
l
s
e
P
e
r
o
d
1
0
V
(
D
i
v
e
r
)
I
,
B
o
d
y
D
i
o
d
e
F
o
r
w
a
r
d
C
u
r
r
e
n
t
F
M
I
S
D
d
i
/
d
r
t
(
D
U
T
S
)
I
R
M
B
o
d
y
D
i
o
d
e
c
R
e
v
r
e
r
s
e
C
u
r
e
n
t
V
D
(
D
U
T
)
B
o
d
y
S
D
i
o
d
e
R
e
o
v
e
y
d
v
/
d
t
V
V
D
D
D
B
o
d
y
D
i
o
d
e
F
o
r
w
a
r
d
V
o
l
t
a
e
D
r
o
– 6 –
2012-7-8
