PUOLOP-PTD50N06

PTD50N06  

60V/50A N-Channel Advanced Power MOSFET  

Features  

General Features  



Low On-Resistance  

V

DS

=60

V

,

I

D

=50A  





Fast Switching  

R

DS(ON)

<20m

Ω

@ V

GS

=10V  



100% Avalanche Tested  



Repetitive Avalanche Allowed up to Tj max  



Lead-Free, RoHS Compliant  

D

Description  

PTD50N06 designed by the trench process  

techniques to achieve extremely low on-resistance.  

Additional features of this design can operate at  

high junction temperature, fast switching speed and  

improved repetitive avalanche rating.These  

features combine to make this design an extremely  

efficient and

 

reliable device for use in Motor  

applications and a wide variety of other applications.  

S

G

TO-252-2L  

Absolute Maximum Ratings  

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and  

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to  

absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are  

measured under board mounted and still air conditions. Ambient temperature (Ta) is 25°C, unless otherwise specified.  

Parameter  

Symbol  

V

DS  

Limit  

60  

Unit  

V

Drain-Source Voltage  

Gate-Source Voltage  

Drain Current-Continuous  

±20  

V

V

GS  

50  

35.4  

A

A

I

D  

Drain Current-Continuous(T

C

=100

℃

)  

Pulsed Drain Current  

I

D

(100

℃

)  

I

DM  

200  

A

Maximum Power Dissipation  

85  

W

P

D  

Derating factor  

0.57  

W/

℃  

mJ  

℃

Single pulse avalanche energy

(Note 5)  

Operating Junction and Storage Temperature Range  

Thermal Resistance,Junction-to-Case

(Note 2)  

E

AS  

T

J

,T

STG  

R

θ

JC  

300  

-55

T

o

1

75  

1.8  

℃

/W  

– 1-  

2015-3-26  

PTD50N06  

60V/50A N-Channel Advanced Power MOSFET  

Electrical Characteristics (T

C

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min Typ  

Max  

Unit  

Off Characteristics  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

On Characteristics

(Note 3)  

Gate Threshold Voltage  

Drain-Source On-State Resistance  

Forward Transconductance  

Dynamic Characteristics

(Note4)  

Input Capacitance  

BV

DSS  

I

DSS  

V

GS

=0V I

D

=250

μ

A  

V

DS

=60V,V

GS

=0V  

V

GS

=±20V,V

DS

=0V  

60  

–

–

–

–

–

1

V

μ

A  

nA  

I

GSS  

–

±100  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

=V

GS

,I

D

=250

μ

A  

V

GS

=10V, I

D

=20A  

V

DS

=5V,I

D

=20A  

1.4  

–

1.9  

14  

–

2.5  

20  

–

V

m

Ω  

S

18  

C

lss  

C

oss  

C

rss  

–

–

–

2050  

158  

–

–

–

PF  

PF  

PF  

V

DS

=30V,V

GS

=0V,  

F=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics

(Note 4)  

Turn-on Delay Time  

120  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

7.4  

5.1  

28.2  

5.5  

50  

–

–

–

–

nS  

nS  

nS  

nS  

nC  

nC  

nC  

Turn-on Rise Time  

V

DD

=30V, R

L

=6.7

Ω  

V

GS

=10V,R

G

=3

Ω  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Q

g  

Q

gs  

Q

gd  

V

DS

=30V,I

D

=20A,  

Gate-Source Charge  

6

V

GS

=10V  

Gate-Drain Charge  

15  

Drain-Source Diode Characteristics  

Diode Forward Voltage

(Note 3)  

Diode Forward Current

(Note 2)  

Reverse Recovery Time  

V

SD  

I

S  

V

GS

=0V,I

S

=20A  

–

–

–

–

1.2  

50  

–

V

A

–

t

rr  

TJ = 25°C, IF =20A  

di/dt = 100A/

μ

s

(Note3)  

28  

40  

nS  

nC  

Reverse Recovery Charge  

Forward Turn-On Time  

Qrr  

t

on  

–

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  

– 2-  

2015-3-26  

PTD50N06  

60V/50A N-Channel Advanced Power MOSFET  

Typical Electrical and Thermal Characteristics (Curves)  

Vds Drain-Source Voltage (V)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 1 Output Characteristics  

Figure 4 Rdson-Junction Temperature  

Vgs Gate-Source Voltage (V)  

Qg Gate Charge (nC)  

Figure 2 Transfer Characteristics  

Figure 5 Gate Charge  

I

D

– Drain Current (A)  

Vsd Source-Drain Voltage (V)  

Figure 3 Rdson-

Drain Current  

Figure 6 Source- Drain Diode Forward  

– 3-  

2015-3-26  

PTD50N06  

60V/50A N-Channel Advanced Power MOSFET  

Vds Drain-Source Voltage (V)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 7 Capacitance vs Vds  

Figure 9 BV

DSS

vs Junction Temperature  

Vds Drain-Source Voltage (V)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 8 Safe Operation Area  

Figure 10 V

GS(th)

vs Junction Temperature  

Square Wave Pluse Duration (sec)  

Figure 11 Normalized Maximum Transient Thermal Impedance  

– 4 –  

2015-3-26